Semicera waxay soo bandhigaysaa hogaaminta warshadahaWafer Carriers, loogu talagalay in lagu bixiyo ilaalin heer sare ah iyo gaadiidka aan kala go 'lahayn ee waferrada yaryar ee jilicsan ee heerarka kala duwan ee habka wax soo saarka. OurWafer Carrierssi taxadar leh ayaa loogu qaabeeyey si ay u daboolaan baahiyaha adag ee soo saarista semiconductor-ka casriga ah, iyaga oo hubinaya hufnaanta iyo tayada weelashaada in la ilaaliyo mar walba.
Astaamaha Muhiimka ah:
• Dhismaha Alaabta Qiimaha Badan:Waxaa laga sameeyay agab tayo sare leh oo u adkaysta wasakhda kuwaas oo dammaanad qaadaya cimri dhererka iyo cimri dhererka, taas oo ka dhigaysa mid ku habboon deegaan nadiif ah.
•Naqshadda Saxda ah:Waxay muujisaa toosinta booska saxda ah iyo habab xafidan si looga hortago silbashada iyo dhaawaca inta lagu jiro maaraynta iyo gaadiidka.
•Waafaqid badan:Waxay dejisaa cabbirro iyo dhumucyo kala duwan oo kala duwan, iyadoo siinaya dabacsanaan codsiyada semiconductor ee kala duwan.
•Maareynta Ergonomic:Naqshadaynta fudud iyo isticmaale-saaxiibtinimada waxay sahlaysa rarista iyo dejinta fudud, kor u qaadida hufnaanta hawlgalka iyo yaraynta wakhtiga maaraynta.
•Ikhtiyaarada la beddeli karo:Waxay bixisaa habayn si ay u buuxiso shuruudo gaar ah, oo ay ku jiraan xulashada alaabta, hagaajinta cabbirka, iyo calaamadaynta isku-dhafka socodka shaqada ee la hagaajiyay.
Ku xooji habka wax soo saarka semiconductor-kaaga Semicera'sWafer Carriers, xalka ugu fiican ee ka ilaalinaya weelashaada wasakheynta iyo waxyeelada farsamada. Ku kalsoonow sida ay nooga go'an tahay tayada iyo hal-abuurka si aan u soo bandhigno badeecado aan buuxin oo kaliya laakiin ka sarreeya heerarka warshadaha, anagoo hubinayna in hawlahaagu ay si habsami leh oo hufan u socdaan.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |