Sharaxaada Alaabta
Shirkadeena waxay bixisaa adeegyada habka daahan SiC ee habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan nadiifnimada sare ee SiC molecules, molecules deposited on the dusha alaabta dahaarka ah, samaynta lakabka ilaalinta SIC.
Tilmaamaha ugu muhiimsan:
1. Iska caabbinta oksaydhka heerkulka sare:
caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku gaadho 1600 C.
2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalad koloriineed heerkul sare ah.
3. Iska caabbinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.
4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC
| Guryaha SiC-CVD | ||
| Dhismaha Crystal | FCC β wejiga | |
| Cufnaanta | g/cm³ | 3.21 |
| Adag | Vickers adag | 2500 |
| Cabirka Hadhuudhka | μm | 2 ~ 10 |
| Nadiifnimada Kiimikada | % | 99.99995 |
| Awoodda kulaylka | J·k-1 ·K-1 | 640 |
| Heerkulka Sublimation | ℃ | 2700 |
| Xoogga Felexural | MPa (RT 4-dhibcood) | 415 |
| Dhallinta Modul | Gpa (4pt laab, 1300 ℃) | 430 |
| Balaadhinta kulaylka (CTE) | 10-6K-1 | 4.5 |
| Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
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Doonta wafer ee Silicon-carbide ee falcelinta fal-celiska ah
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41 xabbo 4 inch graphite base MOCVD qalab ...
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Doonta wafer ee silikoon kaarbiide square
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Walxaha Kululaynta ee MOCVD Substrate
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19 xabbo oo 2 inch ah oo garaaf ah oo salka MOCVD ah qalab...
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Qaybaha Qaybta Labaad ee Semiconductor ee Epitaxial