Daboolka CVD SiC
Silikon carbide (SiC) epitaxy
Saxanka epitaxial, kaas oo haya substrate-ka SiC si uu u kobciyo jeexjeexa SiC epitaxial, oo la dhex dhigo qolka falcelinta oo si toos ah ula xidhiidha waferka.
Qaybta sare ee dayaxa-moonku waa sidayaal qalabyo kale oo ka mid ah qolka falcelinta ee qalabka Sic epitaxy, halka qaybta hoose ee nus-moon ay ku xiran tahay tuubada quartz, oo soo bandhigaysa gaaska si loo kaxeeyo saldhigga susceptor si uu u wareego.waa kuwo heerkul-ku-koontarool ah oo lagu rakibay qolka falcelinta iyada oo aan si toos ah loola xiriirin waferka.
Sida epitaxy
Saxanka, kaas oo haya substrate-ka Si loogu beero jeexjeexa Si epitaxial, oo la dhex dhigo qolka falcelinta oo si toos ah ula xidhiidha maraqa.
Giraanta kuleylka hore waxay ku taal giraanta dibadda ee Si epitaxial substrate tray waxaana loo isticmaalaa hagaajinta iyo kuleylinta.Waxa la dhigayaa qolka falcelinta oo si toos ah ulama xidhiidhin waferka.
Susceptor epitaxial, kaas oo sita substrate-ka Si loogu beero jeex Epitaxial Si, oo la dhex dhigo qolka falcelinta oo si toos ah ula xidhiidha waferka.
Foosto Epitaxial waa qaybaha muhiimka ah ee loo isticmaalo hababka wax soo saarka semiconductor ee kala duwan, guud ahaan loo isticmaalo qalabka MOCVD, oo leh xasilooni kulayl aad u fiican, caabbinta kiimikada iyo xirashada caabbinta, aad ugu habboon isticmaalka hababka heerkulka sare.Waxay la xiriirtaa waferrada.
| 重结晶碳化硅物理特性 Astaamaha jireed ee Silicon Carbide dib loo soo celiyay | |
| 性质 / Hanti | 典型数值 / Qiimaha Caadiga ah |
| 使用温度 / Heerkulka shaqada (°C) | 1600°C (oo oksijiin leh), 1700°C (hoos u dhaca deegaanka) |
| SiC 含量 / SiC content | > 99.96% |
| 自由 Si 含量 / Si bilaash ah | <0.1% |
| 体积密度 / cufnaanta weyn | 2.60-2.70 g/cm3 |
| 气孔率 / Borosity muuqda | <16% |
| 抗压强度 / Awood cadaadis | > 600 MPa |
| 常温抗弯强度 / Xoog laabashada qabow | 80-90 MPa (20°C) |
| 高温抗弯强度 Xoog foorarsi kulul | 90-100 MPa (1400°C) |
| 热膨胀系数 / Kordhinta kulaylka @1500°C | 4.70 10-6/°C |
| 导热系数 / kulaylka hawada @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modules | 240 GPA |
| 抗热震性 / U adkaysiga shoogga kulaylka | Aad u wanaagsan |
| 烧结碳化硅物理特性 Astaamaha jireed ee Sintered Silicon Carbide | |
| 性质 / Hanti | 典型数值 / Qiimaha Caadiga ah |
| 化学成分 / Halabuurka Kiimikada | SiC>95%, Si<5% |
| 体积密度 / Cufnaanta Bulk | >3.07 g/cm³ |
| 显气孔率 / Borosity muuqda | <0.1% |
| 常温抗弯强度 / Qaabka dillaacsan ee 20℃ | 270 MPa |
| 高温抗弯强度 / Qaabka dillaacay 1200℃ | 290 MPa |
| 硬度 / Adag markay tahay 20 ℃ | 2400 Kg/mm² |
| 断裂韧性 / adkaanta jabka ee 20% | 3.3 MPa · m1/2 |
| 导热系数 / Heerarka kulaylka at 1200 ℃ | 45 w/m .K |
| 热膨胀系数 / Kordhinta kulaylka at 20-1200℃ | 4.5 1 ×10 -6/℃ |
| 最高工作温度 / Heerkulka ugu badan ee shaqada | 1400 ℃ |
| 热震稳定性 | Wacan |
| CVD SiC 薄膜基本物理性能 Astaamaha asaasiga ah ee filimada CVD SiC | |
| 性质 / Hanti | 典型数值 / Qiimaha Caadiga ah |
| 晶体结构 / Crystal Structure | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| 密度 / Cufnaanta | 3.21 g/cm³ |
| 硬度 / Adag 2500 | 维氏硬度（500g oo xamuul ah |
| 晶粒大小 / Hadhuudhka SiZe | 2 ~ 10μm |
| 纯度 / Nadiifadda Kiimikada | 99.99995% |
| 热容 / Awoodda kulaylka | 640 · kg-1·K-1 |
| 升华温度 / Heerkulka Sublimation | 2700 ℃ |
| 抗弯强度 / Xoog Jilicsan | 415 MPa RT 4-dhibic |
| 杨氏模量 / Da'yarta Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| 导热系数 / Habdhaqanka kulaylka | 300W·m-1·K-1 |
| 热膨胀系数 / Kordhinta kulaylka(CTE) | 4.5×10-6 K -1 |
Dahaarka Kaarboon Pyrolytic
Tilmaamaha ugu muhiimsan
Dusha sare waa cufan oo aan lahayn daloolno.
