Tantalum Carbide CVD Hagaha Dahaarka Giraan

Sharaxaad Gaaban:

Silicon carbide (SiC) waa shay muhiim ah oo ku jira jiilka saddexaad ee semiconductors, laakiin heerka waxsoosaarkiisu wuxuu ahaa qodobka xaddidaya koritaanka warshadaha. Kadib baaritaan dheer oo lagu sameeyay shaybaarada Semicera, waxaa la ogaaday in TaC la buufiyay oo la miiray ay ka maqan tahay nadiifnimada lagama maarmaanka ah iyo labbiska. Taas bedelkeeda, habka CVD wuxuu hubinayaa heerka nadiifnimada ee 5 PPM iyo labis heer sare ah. Isticmaalka CVD TaC wuxuu si weyn u wanaajiyaa heerka wax-soo-saarka ee wafers carbide silicon. Waan soo dhawaynaynaa wada-hadalladaTantalum Carbide CVD Hagaha Dahaarka Giraan si loo sii dhimo kharashyada waferrada SiC.

 


Faahfaahinta Alaabta

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Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.

 

Silicon carbide (SiC) waa shay muhiim ah oo ku jira jiilka saddexaad ee semiconductors, laakiin heerka waxsoosaarkiisu wuxuu ahaa qodobka xaddidaya koritaanka warshadaha. Kadib baaritaan dheer oo lagu sameeyay shaybaarada Semicera, waxaa la ogaaday in TaC la buufiyay oo la miiray ay ka maqan tahay nadiifnimada lagama maarmaanka ah iyo labbiska. Taas bedelkeeda, habka CVD wuxuu hubinayaa heerka nadiifnimada ee 5 PPM iyo labis heer sare ah. Isticmaalka CVD TaC wuxuu si weyn u wanaajiyaa heerka wax-soo-saarka ee wafers carbide silicon. Waan soo dhawaynaynaa wada-hadalladaTantalum Carbide CVD Hagaha Dahaarka Giraan si loo sii dhimo kharashyada waferrada SiC.

Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Simicera ee kobaca kareemka keliya.

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leh iyo la'aanteed TaC

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Kadib isticmaal TaC (midig)

Intaa waxaa dheer, Semicera'sAlaabta ku dahaaran TaCmuuji nolol adeeg dheer iyo iska caabin heerkul sare oo weyn marka la barbar dhigoDahaarka SiC.Cabbirrada shaybaadhka ayaa muujiyay in ourDahaarka TaCwaxay si joogto ah u samayn kartaa heerkul ah ilaa 2300 darajo Celsius muddo dheer. Hoos waxaa ku yaal tusaalooyin tusaalayaal ah:

 
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