Substrates Silicon Carbide | Wafers SiC

Substrates Silicon Carbide|SiC Wafers Sawirka Sifaysan

Sharaxaad Gaaban:

WeiTai Energy Technology Co., Ltd. waa alaab-qeybiye hormuud ah oo ku takhasusay waferka iyo isticmaalka semiconductor sare.Waxaan u heellannahay inaan bixinno alaab tayo sare leh, la isku halayn karo, iyo halabuur leh wax-soo-saarka semiconductor, warshadaha sawir-qaadista iyo qaybaha kale ee la xiriira.

Khadkayaga alaabada waxaa ka mid ah alaabada graphite ee dahaarka leh ee SiC/TaC iyo alaabada dhoobada, oo ka kooban agabyo kala duwan sida silikoon carbide, silicon nitride, iyo aluminium oxide iyo iwm.

Waqtigan xaadirka ah, waxaan nahay soo saaraha kaliya ee bixiya nadiifnimada 99.9999% daahan SiC iyo 99.9% carbide silicon recrystalized.Dhererka dahaarka max SiC waxaan samayn karnaa 2640mm.

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Silicon carbide (SiC) walxo crystal ah oo kali ah ayaa leh ballac ballaaran oo faaruq ah (~ Si 3 jeer), korantada kuleylka sare (~ Si 3.3 jeer ama GaAs 10 jeer), heerka guuritaanka korantada elektaroonigga sare (~ Si 2.5 jeer), koronto jaban oo sarreeya garoonka (~ Si 10 jeer ama GaAs 5 jeer) iyo astaamo kale oo muuqda.

Aaladaha SiC waxay leeyihiin faa'iidooyin aan la bedeli karin oo ku saabsan heerkulka sare, cadaadiska sare, soo noqnoqda sare, qalabka elektarooniga ah ee awoodda sare leh iyo codsiyada deegaanka ee aadka u daran sida hawada, militariga, tamarta nukliyeerka, iwm. Codsiyada, oo si tartiib tartiib ah u noqdaan kuwa ugu muhiimsan ee semiconductors.

4H-SiC Tilmaamaha substrate-ka Silicon carbide

Shayga项目	Tilmaamaha参数
Noocyo badan 晶型	4H -SiC	6H- SiC
Dhexroorka 晶圆直径	2 inji \|3 inch \|4 inji \|6 inji	2 inji \|3 inch \|4 inji \|6 inji
Dhumucda 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Hab-dhaqanka 导电类型	N - nooca / Semi-dahaarka N型导电片/ 半绝缘片	N - nooca / Semi-dahaarka N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrojiin) V (Vandium)	N2 (Nitrojiin) V (Vandium)
Hanuuninta 晶向	Xagasha <0001> Xagasha ka baxsan <0001> off 4°	Xagasha <0001> Xagasha ka baxsan <0001> off 4°
iska caabin 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Cufnaanta Dheecaan yar (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Qaanso / Warp 翘曲度	≤25 μm	≤25 μm
Dusha sare 表面处理	DSP/SSP	DSP/SSP
Darajo 产品等级	Heerka wax soo saarka / cilmi baarista	Heerka wax soo saarka / cilmi baarista
Isku dhafka Crystal Stacking 堆积方式	ABCB	ABCABC
Halbeegyada Lattice 晶格参数	a=3.076A, c=10.053A	a=3.073A, c=15.117A
Tusaale/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Tusmada Milicsiga 折射率	n0 = 2.719 ne = 2.777	n0 = 2.707, ne = 2.755

6H-SiC Silicon Carbide sifooyinka substrate-ka

Shayga项目	Tilmaamaha参数
Noocyo badan 晶型	6H-SiC
Dhexroorka 晶圆直径	4 inji \|6 inji
Dhumucda 厚度	350μm ~ 450μm
Hab-dhaqanka 导电类型	N - nooca / Semi-dahaarka N型导电片/ 半绝缘片
Dopant 掺杂剂	N2( Nitrojiin) V ( Vanadium )
Hanuuninta 晶向	<0001> off 4°± 0.5°
iska caabin 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Nooca)
Cufnaanta Dheecaan yar (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Qaanso / Warp 翘曲度	≤25 μm
Dusha sare 表面处理	Si Wajiga: CMP, Epi-Ready C Wajiga: Polish indhaha
Darajo 产品等级	Darajada cilmi baarista