Nadiifin sare, wadarta guud ee wasakhda <20ppm, hawo-mareen wanaagsan.
Iska caabin heerkul sarreeya, xooggu wuxuu kordhiyaa heerkulka isticmaalka oo sii kordhaya, isagoo gaaraya qiimaha ugu sarreeya ee 2750 ℃, hoos u dhigista 3600 ℃.
modules laastikada hoose, conductivity kaamerada sare, coefficient fidinta kulaylka hoose, iyo caabbinta shoogga kulaylka aad u fiican.
Degganaanshiyo kiimikaad oo wanaagsan, adkaysi u leh aashitada, alkali, cusbada, iyo reagents organic, oo aan wax saamayn ah ku yeelan biraha dhalaalay, dharbaaxada, iyo warbaahinta kale ee daxalaysa.Si aad ah uma oksijiyeen jawiga ka hooseeya 400 C, heerka oksaydhiskuna aad buu u kordho 800 ℃.
Adigoon wax gaas ah ku sii deyn heerkul sare, waxay ilaalin kartaa faakuumka 10-7mmHg qiyaastii 1800°C.
Codsiga alaabta
Ku dhalaalidda uumiga ee warshadaha semiconductor.
Albaabka tuubada elegtarooniga ah ee awooda sare leh.
caday oo la xidhiidha maamulaha danabka.
graphite monochromator ee raajada iyo neutron.
Qaabab kala duwan oo ah substrates graphite iyo daahan tuubada nuugista atomiga.
Saamaynta dahaarka kaarboonka ee pyrolytic ee hoos imanaya mikroskoob 500X ah, oo leh dusha aan qummanayn oo xidhan.
Daboolka CVD Tantalum Carbide
Dahaarka TaC waa jiilka cusub ee u adkaysta heerkulka sare, oo leh xasillooni heerkul sare oo ka wanaagsan SiC.Sida daahan daxalka u adkaysta, daahan anti-oxidation iyo daahan xidho u adkaysta, waxaa loo isticmaali karaa in deegaanka kor ku xusan 2000C, si ballaaran loo isticmaalo aerospace ultra-sare heerkulka sare qaybaha dhamaadka kulul, jiilka saddexaad semiconductor beeraha koritaanka crystal hal.
| 碳化钽涂层物理特性物理特性 Tilmaamaha jireed ee daahan TaC | |
| 密度/ Cufnaanta | 14.3 (g/cm3) |
| 比辐射率 /Waxsanaan gaar ah | 0.3 |
| 热膨胀系数/ Isku xidhka ballaadhinta kulaylka | 6.3 10/K |
| 努氏硬度 / Adag (HK) | 2000 HK |
| 电阻/ iska caabin | 1x10-5 Ohm*cm |
| 热稳定性 /Xasilloonida kulaylka | <2500℃ |
| 石墨尺寸变化/ cabbirka garaafiga ayaa is beddela | -10 ~ -20um |
| 涂层厚度/ Dhumucda dahaarka | ≥220um qiimaha caadiga ah (35um± 10um) |
Silicon Carbide adag (CVD SiC)
Qaybaha CVD SILICON CARBIDE ee adag waxaa loo aqoonsan yahay inay yihiin doorashada koowaad ee RTP/EPI giraanta iyo saldhigyada iyo qaybaha godka balasmaha ee ku shaqeeya nidaamka sare ee loo baahan yahay heerkulka hawlgalka (> 1500 ° C), shuruudaha nadiifinta ayaa si gaar ah u sarreeya (> 99.9995%) iyo waxqabadka ayaa si gaar ah u wanaagsan marka kiimikooyinka caabbinta tol ay si gaar ah u sarreeyaan.Qalabkani kuma jiraan wejiyada labaad ee cidhifka hadhuudhka, sidaa awgeed qaybaha ay ka kooban yihiin waxay soo saaraan qaybo ka yar alaabta kale.Intaa waxaa dheer, qaybahan waxaa lagu nadiifin karaa iyadoo la isticmaalayo HF/HCI kulul oo leh hoos u dhac yar, taasoo keeneysa qaybo yar iyo nolol adeeg oo dheer.
