TaC Dahaarka Epi Wafer Carrier

Sharaxaad Gaaban:

TaC Dahaarka Epi Wafer Carrier ee uu leeyahay Semicera waxaa loogu talagalay waxqabadka sare ee hababka epitaxial. Dahaarkeeda tantalum carbide waxay bixisaa adkeysi gaar ah iyo xasillooni heerkul sare ah, hubinta taageerada wafer-ka ugu fiican iyo hufnaanta wax soo saarka ee kor loo qaaday. Soo saarista saxda ah ee Semicera waxay dammaanad qaadaysaa tayada joogtada ah iyo isku halaynta codsiyada semiconductor.

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TaC dahaarka sidayaal wafer wafer ahInta badan waxaa loo isticmaalaa diyaarinta qalabka wax-qabadka sare leh ee optoelectronic, qalabka korontada, dareemayaasha iyo meelaha kale. Tanisidaha wafer epitaxialwaxaa loola jeedaa dhigaalka eeTaCfilim khafiif ah oo ku saabsan substrate inta lagu guda jiro habka koritaanka crystal si ay u sameeyaan wafer leh qaab-dhismeedka gaarka ah iyo waxqabadka diyaarinta xiga ee qalabka.

Tignoolajiyada kaydinta uumiga kiimikada (CVD) ayaa inta badan loo adeegsadaa diyaarintaTaC dahaarka sidayaal wafer wafer ah. Adigoo ka falcelinaya horudhacyada dabiiciga ah ee birta ah iyo gaaska isha kaarboonka ee heerkul sarreeya, filimka TaC waxaa lagu dhejin karaa dusha sare ee substrate-ka crystal. Filimkani wuxuu yeelan karaa koronto aad u fiican, muuqaal iyo qalab farsamo wuxuuna ku habboon yahay diyaarinta aaladaha kala duwan ee waxqabadka sare leh.

Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.

Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Simicera ee kobaca kareemka keliya.

Hufnaanta sare ee tantalum carbide coating_ waxay wanaajisaa waxtarka wax soo saarka warshadaha waxayna yaraynaysaa kharashka dayactirka Sawirka

Qaybta tac ee koritaanka hal crystal

Dharka ka-hortagga dharka tantalum carbide dahaarka_ Waxay ka ilaalisaa qalabka xirashada iyo daxalka Sawirka sifaysan

Garaafka giraanta dahaarka leh ee TaC

leh iyo la'aanteed TaC

Kadib isticmaal TaC (midig)

Intaa waxaa dheer, Semicera'sAlaabta ku dahaaran TaCmuuji nolol adeeg dheer iyo iska caabin heerkul sare oo weyn marka la barbar dhigoDahaarka SiC.Cabbirrada shaybaadhka ayaa muujiyay in ourDahaarka TaCwaxay si joogto ah u samayn kartaa heerkul ah ilaa 2300 darajo Celsius muddo dheer. Hoos waxaa ku yaal tusaalooyin tusaalayaal ah: