Soosaarayaasha Waferka Shiinaha, Alaab-qeybiyeyaasha, Warshada
Waa maxay waferka semiconductor?
Wafer-ka yar-yar ee semiconductor waa jeex dhuuban, wareeg ah oo ah walxo semiconductor ah oo u adeega sida aasaaska abuurista wareegyada isku dhafan (ICs) iyo aaladaha kale ee elektiroonigga ah. Waferku wuxuu bixiyaa meel siman oo isku mid ah kaas oo lagu dhisay qaybo kala duwan oo elektiroonig ah.
Habka wax-soo-saarka wafer-ku wuxuu ku lug leeyahay dhowr tillaabo, oo ay ku jiraan koritaan hal kiristaalo ah oo ka mid ah walxaha semiconductor ee la rabo, in la jarjaro kareemka maraqa khafiifka ah iyadoo la isticmaalayo miinshaar dheeman ah, ka dibna nadiifinta iyo nadiifinta maraqa si ay meesha uga saarto ciladaha dusha sare ama wasakhda. Waferrada ka soo baxaa waxay leeyihiin meel aad u siman oo siman, taas oo muhiim u ah hababka soo-saarka xiga.
Marka waferrada la diyaariyo, waxay maraan habraacyo taxane ah oo wax-soo-saar semiconductor ah, sida sawir-qaadista, etching, dhigista, iyo doping, si loo abuuro qaabab iyo lakabyo adag oo loo baahan yahay si loo dhiso qaybaha elektiroonigga ah. Nidaamyadan waxaa lagu soo celiyaa marar badan hal mar si loo abuuro wareegyo isku dhafan oo badan ama qalab kale.
Ka dib markii habka wax-soo-saarka la dhammeeyo, chips-yada gaarka ah ayaa la kala soocaa iyadoo la gooyo waferka iyadoo la raacayo khadadka horay loo sii qeexay. Chips-yada kala go'ay ayaa markaa la xirxiraa si loo ilaaliyo oo loo bixiyo isku xirka korantada ee la dhexgalka aaladaha elektiroonigga ah.
Qalabka kala duwan ee wafer
Mashiinnada Semiconductor-ka ayaa ugu horreyn laga sameeyay silikoon hal-crystal ah taas oo ay ugu wacan tahay badnaanteeda, sifooyin koronto oo aad u wanaagsan, iyo waafaqsanaanta hababka wax soo saarka semiconductor caadiga ah. Si kastaba ha noqotee, iyadoo ku xiran codsiyada gaarka ah iyo shuruudaha, agabyada kale ayaa sidoo kale loo isticmaali karaa in lagu sameeyo maraqa. Waa kuwan tusaalayaal:
Silicon carbide (SiC) waa shay semiconductor bandgap ballaaran kaas oo bixiya sifooyin jireed heer sare ah marka loo eego agabka dhaqameed. Waxay kaa caawinaysaa yaraynta cabbirka iyo miisaanka aaladaha kala duwan, modules, iyo xitaa nidaamyada oo dhan, iyadoo hagaajinaysa waxtarka.
Astaamaha muhiimka ah ee SiC:
- -Bandiqadda ballaaran:Xajmiga SiC wuxuu ku saabsan yahay saddex jeer ka silikoon, taasoo u oggolaanaysa inay ku shaqeyso heerkul sare, ilaa 400°C.
- -Goob Burbur Ba'an oo Sare:SiC waxay u adkeysan kartaa ilaa toban jeer goobta korantada ee silikoon, taasoo ka dhigaysa mid ku habboon aaladaha korantada sare.
- -Hawlgalka kulaylka sare:SiC waxay si hufan u baabi'isaa kulaylka, iyada oo ka caawinaysa aaladaha inay ilaashadaan heerkulka shaqada ee ugu fiican oo ay kordhiyaan cimrigooda.
- Xawaaraha qulqulka korantada ee saturation sare:Iyada oo labanlaab xawaaraha qulqulka ee silikoon, SiC waxay awood u siinaysaa isbeddello sare oo isbeddel ah, iyada oo gacan ka geysanaysa yaraynta qalabka.
Codsiyada:
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-Awoodda Elektarooniga ah:Aaladaha korontada ee SiC waxay ku fiican yihiin koronto-sare, hadda-sare, heerkul sare, iyo jawi-soo noqnoqosho sarreeya, taasoo si weyn kor ugu qaadaysa waxtarka beddelka tamarta. Waxaa si weyn loogu isticmaalaa gawaarida korontada ku shaqeysa, saldhigyada dallaca, nidaamyada sawir-qaadista, gaadiidka tareenka, iyo xadhkaha smart.
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-Isgaadhsiinta Microwave:Qalabka GaN RF ee ku saleysan SiC ayaa muhiim u ah kaabayaasha isgaarsiinta wireless-ka, gaar ahaan saldhigyada 5G. Aaladahani waxay isku daraan kuleyliyaha kulaylka wanaagsan ee SiC iyo soo-saarka RF-sare ee GaN, taasoo ka dhigaysa doorashada la doorbidayo jiilka soo socda ee shabakadaha isgaarsiinta ee soo noqnoqda.
Gallium nitride (GAN)waa jiilka sadexaad ee balaastig ballaaran semiconductor sheyga leh bandgap weyn, korantada kulaylka sare, xawaaraha qulqulka qulqulka korantada sare, iyo sifooyin burbursan oo heer sare ah. Aaladaha GaN waxay leeyihiin rajooyin codsi oo ballaadhan oo ku saabsan soo noqnoqoshada sare, xawaaraha sare, iyo meelaha awoodda sare leh sida nalka tamarta-badbaadinta LED-ka, bandhigyada saadaalinta laysarka, baabuurta korantada, xadhkaha smart, iyo isgaarsiinta 5G.
Gallium arsenide (GaAs)waa qalab semiconductor caan ku ah soo noqnoqoshada sare, dhaqdhaqaaqa elektarooniga sare, wax soo saarka tamarta sare, qaylada hoose, iyo linearity wanaagsan. Waxaa si weyn loogu isticmaalaa warshadaha optoelectronics iyo microelectronics. In optoelectronics, GaAs substrates waxaa loo isticmaalaa in lagu soo saaro LED (diodes iftiin-bixiya), LD (laser diodes), iyo qalabka photovoltaic. Microelectronics, waxay ka shaqeeyaan wax soo saarka MESFETs (birta-semiconductor field-effect transistor), HEMTs (transistor-ka dhaqdhaqaaqa sare ee elektiroonigga ah), HBTs ( transistors heterojunction bipolar transistors), ICs (wareeg isku dhafan), mikrowave-diodes, iyo aaladaha saamaynta Hall.
Indium phosphide (InP)waa mid ka mid ah semiconductors-ka muhiimka ah ee III-V, oo loo yaqaan dhaqdhaqaaqa elektaroonigga sare, caabbinta shucaaca aadka u wanaagsan, iyo bandgap ballaaran. Waxaa si weyn loogu isticmaalaa warshadaha optoelectronics iyo microelectronics.
