TaC Coted MOCVD Graphite Susceptor

Sharaxaad Gaaban:

TaC Coated MOCVD Graphite Susceptor by Semicera waxaa loogu talagalay adkeysi sare iyo iska caabin heerkul sare oo gaar ah, taasoo ka dhigaysa mid ku habboon codsiyada Epitaxy MOCVD. Dabaylahani wuxuu wanaajiyaa hufnaanta iyo tayada wax soo saarka UV LED. Lagu soo saaray si sax ah, Semicera waxay hubisaa waxqabadka ugu sarreeya iyo isku halaynta badeecad kasta.


Faahfaahinta Alaabta

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 Daahan TaCwaa daahan shay muhiim ah, kaas oo inta badan lagu diyaariyo saldhigga garaafyada iyadoo la adeegsanayo tignoolajiyada kaydinta uumiga kiimikada ee birta ah (MOCVD). Dahaarkani wuxuu leeyahay sifooyin aad u fiican, sida qallafsanaanta sare, caabbinta xirashada aadka u fiican, iska caabbinta heerkulka sare iyo xasilloonida kiimikada, waxayna ku habboon tahay codsiyada injineernimada sare ee kala duwan.

Tiknoolajiyada MOCVD waa tignoolajiyada korriinka filimada khafiifka ah ee sida caadiga ah loo isticmaalo taas oo dhigata filimka la rabo ee ka samaysan ee dusha sare ee substrate iyadoo ka falcelinaysa hor-u-yaal dabiici ah oo bir ah oo leh gaas firfircoon oo heerkul sarreeya. Marka la diyaarinayoDaahan TaC, Doorashada horudhacyada dabiiciga ah ee birta ah ee ku habboon iyo ilaha kaarboonka, xakamaynta xaaladaha falcelinta iyo xuduudaha dhigaalka, filimka TaC ee lebbiska iyo cufan ayaa lagu dhejin karaa saldhigga garaafyada.

 

Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.

 

Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Simicera ee kobaca kareemka keliya.

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leh iyo la'aanteed TaC

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Kadib isticmaal TaC (midig)

Intaa waxaa dheer, Semicera'sAlaabta ku dahaaran TaCmuuji nolol adeeg dheer iyo iska caabin heerkul sare oo weyn marka la barbar dhigoDahaarka SiC.Cabbirrada shaybaadhka ayaa muujiyay in ourDahaarka TaCwaxay si joogto ah u samayn kartaa heerkul ah ilaa 2300 darajo Celsius muddo dheer. Hoos waxaa ku yaal tusaalooyin tusaalayaal ah:

 
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