Sharaxaada
Wafer CarrierslehDahaarka Silicon Carbide (SiC)laga soo bilaabo semicera waxaa si khibrad leh loogu talagalay korriinka epitaxial-waxqabadka sare, hubinta natiijooyinka ugu wanaagsanSida EpitaxyiyoSiC Epitaxycodsiyada. Sidayaal saxan-engineered Semicera waxa loo dhisay in ay u adkeystaan xaaladaha ba'an, iyaga oo ka dhigaya qaybo lama huraan u ah nidaamyada Susceptor MOCVD ee warshadaha u baahan saxnaan sare iyo adkeysi.
Qaadayaashan wafer-ka ah waa kuwo badan, oo ku taageeraya hababka muhiimka ah qalabka sidaPSS Etching Carrier, ICP Etching CarrieriyoQaade RTP. Dahaarkooda adag ee SiC waxay wanaajisaa waxqabadka codsiyada sidaLED EpitaxialSusceptor iyo Monocrystalline Silicon, hubinta natiijooyin joogto ah xitaa jawiga baahida.
Waxaa laga heli karaa qaabab badan, sida Barrel Susceptor iyo Pancake Susceptor, sidayaashani waxay door muhiim ah ka ciyaaraan wax soo saarka sawir-qaadista iyo semiconductor, iyagoo taageeraya wax soo saarka Qaybaha Sawir-voltaic iyo fududaynta GaN ee hababka SiC Epitaxy. Naqshaddooda sare, sidayaashani waa hantida ugu muhiimsan ee soosaarayaasha ujeedadoodu tahay wax soo saarka waxtarka sare leh.
Tilmaamaha ugu muhiimsan
1. Nadiifinta sare ee SiC garaafyada dahaarka leh
2. Iska caabbinta kulaylka sare iyo isku midnimada kulaylka
3. FiicanSiC crystal dahaarka lehdusha siman
4. Adkeysiga sare ee nadiifinta kiimikada
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC:
SiC-CVD | ||
Cufnaanta | (g/cc) | 3.21 |
Xoog dabacsanaan | (Mpa) | 470 |
Balaadhinta kulaylka | (10-6/K) | 4 |
Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
Baakad iyo rarid
Awooda wax bixinta:
10000 Qaybaha/Qeybaha bishii
Baakadaha & Bixinta:
Xirxirida:Standard & Xidhid Xoog Leh
Shandad badan + Sanduuqa + Kartoon + Sariiraha
Dekedda:
Ningbo/Shenzhen/Shanghai
Waqtiga Hogaaminta:
Tirada (Qeybaha) | 1-1000 | >1000 |
Est. Waqti (maalmo) | 30 | In laga wadahadlo |