Semicera's SiN Ceramics Plain Substrates waxay bixiyaan xal wax qabad sare leh ee codsiyada kala duwan ee elektiroonigga ah iyo warshadaha. Lagu yaqaan kuleylkooda wanaagsan iyo xoogga farsamada, substrates-yadani waxay xaqiijinayaan hawlgal la isku halayn karo oo ka jira deegaan baahida loo qabo.
Ceramics-kayaga SiN (Silicon Nitride) waxaa loogu talagalay in lagu xakameeyo heerkul aad u daran iyo xaaladaha walaaca badan, taasoo ka dhigaysa inay ku habboon yihiin qalabka elektiroonigga ah ee awoodda sare leh iyo aaladaha semiconductor sare. Adkaysigooda iyo iska caabbinta shoogga kulaylka ayaa ka dhigaya kuwo ku habboon in loo isticmaalo codsiyada halka kalsoonida iyo waxqabadka ay muhiim u yihiin.
Habka wax-soo-saarka saxda ah ee Semicera wuxuu hubiyaa in substrate kasta oo cadi uu la kulmo heerarka tayada adag. Tani waxay keenaysaa substrates leh dhumuc joogto ah iyo tayada dusha sare, kuwaas oo lagama maarmaan u ah in la gaaro waxqabadka ugu fiican ee shirarka iyo nidaamyada elektiroonigga ah.
Marka lagu daro faa'iidooyinka kulaylka iyo farsamada, SiN Ceramics Plain Substrates waxay bixiyaan sifooyin koronto oo heer sare ah. Tani waxay hubinaysaa faragelinta ugu yar ee korantada waxayna gacan ka geysataa xasiloonida guud iyo waxtarka qaybaha elektaroonigga ah, kor u qaadista cimrigooda shaqo.
Markaad doorato Semicera's SiN Ceramics Plain Substrates, waxaad dooranaysaa badeecad isku daraysa sayniska agabka horumarsan iyo soosaar heersare ah. Ballanqaadkayaga tayada iyo hal-abuurka ayaa dammaanad qaadaya inaad hesho substrate-ka buuxiya heerarka warshadaha ee ugu sarreeya oo taageera guusha mashaariicda tignoolajiyada horumarsan.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
