Semicera's SOI Wafer (Silicon On Insulator) waxaa loogu talagalay in lagu bixiyo go'doomin koronto oo heersare ah iyo waxqabadka kulaylka. Qaab dhismeedka cusub ee wafer-ka, oo leh lakabka silikoon ee lakabka dahaaran, waxay hubisaa waxqabadka qalabka oo la xoojiyay iyo isticmaalka tamarta oo yaraada, taasoo ka dhigaysa mid ku habboon codsiyada kala duwan ee tignoolajiyada sare.
Wafers-yadayada SOI waxay bixiyaan faa'iidooyin gaar ah oo loogu talagalay wareegyada isku dhafan iyadoo la yareynayo awoodda dulin waxayna hagaajinaysaa xawaaraha iyo waxtarka qalabka. Tani waxay muhiim u tahay qalabka elektiroonigga ah ee casriga ah, halkaasoo waxqabadka sare iyo waxtarka tamarta ay lagama maarmaan u yihiin macaamiisha iyo codsiyada warshadaha labadaba.
Semicera waxay shaqaaleysiisaa farsamooyinka wax soo saarka ee horumarsan si ay u soo saarto wafers SOI oo leh tayo iyo isku hallayn joogto ah. Wafersyadani waxay bixiyaan dahaarka kulaylka heer sare ah, iyaga oo ka dhigaya kuwo ku habboon in loo isticmaalo goobaha ay kuleylku ka walaacsan yihiin, sida qalabka elektiroonigga ah ee cufnaanta sare leh iyo hababka maaraynta awoodda.
Isticmaalka waferrada SOI ee samaynta semiconductor waxay u oggolaanaysaa horumarinta jajabyo yaryar, dhaqso badan, oo la isku halleyn karo. Ballanqaadka Semicera ee injineernimada saxda ah waxay hubisaa in waferradayada SOI ay buuxiyaan heerarka sare ee looga baahan yahay tignoolajiyada casriga ah ee dhinacyada sida isgaarsiinta, baabuurta, iyo elektiroonigga macaamiisha.
Doorashada Semicera's SOI Wafer waxay ka dhigan tahay maalgelinta alaabada taageerta horumarinta tignoolajiyada elektiroonigga ah iyo kuwa yaryar. Wafersyadayada waxaa loogu talagalay in lagu bixiyo waxqabadka la xoojiyay iyo adkeysiga, ka qayb qaadashada guusha mashaariicdaada tiknoolajiyada sare iyo hubinta inaad ku sii jirto safka hore ee hal-abuurka.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |