Semicera'sCassette Waferwaa qayb muhiim ah oo ka mid ah habka wax soo saarka semiconductor, loogu talagalay in si ammaan ah loo hayo oo loo qaado maraqa jilicsan ee semiconductor. TheCassette Waferwaxay bixisaa ilaalin gaar ah, hubinta in malab kasta laga ilaaliyo wasakhda iyo dhaawaca jirka inta lagu jiro maaraynta, kaydinta, iyo gaadiidka.
Lagu dhisay nadiif sare, walxo u adkaysta kiimikaad, SemiceraCassette Waferwaxay dammaanad qaadaysaa heerarka ugu sarreeya ee nadaafadda iyo adkeysiga, lagama maarmaanka u ah ilaalinta sharafta maandooriyaha heer kasta oo wax soo saar ah. Injineernimada saxda ah ee cajaladahani waxay u oggolaanaysaa is dhexgalka aan kala go 'lahayn ee hababka maaraynta otomaatiga ah, yaraynta khatarta wasakheynta iyo dhaawaca farsamada.
NaqshadayntaCassette Wafersidoo kale waxay taageertaa socodka hawada ugu fiican iyo xakamaynta heerkulka, taas oo muhiim u ah hababka u baahan xaalado deegaan oo gaar ah. Haddii loo isticmaalo qolalka nadiifka ah ama inta lagu jiro habaynta kulaylka, SemiceraCassette Waferwaxaa loo habeeyay si uu u daboolo baahiyaha adag ee warshadaha semiconductor, bixinta waxqabad la isku halayn karo oo joogto ah si kor loogu qaado hufnaanta wax soo saarka iyo tayada wax soo saarka.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |