Filimka Silicon by Semicera waa wax tayo sare leh, qalab sax ah oo loo habeeyay si loo buuxiyo shuruudaha adag ee warshadaha semiconductor. Waxaa laga soo saaray silikoon saafi ah, xalkan khafiifka ah wuxuu bixiyaa lebis heer sare ah, nadiifnimo sare, iyo sifooyin koronto iyo kulayl gaar ah. Waxay ku habboon tahay in loo isticmaalo codsiyada semiconductor ee kala duwan, oo ay ku jiraan wax soo saarka Si Wafer, Substrate SiC, SOI Wafer, SiN Substrate, iyo Epi-Wafer. Semicera's Silicon Film wuxuu xaqiijiyaa waxqabad la isku halayn karo oo joogto ah, taasoo ka dhigaysa shay lagama maarmaan u ah microelectronics horumarsan.
Tayada Sare iyo Waxqabadka Samaynta Semiconductor
Semicera's Silicon Film waxaa lagu yaqaanaa awood farsamo oo heer sare ah, xasilloonida kulaylka sare, iyo heerka cilladaha hooseeya, kuwaas oo dhammaantood muhiim u ah samaynta semiconductors waxqabadka sare leh. Haddii loo isticmaalo soo saarista aaladaha Gallium Oxide (Ga2O3), AlN Wafer, ama Epi-Wafers, filimku wuxuu bixiyaa aasaas adag oo loogu talagalay dhejinta filimada khafiifka ah iyo koritaanka epitaxial. La jaanqaadkeeda substrate-yada kale ee semiconductor sida SiC Substrate iyo SOI Wafers waxay hubisaa is dhex galka aan kala go'a lahayn ee hababka wax soo saarka ee jira, iyadoo gacan ka geysaneysa ilaalinta wax-soo-saarka sare iyo tayada badeecada joogtada ah.
Codsiyada Warshadaha Semiconductor
Warshadaha semiconductor-ka, Semicera's Silicon Film waxaa loo adeegsadaa codsiyo badan oo kala duwan, laga soo bilaabo soo saarista Si Wafer iyo SOI Wafer ilaa isticmaalyo khaas ah sida SiN Substrate iyo Epi-Wafer abuurista. Nadiifinta sare iyo saxda ah ee filimkan ayaa ka dhigaya mid lagama maarmaan u ah soo saarista qaybaha horumarsan ee loo isticmaalo wax kasta oo ka yimaada microprocessors iyo wareegyada isku dhafan ee qalabka optoelectronic.
Filimka Silicon wuxuu ka ciyaaraa door muhiim ah hababka semiconductor sida korriinka epitaxial, xidhitaanka wafer, iyo dhigista filim khafiif ah. Sifooyinkeeda lagu kalsoonaan karo ayaa si gaar ah qiimo ugu leh warshadaha u baahan bay'ad si heer sare ah loo kontoroolo, sida qolalka nadiifka ah ee maraqa semiconductor. Intaa waxaa dheer, Filimka Silicon waxaa lagu dhex dari karaa nidaamyada cajaladaha si loo maareeyo wafer wax ku ool ah iyo gaadiidka inta lagu jiro wax soo saarka.
Isku halaynta iyo Joogteynta Muddada-dheer
Mid ka mid ah faa'iidooyinka ugu muhiimsan ee isticmaalka Semicera's Silicon Film waa isku halaynta muddada dheer. Iyada oo adkeysigeeda wanaagsan iyo tayada joogtada ah, filimkani wuxuu bixiyaa xal lagu kalsoonaan karo oo loogu talagalay jawiga wax soo saarka ee sarreeya. Haddii loo isticmaalo aaladaha semiconductor-ka sare ee saxda ah ama codsiyada elektiroonigga ah ee horumarsan, Semicera's Silicon Film waxay hubisaa in wax-soo-saarayaashu ay gaari karaan waxqabad sare iyo isku hallayn dhammaan badeecado kala duwan.
Waa maxay sababta loo doorto Filimka Silicon ee Semicera?
Filimka Silicon ee Semicera waa shay lagama maarmaan u ah codsiyada cirifka leh ee warshadaha semiconductor. Sifooyinkeeda wax qabad ee sarreeya, oo ay ku jiraan xasilloonida kulaylka aadka u wanaagsan, nadiifnimada sare, iyo xoogga farsamada, ayaa ka dhigaya doorashada ugu habboon ee soosaarayaasha raadinaya inay gaaraan heerarka ugu sarreeya ee wax soo saarka semiconductor. Laga soo bilaabo Si Wafer iyo SiC Substrate ilaa soo saarista aaladaha Gallium Oxide Ga2O3, filimkani wuxuu bixiyaa tayada iyo waxqabadka aan isbarbar dhigin.
Iyada oo leh Semicera's Silicon Film, waxaad ku kalsoonaan kartaa badeecad buuxisa baahiyaha wax soo saarka semiconductor-ka casriga ah, taasoo siinaya aasaas la isku halayn karo oo loogu talagalay jiilka soo socda ee elektiroonigga ah.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |