Cassette Wafer

Sharaxaad Gaaban:

Cassette Wafer- Si sax ah loogu habeeyey maaraynta badbaadada leh iyo kaydinta waferrada semiconductor, hubinta ilaalinta ugu fiican iyo nadaafadda inta lagu jiro habka wax soo saarka.


Faahfaahinta Alaabta

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Semicera'sCassette Waferwaa qayb muhiim ah oo ka mid ah habka wax soo saarka semiconductor, loogu talagalay in si ammaan ah loo hayo oo loo qaado maraqa jilicsan ee semiconductor. TheCassette Waferwaxay bixisaa ilaalin gaar ah, hubinta in malab kasta laga ilaaliyo wasakhda iyo dhaawaca jirka inta lagu jiro maaraynta, kaydinta, iyo gaadiidka.

Lagu dhisay nadiif sare, walxo u adkaysta kiimikaad, SemiceraCassette Waferwaxay dammaanad qaadaysaa heerarka ugu sarreeya ee nadaafadda iyo adkeysiga, lagama maarmaanka u ah ilaalinta sharafta maandooriyaha heer kasta oo wax soo saar ah. Injineernimada saxda ah ee cajaladahani waxay u oggolaanaysaa is dhexgalka aan kala go 'lahayn ee hababka maaraynta otomaatiga ah, yaraynta khatarta wasakheynta iyo dhaawaca farsamada.

NaqshadayntaCassette Wafersidoo kale waxay taageertaa socodka hawada ugu fiican iyo xakamaynta heerkulka, taas oo muhiim u ah hababka u baahan xaalado deegaan oo gaar ah. Haddii loo isticmaalo qolalka nadiifka ah ama inta lagu jiro habaynta kulaylka, SemiceraCassette Waferwaxaa loo habeeyay si uu u daboolo baahiyaha adag ee warshadaha semiconductor, bixinta waxqabad la isku halayn karo oo joogto ah si kor loogu qaado hufnaanta wax soo saarka iyo tayada wax soo saarka.

Walxaha

Wax soo saar

Cilmi baaris

nacasnimo

Qiyaasta Crystal

Noocyo badan

4H

Khaladka jihaynta dusha sare

<11-20>4±0.15°

Halbeegyada Korontada

Dopant

n-nooca Nitrogen

iska caabin

0.015-0.025ohm · cm

Halbeegyada Makaanikada

Dhexroorka

150.0 ± 0.2mm

Dhumucda

350± 25 μm

Hanuuninta fidsan ee aasaasiga ah

[1-100]±5°

Dhererka siman ee aasaasiga ah

47.5 ± 1.5mm

Dabaqa labaad

Midna

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Qaansada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Wajiga hore (Si-wejiga) qallafsanaanta (AFM)

Ra≤0.2nm (5μm*5μm)

Qaab dhismeedka

Cufnaanta tuubbada yar

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Wasakhda birta

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tayada hore

Hore

Si

Dhammaadka dusha sare

Si-wejiga CMP

Qaybaha

≤60ea/wafer (xajmiga≥0.3μm)

NA

xoqid

≤5ea/mm Dhererka isugeynta ≤ Dhexroorka

Dhererka isugeynta≤2* Dhexroor

NA

Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga

Midna

NA

Chips-ka-geeska/indents/jabka/taargada hex

Midna

Aagagga nooca badan

Midna

Aagga isugeynta≤20%

Aagga isugeynta≤30%

Calaamadaynta laysarka hore

Midna

Tayada dambe

Dhammaadka dhabarka

C-waji CMP

xoqid

≤5ea/mm, Dhererka isugeynta≤2* Dhexroor

NA

Cilladaha dhabarka (dhab-jeexyada geesaha)

Midna

Dhabar xumada

Ra≤0.2nm (5μm*5μm)

Calaamadaynta laser-ka dambe

1 mm (laga bilaabo cidhifka sare)

Cidhif

Cidhif

Chamfer

Baakadaha

Baakadaha

Epi-diyaar ah oo leh baakad vacuum ah

Baakadaha cajaladaha wafer-ka badan

* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD.

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SiC wafers

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