SiC-dahaarka leh Epitaxial Reactor Foosto

Sharaxaad Gaaban:

Semicera waxa ay soo bandhigtaa kala duwanaansho dhamaystiran oo ah suujiyeyaal iyo qaybo graphite ah oo loogu talagalay reactors epitaxy kala duwan.

Iyada oo loo marayo iskaashi istaraatiijiyadeed oo lala yeesho OEM-yada hormuudka u ah warshadaha, khibradda agabka ballaaran, iyo awoodaha wax soo saarka ee horumarsan, Semicera waxay soo bandhigtaa naqshado loo habeeyey si ay u buuxiso shuruudaha gaarka ah ee codsigaaga.Ballanqaadkayaga xagga sareynta waxay hubinaysaa inaad hesho xalalka ugu habboon baahiyahaaga fal-celinta epitaxy.

 

Faahfaahinta Alaabta

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Sharaxaada

Shirkaddayadu waxay bixisaaDahaarka SiCadeegyada habka dusha sare ee graphite, ceramics iyo qalabka kale ee habka CVD, si gaasas gaar ah oo ay ku jiraan kaarboon iyo Silicon falcelin karaan heerkulka sare si ay u helaan-nadiifinta sare Sic molecules, kaas oo lagu shubo karaa on dusha alaabta dahaarka ah si ay u sameeyaan aLakabka ilaalinta SiCfoosto epitaxy nooca hy pnotic.

 

sida (1)

sida (2)

Tilmaamaha ugu muhiimsan

1. Iska caabbinta oksaydhka heerkulka sare:
caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku gaadho 1600 C.
2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalad koloriineed heerkul sare ah.
3. Iska caabbinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.
4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

Guryaha SiC-CVD
Dhismaha Crystal FCC β wejiga
Cufnaanta g/cm³ 3.21
Adag Vickers adag 2500
Cabirka Hadhuudhka μm 2 ~ 10
Nadiifnimada Kiimikada % 99.99995
Awoodda kulaylka J·k-1 ·K-1 640
Heerkulka Sublimation 2700
Xoogga Felexural MPa (RT 4-dhibcood) 415
Dhallinta Modul Gpa (4pt laab, 1300 ℃) 430
Balaadhinta kulaylka (CTE) 10-6K-1 4.5
Dhaqdhaqaaqa kulaylka (W/mK) 300
Goobta shaqada ee Semicera
Goobta shaqada ee Semicera 2
Mashiinka qalabka
Habaynta CNN, nadiifinta kiimikada, daahan CVD
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