Sharaxaada
TheSilicon Carbide (SiC) Wafer SusceptorsMOCVD ee semicera waxaa loogu talagalay hababka sare ee epitaxial, oo bixiya waxqabad heer sare ah labadabaSida EpitaxyiyoSiC Epitaxycodsiyada. Habka hal-abuurka leh ee Semicera wuxuu hubinayaa in kuwani ay yihiin kuwo waara oo hufan, siinta xasilloonida iyo saxnaanta hawlgallada wax soo saarka ee muhiimka ah.
Injineerka si uu u taageero baahiyaha qalafsan eeSusceptor MOCVDNidaamyada, alaabooyinkani waa kuwo isku dhafan, oo ku habboon sidayaal sida PSS Etching Carrier, ICP Etching Carrier, iyo Qaadaha RTP. Debacsanaantooda ayaa ka dhigaysa inay ku habboon yihiin warshadaha tignoolajiyada sare, oo ay ku jiraan kuwa la shaqeeyaLED EpitaxialSusceptor iyo Monocrystalline Silicon.
Habaynyo badan, oo ay ku jiraan Susceptor Barrel iyo Pancake Susceptor, shakiyeyaasha wafer-ka ayaa sidoo kale lagama maarmaan u ah qaybta sawir-qaadista, taageeraya wax soo saarka Qaybaha Photovoltaic. Soosaarayaasha semiconductor, awoodda lagu maareeyo GaN ee hababka SiC Epitaxy ayaa ka dhigaysa kuwan shakiyaysan qiimo sare oo loogu talagalay hubinta wax soo saarka tayada sare leh ee codsiyada kala duwan.
Tilmaamaha ugu muhiimsan
1. Nadiifinta sare ee SiC garaafyada dahaarka leh
2. Iska caabbinta kulaylka sare iyo isku midnimada kulaylka
3. FiicanSiC crystal dahaarka lehdusha siman
4. Adkeysiga sare ee nadiifinta kiimikada
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC:
SiC-CVD | ||
Cufnaanta | (g/cc) | 3.21 |
Xoog dabacsanaan | (Mpa) | 470 |
Balaadhinta kulaylka | (10-6/K) | 4 |
Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
Baakad iyo rarid
Awooda wax bixinta:
10000 Qaybaha/Qeybaha bishii
Baakadaha & Bixinta:
Xirxirida:Standard & Xidhid Xoog Leh
Shandad badan + Sanduuqa + Kartoon + Sariiraha
Dekedda:
Ningbo/Shenzhen/Shanghai
Waqtiga Hogaaminta:
Tirada (Qeybaha) | 1-1000 | >1000 |
Est. Waqti (maalmo) | 30 | In laga wadahadlo |