Qaybaha GaAs waxay u kala qaybsan yihiin conductive iyo semi-insulating, kuwaas oo si weyn loogu isticmaalo laser (LD), semiconductor light-emitting diode (LED), laser infrared dhow, leysarka quantum si fiican u sarreeya iyo qoraxda waxtarka leh. Chips HEMT iyo HBT ee radar, microwave, mowjadaha millimitirka ama kombiyuutarada xawaaraha aadka u sarreeya iyo isgaarsiinta indhaha; Aaladaha soo noqnoqda raadiyaha ee isgaarsiinta wirelesska, 4G, 5G, isgaarsiinta satellite-ka, WLAN.
Dhawaan, substrate-yada gallium arsenide waxay sidoo kale horumar weyn ka sameeyeen mini-LED, Micro-LED, iyo LED casaan, waxaana si weyn loogu isticmaalaa aaladaha xiran ee AR/VR.
| Dhexroorka | 50mm | 75mm | 100mm | 150mm |
| Habka Kobaca | LEC液封直拉法 |
| Dhumucda wafer | 350 um ~ 625 um |
| Hanuuninta | <100> / <111> / <110> ama kuwo kale |
| Nooca Anshaxa | P - nooca / N - nooca / Semi-insulating |
| Nooca/Dopant | Zn / Si / la furay |
| Isku-xidhka Qaadista | 1E17 ~ 5E19 cm-3 |
| Iska caabinta RT | ≥1E7 ee SI |
| Dhaqdhaqaaqa | ≥4000 |
| Cufnaanta Etch Pit (EPD) | 100~1E5 |
| TTV | ≤ 10 um |
| Qaanso / Warp | ≤20 um |
| Dhamaystir dusha sare | DSP/SSP |
| Calaamadaha leysarka |
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| Darajo | Epi oo dhalaalay / darajada farsamada |










