Semicera Silicon Wafers si taxadar leh ayaa loo habeeyey si ay ugu adeegaan aasaaska qalabyada kala duwan ee semiconductor, minprocessors-ka yar ilaa unugyada sawir-qaadista. Waferradan waxaa lagu farsameeyay saxnaanta sare iyo nadiifnimada, hubinta waxqabadka ugu wanaagsan ee codsiyada kala duwan ee elektiroonigga ah.
Lagu soo saaray iyadoo la adeegsanayo farsamooyin horumarsan, Semicera Silicon Wafers waxay soo bandhigaysaa dabacsanaan gaar ah iyo isku mid ah, kuwaas oo muhiim u ah in la gaaro wax soo saar sare oo soo saarista semiconductor. Heerkan saxda ah wuxuu kaa caawinayaa yaraynta cilladaha iyo hagaajinta waxtarka guud ee qaybaha elektaroonigga ah.
Tayada sare ee Semicera Silicon Wafers waxay ka muuqataa sifooyinkooda korantada, kuwaas oo gacan ka geysta kor u qaadista waxqabadka qalabka semiconductor. Iyada oo leh heerar wasakh ah oo hooseeya iyo tayada kristanta sare, waferradan ayaa bixiya goobta ugu habboon ee lagu horumarinayo qalabka elektiroonigga ah ee waxqabadka sarreeya.
Waxaa lagu heli karaa cabbirro iyo tilmaamo kala duwan, Semicera Silicon Wafers waxaa lagu habayn karaa si loo daboolo baahiyaha gaarka ah ee warshadaha kala duwan, oo ay ku jiraan xisaabinta, isgaarsiinta, iyo tamarta la cusboonaysiin karo. Hadday tahay wax-soo-saar ballaadhan ama cilmi-baadhis khaas ah, waferradani waxay keenaan natiijooyin la isku halayn karo.
Semicera waxaa ka go'an in ay taageerto kobaca iyo ikhtiraacida warshadaha semiconductor-ka iyada oo bixisa wafers silicon tayo sare leh oo la kulma heerarka warshadaha ugu sarreeya. Iyada oo diiradda la saarayo saxnaanta iyo isku halaynta, Semicera waxay u saamaxdaa soosaarayaasha inay riixaan xuduudaha tignoolajiyada, iyagoo hubinaya in alaabtoodu ay ku sii jiraan safka hore ee suuqa.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
