Hordhaca Dahaarka Silikon Carbide
Kaydinta Uumiga Kiimikada (CVD) Silicon Carbide (SiC) daahan waa lakab aad u adkeysi badan oo u adkaysta, oo ku habboon bay'ada u baahan daxal sare iyo iska caabin kulaylka.Daahan Silicon Carbidewaxaa lagu dabaqaa lakabyo khafiif ah oo ku yaal substrates kala duwan iyada oo loo marayo habka CVD, oo bixiya sifooyin waxqabad heer sare ah.
Astaamaha Muhiimka ah
● -Nadiifin Gaar ah: Ku faantaa ka kooban ultra-sadiif ah99.99995%, annagaDahaarka SiCwaxay yaraynaysaa khatarta faddaraynta ee hawlgallada semiconductor xasaasi ah.
● - Iska caabin sare: Waxay muujisaa iska caabin heer sare ah oo ka dhan ah xirashada iyo daxalka labadaba, taasoo ka dhigaysa mid ku habboon caqabadaha kiimikada iyo goobaha plasma.
● -Hawsha kulaylka sare: Waxay xaqiijisaa waxqabad lagu kalsoonaan karo oo hoos yimaada heerkul aad u daran sababtoo ah sifooyinka kulaylka ee aad u fiican.
● -Xasilooni dhinaca cabbirka ah: Waxay ilaalisaa hufnaanta qaab-dhismeed heerkul ballaadhan oo kala duwan, iyada oo ay ugu wacan tahay isku-xidhka ballaadhinta kulaylka ee hooseeya.
● - Adag oo la xoojiyey: Iyada oo la qiimeeyo qallafsanaanta40 GPA, daahankayaga SiC wuxuu u adkeysanayaa saameyn weyn iyo nabar.
● -Dhammaan dusha sare ee siman: Waxay bixisaa dhamaystir u eg muraayad, hoos u dhigista abuurista walxaha iyo kor u qaadida hufnaanta hawlgalka.
Codsiyada
Semicera Dahaarka SiCWaxaa loo adeegsadaa heerar kala duwan oo wax soo saarka semiconductor, oo ay ku jiraan:
● -Samaynta Chip LED
● -Wax-soo-saarka Polysilicon
● -Kobaca Crystal Semiconductor
● -Silicon iyo SiC Epitaxy
● -Heerarka Oxidation iyo Fiditaanka (TO&D)
Waxaan bixinaa qaybaha SiC-dahaarka leh oo laga sameeyay garaafyada istatic-ka-xoog-sare leh, kaarboon-fibre-xoojiyey kaarboon iyo 4N carbide silicon recrystallized, oo loogu talagalay fal-celiyeyaasha sariiraha dareeraha leh,Beddelayaasha STC-TCS, miliciyeyaasha cutubka CZ, Doonta wafer ee SiCwafer, suufka SiCwafer, tuubada waferka SiC, iyo sidayaal wafer oo loo isticmaalo PECVD, silikoon epitaxy, hababka MOCVD.
Faa'iidooyinka
● - Cimri dheer: Waxay si weyn u yaraynaysaa wakhtiga hoos u dhaca qalabka iyo kharashka dayactirka, kor u qaadida guud ahaan waxtarka wax soo saarka.
● -Tayada la hagaajiyay: Waxay ku guulaysataa sagxadaha nadiifka ah ee lagama maarmaanka u ah farsamaynta semiconductor, taas oo kor u qaadeysa tayada alaabta.
● - Waxtarka oo kordhay: Waxay wanaajisaa hababka kulaylka iyo CVD, taasoo keenta waqtiyo wareeg ah oo gaaban iyo waxsoosaar sare.
Tilmaamaha Farsamada
● -QaabkaFCC β wajiga polycrystaline, inta badan (111) ku jihaysan
● -Cafnaanta: 3.21 g/cm³
● - Adag: 2500 Vicks adag (500g oo culeys ah)
● -Adayg jab: 3.0 MP1/2
● -Isku-balaadhinta kulaylka (100-600 °C): 4.3 x 10-6k-1
● -Elastic Modulus (1300 ℃):435 GPA
● - Dhumucda Filimka Caadiga ah:100 µm
● -Qofka dushiisa oo qallafsan:2-10 µm
Xogta daahirnimada (waxaa lagu qiyaasaa Iftiinka Bixinta Mass Spectroscopy)
| Curiyaha | ppm | Curiyaha | ppm |
| Li | <0.001 | Cu | <0.01 |
| Be | <0.001 | Zn | <0.05 |
| Al | <0.04 | Ga | <0.01 |
| P | <0.01 | Ge | <0.05 |
| S | <0.04 | As | <0.005 |
| K | <0.05 | In | <0.01 |
| Ca | <0.05 | Sn | <0.01 |
| Ti | <0.005 | Sb | <0.01 |
| V | <0.001 | W | <0.05 |
| Cr | <0.05 | Te | <0.01 |
| Mn | <0.005 | Pb | <0.01 |
| Fe | <0.05 | Bi | <0.05 |
| Ni | <0.01 |
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