Tantalum Kaarbide Dahaarka Taarikada Taageerada Pedestal

Sharaxaad Gaaban:

Tantalum Carbide Coated Susceptor Plate by Semicera waxaa loogu talagalay in lagu isticmaalo silikoon carbide epitaxy iyo koritaanka crystal. Waxay ku siisaa taageero deggan heer kulka sare, daxalka, ama jawi cadaadis sare, lagama maarmaanka u ah hababkan horumarsan. Sida caadiga ah loo isticmaalo reactors-cadaadiska sarreeya, qaababka foornada, iyo qalabka kiimikada, waxay hubisaa waxqabadka nidaamka iyo xasilloonida. Tiknoolajiyada dahaarka hal-abuurka leh ee Semicera waxay dammaanad qaadaysaa tayada sare iyo isku halaynta codsiyada injineernimada.


Faahfaahinta Alaabta

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Tantalum carbide oo dahaarka leh saxanka taageerada susceptorwaa qaab-dhismeed jilicsan ama taageero oo lagu daboolay lakab khafiif ahtantalum carbide. Dahaarkan waxa lagu samayn karaa duleelka duleelka iyadoo la adeegsanayo farsamooyin ay ka mid yihiin dhigista uumiga jidhka (PVD) ama kaydka uumiga kiimikada (CVD), taasoo siinaysa suulaha sifooyinka sare eetantalum carbide.

 

Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.

 

Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Simicera ee kobaca kareemka keliya.

Astaamaha ugu muhiimsan ee tantalum carbide ee dahaarka leh taarikada taageerada waxaa ka mid ah:

1. Dejinta heerkulka sare: Tantalum carbide waxay leedahay xasillooni heerkul sare ah oo heer sare ah, taasoo ka dhigaysa saxanka taageerada saldhigga ah ee dahaarka leh ee ku habboon baahiyaha taageerada ee jawiga shaqada ee heerkulka sare.

2. Iska caabinta daxalka: Tantalum carbide daahan waxay leedahay iska caabin wanaagsan oo daxalka ah, waxay iska caabin kartaa daxalka kiimikada iyo oksaydhka, waxayna kordhisaa nolosha adeegga saldhigga.

3. Qallafsanaanta sare iyo xirashada caabbinta: Qalafsanaanta sare ee tantalum carbide daahan ayaa siinaya saxanka taageerada saldhigga ah ee caabbinta wanaagsan, taas oo ku habboon waqtiyada u baahan caabbinta xirashada sare.

4. Degganaanshaha kiimikaad: Tantalum carbide waxay leedahay xasillooni sare oo ah walxo kiimiko ah oo kala duwan, taasoo ka dhigaysa saxanka taageerada saldhigga dahaarka ah inuu si fiican u shaqeeyo qaar ka mid ah bay'adaha daxalka.

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leh iyo la'aanteed TaC

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Kadib isticmaal TaC (midig)

Intaa waxaa dheer, Semicera'sAlaabta ku dahaaran TaCmuuji nolol adeeg dheer iyo iska caabin heerkul sare oo weyn marka la barbar dhigoDahaarka SiC.Cabbirrada shaybaadhka ayaa muujiyay in ourDahaarka TaCwaxay si joogto ah u samayn kartaa heerkul ah ilaa 2300 darajo Celsius muddo dheer. Hoos waxaa ku yaal tusaalooyin tusaalayaal ah:

 
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