Gallium Nitride Substrates|GaN Wafers

Sharaxaad Gaaban:

Gallium nitride (GaN), sida silikoon carbide (SiC) agabka, ayaa iska leh jiilka saddexaad ee agabka semiconductor oo leh ballac ballaaran oo faaruq ah, oo leh ballac ballaaran oo faaruq ah, kulaylka sareeyo, heerka guuritaanka korantada elektaroonigga sare, iyo burburka sare ee beer koronto oo heersare ah. sifooyinka.Aaladaha GaN waxay leeyihiin rajooyin badan oo kala duwan oo codsi ah oo ku saabsan soo noqnoqoshada sare, xawaaraha sare iyo meelaha baahida tamarta sare sida iftiinka tamarta-badbaadinta LED, soo bandhigida saadaasha laysarka, gawaarida tamarta cusub, grid smart, isgaarsiinta 5G.


Faahfaahinta Alaabta

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GaN Wafers

Qalabka jiilka seddexaad ee semiconductor inta badan waxaa ka mid ah SiC, GaN, dheeman, iwm., sababtoo ah ballaca farqiga band (Tusaale ahaan) wuu ka weyn yahay ama la mid yahay 2.3 volts elektaroonik ah (eV), oo sidoo kale loo yaqaan qalabka farqiga ballaaran ee semiconductor. Marka la barbardhigo jiilka koowaad iyo labaad ee qalabka semiconductor, jiilka saddexaad ee qalabka semiconductor waxay leeyihiin faa'iidooyinka kuleylka kuleylka sare, burburka sare ee korantada, heerka guuritaanka korantada sare ee korantada iyo tamarta isku-xidhka sare, kaas oo buuxin kara shuruudaha cusub ee tiknoolajiyada casriga ah ee elektiroonigga ah ee sare. heerkulka, awoodda sare, cadaadis sare, soo noqnoqda sare iyo caabbinta shucaaca iyo xaalado kale oo adag. Waxay leedahay rajada codsiga muhiimka ah ee beeraha difaaca qaranka, duulista, hawada, sahaminta saliidda, kaydinta indhaha, iwm, iyo hoos u dhigi kartaa khasaaraha tamarta by in ka badan 50% in warshado badan oo istiraatiiji ah sida isgaarsiinta broadband, tamarta qoraxda, wax soo saarka baabuurta, nalalka semiconductor, iyo grid smart, oo yarayn kara mugga qalabka in ka badan 75%, taas oo muhiim u ah horumarka sayniska iyo tignoolajiyada aadanaha.

 

Shayga 项目

GaN-FS-CU-C50

GaN-FS-CN-C50

GaN-FS-C-SI-C50

Dhexroorka
晶圆直径

50.8 ± 1 mm

Dhumucda厚度

350 ± 25 μm

Hanuuninta
晶向

Diyaaradda C (0001) ka baxsan xagal dhanka M- dhidibka 0.35 ± 0.15°

Prime Flat
主定位边

(1-100) 0 ± 0.5°, 16 ± 1 mm

Dugsiga Sare
次定位边

(11-20) 0 ± 3°, 8 ± 1 mm

Hab-dhaqanka
导电性

N-nooca

N-nooca

Semi-insulating

Iska caabin (300k)
电阻率

<0.1 Ω·cm

<0.05 Ω·cm

> 106 Ω·cm

TTV
平整度

≤ 15 μm

BOOSAA
弯曲度

≤20 μm

Ga Face Dusha Sarreysa
Ga面粗糙度

<0.2 nm (dhalalay);

ama <0.3 nm (daawaynta dusha sare leh ee epitaxy)

N Wajiga oogada oo qallafsan
N面粗糙度

0.5 ~ 1.5 μm

ikhtiyaarka: 1 ~ 3 nm (dhul wanaagsan); <0.2 nm (la safan)

Cufnaanta Kala-baxa
位错密度

Laga bilaabo 1 x 105 ilaa 3 x 106 cm-2 (waxaa xisaabiyay CL)*

Cufnaanta Ciladda Macro
缺陷密度

<2 cm-2

Aagga la isticmaali karo
有效面积

> 90% (ka-saarida cirifka iyo cilad-xumada)

Waxaa lagu habeyn karaa iyadoo loo eegayo shuruudaha macaamiisha, qaab dhismeedka kala duwan ee silikoon, sapphire, xaashida epitaxial GaN ee ku saleysan SiC.

Goobta shaqada ee Semicera Goobta shaqada ee Semicera 2 Mashiinka qalabka Habaynta CNN, nadiifinta kiimikada, daahan CVD Adeegeena


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