Semicera wuxuu soo bandhigayaaWafer Cassette Carrier, xal muhiim ah oo loogu talagalay maaraynta aaminka ah oo hufan ee waferrada semiconductor. Sidahaan waxaa loo habeeyay si uu u buuxiyo shuruudaha adag ee warshadaha semiconductor, hubinta ilaalinta iyo daacadnimada waferradaada inta lagu jiro habka wax soo saarka.
Astaamaha Muhiimka ah:
•Dhisme Adag:TheWafer Cassette Carrierwaxaa laga dhisay qalab tayo sare leh oo adkeysi leh oo u adkeysanaya adkeynta jawiga semiconductor, taasoo bixisa difaac la isku halayn karo oo ka dhan ah wasakheynta iyo dhaawaca jirka.
•Toosinta Saxda ah:Naqshadeynta saxda ah ee wafer-ka, qaadahaan wuxuu xaqiijiyaa in maraqyada si badbaado leh loogu hayo meesha, iyadoo yareyneysa khatarta is-waafajinta ama dhaawaca inta lagu jiro gaadiidka.
•Maareynta Fudud:Ergonomically loogu talagalay fududaynta isticmaalka, qaaduhu wuxuu fududeeyaa habka rarista iyo dejinta, hagaajinta waxtarka socodka shaqada ee jawiga nadiifka ah.
•Waafaqid:La jaanqaadi kara noocyo kala duwan oo cabbirro wafer ah iyo noocyo, taasoo ka dhigaysa mid ku habboon baahiyaha wax soo saarka semiconductor ee kala duwan.
La kulan ilaalin aan la soo koobi karin iyo ku habboonaanta Semicera'sWafer Cassette Carrier. Sidayaalkayaga waxaa loogu talagalay inuu la kulmo heerarka ugu sarreeya ee wax-soo-saarka semiconductor, iyadoo la hubinayo in maraqyadaadu ku sii jiraan xaalad nadiif ah bilaw ilaa dhammaad. Aamin Semicera si aad u bixiso tayada iyo isku halaynta aad uga baahan tahay hababkaaga ugu daran.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
