Substrates Semicera Silicon Substrates waxaa loo habeeyey si ay u daboolaan baahida adag ee warshadaha semiconductor, iyagoo bixiya tayada iyo saxnaanta aan la barbar dhigi karin. Substrate-yadani waxay bixiyaan aasaas lagu kalsoonaan karo oo loogu talagalay codsiyada kala duwan, laga bilaabo wareegyada isku dhafan ilaa unugyada sawir-qaadista, hubinta waxqabadka ugu fiican iyo cimri dhererka.
Nadiifadda sare ee Semicera Silicon Substrates waxay hubisaa cilladaha ugu yar iyo sifooyinka korantada ee sarreeya, kuwaas oo muhiim u ah soo saarista qaybaha elektiroonigga ah ee waxtarka leh. Heerkan saafiga ah wuxuu ka caawiyaa dhimista lumitaanka tamarta iyo hagaajinta guud ahaan waxtarka qalabka semiconductor.
Semicera waxay shaqaaleysiisaa farsamooyin wax soo saar oo casri ah si ay u soo saarto substrates silikoon oo leh labbis gaar ah iyo siman. Saxnimadani waxay lama huraan u tahay in la gaadho natiijooyin joogto ah oo ku saabsan samaynta semiconductor, halkaas oo xitaa kala duwanaanshiyaha ugu yar uu saamayn ku yeelan karo waxqabadka aaladda iyo wax-soo-saarka.
Waxaa lagu heli karaa cabbirro kala duwan iyo tilmaamo, Semicera Silicon Substrates waxay daboolaan baahiyo warshadeed oo ballaaran. Haddii aad horumarinayso microprocessors-ka gees-goyn ama muraayadaha cadceedda, substrate-yadani waxay bixiyaan dabacsanaan iyo isku halaynta looga baahan yahay codsigaaga gaarka ah.
Semicera waxay u heellan tahay inay taageerto hal-abuurka iyo hufnaanta warshadaha semiconductor. Anagoo siinaya substrates silikoon tayo sare leh, waxaan awood u siineynaa soosaarayaasha inay riixaan xudduudaha tignoolajiyada, iyagoo gaarsiinaya alaabada buuxisa baahida suuqa. Ku kalsoonow Semicera jiilka soo socda xalalka elegtarooniga ah iyo sawirka Voltaic.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
