Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.
Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Simicera ee kobaca kareemka keliya.
leh iyo la'aanteed TaC
Kadib isticmaal TaC (midig)
Intaa waxaa dheer, Semicera'sAlaabta ku dahaaran TaCmuuji nolol adeeg dheer iyo iska caabin heerkul sare oo weyn marka la barbar dhigoDahaarka SiC.Cabbirrada shaybaadhka ayaa muujiyay in ourDahaarka TaCwaxay si joogto ah u samayn kartaa heerkul ah ilaa 2300 darajo Celsius muddo dheer. Hoos waxaa ku yaal tusaalooyin tusaalayaal ah:
