Sharaxaada Alaabta
4h-n 4inch 6inch dia100mm sic iniin wafer 1mm dhumucdiisuna waxay tahay korriinka ingot
Cabbirka la hagaajiyay / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / daahir sare 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS fasalka 4H-N 1.5mm SIC Wafers ee crystal abuurka
Ku saabsan Silicon Carbide (SiC) Crystal
Silicon carbide (SiC), oo sidoo kale loo yaqaano carborundum, waa semiconductor ka kooban silikoon iyo kaarboon leh qaacidada kiimikaad ee SiC. SiC waxaa loo isticmaalaa aaladaha elektiroonigga ah ee semiconductor ee ku shaqeeya heerkul sare ama koronto sare, ama labadaba SiC sidoo kale waa mid ka mid ah qaybaha LED-ka ee muhiimka ah, waa substrate caan ah oo koraya aaladaha GaN, waxayna sidoo kale u adeegtaa sida faafinta kulaylka sare- LEDs koronto.
Sharaxaada
| Hanti | 4H-SiC, Hal Crystal ah | 6H-SiC, Hal Crystal ah |
| Halbeegyada Lattice | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Isku-daba-joogista | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Cufnaanta | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Isbahaysiga Balaadhinta | 4-5×10-6/K | 4-5×10-6/K |
| Tusmada dib-u-celinta @750nm | maya = 2.61 | maya = 2.60 |
| Dielectric Constant | c ~ 9.66 | c ~ 9.66 |
| Habdhaqanka kulaylka (N-nooca, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Habdhaqanka Kulaylka (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gaab | 3.23 eV | 3.02 eV |
| Goobta Korontada oo Go'day | 3-5×106V/cm | 3-5×106V/cm |
| Xawaaraha Qulqulka Saturation | 2.0×105m/s | 2.0×105m/s |
