SiC Dahaarka Sawirka Saldhigga ee MOCVD

Susceptors-ka Saldhigga Sawirka ee SiC-da DahaaranMOCVD oo ka socota semicera waxaa loo habeeyay si ay u bixiyaan waxqabad aan caadi ahayn oo ku saabsan hababka koritaanka epitaxial. Dahaarka silikoon carbide ee tayada sare leh ee saldhigga garaafyada waxay hubisaa xasilloonida, adkeysiga, iyo kuleylka ugu fiican inta lagu jiro hawlgallada MOCVD Adigoo isticmaalaya tignoolajiyada susceptor-ka hal-abuurka leh ee semicera, waxaad ku gaadhi kartaa saxnaanta iyo hufnaantaSida EpitaxyiyoSiC Epitaxycodsiyada.

KuwaasSusceptors MOCVDwaxaa loogu talagalay in lagu taageero qaybo badan oo ah semiconductor muhiim ah, sidaPSS Etching Carrier, ICP Etching CarrieriyoQaade RTP, taas oo ka dhigaysa inay noqdaan kuwo ku habboon hawlaha kala duwan ee xoqidda iyo epitaxial. Ballanqaadka Semicera ee heerarka sare waxay hubisaa in dhibbanayaashu ay buuxiyaan baahida adag ee wax soo saarka semiconductor casriga ah.

Ku habboon in lagu isticmaaloLED EpitaxialSusceptor, Susceptor Barrel, iyo Monocrystalline Silicon hababka, tuhmanayaashan waxaa loo habayn karaa cabbirro kala duwan oo wafer ah, oo ay ku jiraan qaabaynta Susceptor Pancake. Waxay sidoo kale aad waxtar ugu leeyihiin maaraynta Qaybaha Photovoltaic, iyaga oo ka dhigaya qayb muhiim ah horumarinta unugyada cadceedda oo hufan.

Intaa waxaa dheer, Susceptors SiC Coated Graphite Base Susceptors ee MOCVD waxaa loo habeeyay GaN ee SiC Epitaxy, iyadoo siinaya ku habboonaansho sare oo leh agabka semiconductor sare. Haddii aad diirada saarto hagaajinta wax-soo-saarka ama kor u qaadida tayada kobaca epitaxial, dabaylaha semicera's waxay bixiyaan kalsoonida iyo waxqabadka looga baahan yahay guusha warshadaha tignoolajiyada sare.