SOI Wafers

Sharaxaad Gaaban:

Waferka SOI waa qaab-dhismeedka sandwich-ka oo kale ah oo leh saddex lakab; Oo ay ku jiraan lakabka sare (lakabka qalabka), badhtamaha lakabka ogsijiinta ee la aasay (lakabka SiO2 ee dahaadhka ah) iyo substrate hoose (silikoon badan). Waferrada SOI waxaa lagu soo saaraa habka SIMOX iyo tignoolajiyada isku xidhka wafer, kaas oo u oggolaanaya lakabyo qalab khafiif ah oo sax ah, dhumuc labis ah iyo cufnaanta cillad hoose.

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SOI Wafers (1)

Goobta codsiga

1. Xawaaraha sare ee wareegga isku dhafan

2. Aaladaha Microwave

3. Heerkulka sare ee wareegga isku dhafan

4. Qalabka korontada

5. Wareegga isku dhafan ee tamarta hooseeya

6. MEMS

7. Koronto yar oo isku dhafan oo isku dhafan

Shayga		Dood
Guud ahaan	Dhexroorka Wafer 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Qaanso/Warp 翘曲度	<10um
	Qaybaha 颗粒度(	0.3um <30e
	Dabaqado/Notch 定位边/定位槽	Filan ama Darajo
	Ka saarida gees 边缘去除(mm)	/
Lakabka Qalabka 器件层	Qalabka-lakabka Nooca/Dopant 器件层掺杂类型	N-Nooca/P-Nooca B/ P/ Sb / Sida
	Hanuuninta lakabka qalabka 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Dhumucda lakabka qalabka 器件层厚度(um)	0.1 ~ 300um
	Iska caabinta lakabka qalabka 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Qaybaha lakabka qalabka 器件层颗粒度(	<30ea@0.3
	Lakabka Qalabka TTV 器件层TTV(	<10um
	Lakabka Qalabka Dhamaystir 器件层表面处理	La tolay
SANDUUQ	Dhumucda Heerarka oksaydhka ee la aasay 埋氧层厚度(um)	50nm(500Å)~15um
Lakabka gacanta 衬底	Qabo Nooca Waferka/Dopant 衬底层类型	N-Nooca/P-Nooca B/ P/ Sb / Sida
	Xakamee Hanuuninta Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Xakamee iska caabin Wafer 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Xakamee Dhumucda Waferka 衬底厚度(um)	>100um
	Qabo Dhammaystirka Wafer 衬底表面处理	La tolay
Wafers SOI ee qeexitaannada bartilmaameedka ah waxaa loo habeyn karaa iyadoo loo eegayo shuruudaha macaamiisha.