Faa'iidooyinka
Iska caabbinta oksaydhka heerkulka sare
Iska caabin daxalka oo heersare ah
Iska caabbinta abrasion wanaagsan
Isku-xidhka sare ee dhaqdhaqaaqa kulaylka
Nafta dufanka, cufnaanta hoose
adkaanta sare
Naqshad la habeeyey.
Codsiyada
-Goob u adkaysta: baadiyaha, saxan, biibiile ciid, dahaarka duufaanka, foosto shiidi, iwm.
Goobta Heerkulka Sare: SiC Slab, Quenching Furnace Tube, Tube Radiant, Crucible, Cunsurka Kuleyliyaha, Roller, Beam, Heat Beddelka, Dhuumaha Hawada Qabow, Nozzle Gubida, Tuubada Ilaalinta Heerarka, SiC Doonta, Qaabdhismeedka Gaariga, Setter, iwm.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck, sic paddle, sic caseette, sic tube diffusion, fargeeto wafer, saxan nuugid, hage, iwm.
-Silicon Carbide Seal Field: dhammaan noocyada giraanta shaabadda, sida, baadiyaha, iwm.
Goobta Sawirka: Cantilever Paddle, Foosto wax shiida, Roller Silicon Carbide, iwm.
- Goobta baytariyada Lithium
Tilmaamaha Jirka ee SiC
| Hanti | Qiimaha | Habka |
| Cufnaanta | 3.21 g/cc | Quus-sabeen iyo cabbir |
| Kuleyl gaar ah | 0.66 J/g °K | Fiishka laysarka la garaaco |
| Xoog dabacsanaan | 450 MPa560 MPa | 4-dhibcood laablaab, 1300 ° |
| adkaanta jabka | 2.94 MPa m1/2 | Microindentation |
| Adag | 2800 | Vicker's, 500 g oo culeys ah |
| Modulus Elastic ModulusYoung's Modulus | 450 GPa430 GPA | 4 pt qaloocsan, RT4 pt laab, 1300 °C |
| Cabbirka hadhuudhka | 2 - 10 µm | SEM |
Guryaha kulaylka ee SiC
| Habdhaqanka kulaylka | 250 W/m °K | Habka Flash Laser, RT |
| Balaadhinta kulaylka (CTE) | 4.5 x 10-6 °K | Heerkulka qolka ilaa 950C, silica dilatometer |
Qiyaasaha Farsamada
| Shayga | Unug | Xogta | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| Nuxurka SiC | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Waxa ku jira silikoon bilaash ah | % | 15 | 0 | 0 | 0 | 0 |
| Heerkulka adeegga ugu sarreeya | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Cufnaanta | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Bannaanka furan | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Xoog laabashada 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Xoog laabashada 1200 ℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Heerarka kulaylka 1200 ℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Isku-dhafka ballaarinta kulaylka | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
Daahan CVD silicon carbide ee dusha sare ee alaabta dhoobada silikoon carbide recrystallized waxay gaari kartaa nadiif ah in ka badan 99.9999% si loo daboolo baahiyaha macaamiisha ee warshadaha semiconductor.
