Qalabka jiilka seddexaad ee semiconductor inta badan waxaa ka mid ah SiC, GaN, dheeman, iwm., sababtoo ah ballaca farqiga band (Tusaale ahaan) wuu ka weyn yahay ama la mid yahay 2.3 volts elektaroonik ah (eV), oo sidoo kale loo yaqaan qalabka farqiga ballaaran ee semiconductor. Marka la barbardhigo jiilka koowaad iyo labaad ee qalabka semiconductor, jiilka saddexaad ee qalabka semiconductor waxay leeyihiin faa'iidooyinka kuleylka kuleylka sare, burburka sare ee korantada, heerka guuritaanka korantada sare ee korantada iyo tamarta isku-xidhka sare, kaas oo buuxin kara shuruudaha cusub ee tiknoolajiyada casriga ah ee elektiroonigga ah ee sare. heerkulka, awoodda sare, cadaadis sare, soo noqnoqda sare iyo caabbinta shucaaca iyo xaalado kale oo adag. Waxay leedahay rajada codsiga muhiimka ah ee beeraha difaaca qaranka, duulista, hawada, sahaminta saliidda, kaydinta indhaha, iwm, iyo hoos u dhigi kartaa khasaaraha tamarta by in ka badan 50% in warshado badan oo istiraatiiji ah sida isgaarsiinta broadband, tamarta qoraxda, wax soo saarka baabuurta, nalalka semiconductor, iyo grid smart, oo yarayn kara mugga qalabka in ka badan 75%, taas oo muhiim u ah horumarka sayniska iyo tignoolajiyada aadanaha.
Shayga 项目 | GaN-FS-CU-C50 | GaN-FS-CN-C50 | GaN-FS-C-SI-C50 |
Dhexroorka | 50.8 ± 1 mm | ||
Dhumucda厚度 | 350 ± 25 μm | ||
Hanuuninta | Diyaaradda C (0001) ka baxsan xagal dhanka M- dhidibka 0.35 ± 0.15° | ||
Prime Flat | (1-100) 0 ± 0.5°, 16 ± 1 mm | ||
Dugsiga Sare | (11-20) 0 ± 3°, 8 ± 1 mm | ||
Hab-dhaqanka | N-nooca | N-nooca | Semi-insulating |
Iska caabin (300k) | <0.1 Ω·cm | <0.05 Ω·cm | > 106 Ω·cm |
TTV | ≤ 15 μm | ||
BOOSAA | ≤20 μm | ||
Ga Face Dusha Sarreysa | <0.2 nm (dhalalay); | ||
ama <0.3 nm (daawaynta dusha sare leh ee epitaxy) | |||
N Wajiga oogada oo qallafsan | 0.5 ~ 1.5 μm | ||
ikhtiyaarka: 1 ~ 3 nm (dhul wanaagsan); <0.2 nm (la safan) | |||
Cufnaanta Kala-baxa | Laga bilaabo 1 x 105 ilaa 3 x 106 cm-2 (waxaa xisaabiyay CL)* | ||
Cufnaanta Ciladda Macro | <2 cm-2 | ||
Aagga la isticmaali karo | > 90% (ka-saarida cirifka iyo cilad-xumada) | ||
Waxaa lagu habeyn karaa iyadoo loo eegayo shuruudaha macaamiisha, qaab dhismeedka kala duwan ee silikoon, sapphire, xaashida epitaxial GaN ee ku saleysan SiC. |