Silicon on Wafers InsulatorSemicera waxaa loogu talagalay in lagu daboolo baahida sii kordheysa ee xalalka semiconductor ee waxqabadka sare leh. Waferradayada SOI-ga waxay bixiyaan waxqabad koronto oo heersare ah iyo hoos u dhigidda awoodda qalabka dulin, taasoo ka dhigaysa inay ku habboon yihiin codsiyada horumarsan sida aaladaha MEMS, dareemayaasha, iyo wareegyada isku dhafan. Khibradda Semicera ee wax soo saarka waferka ayaa hubinaysa in mid walbaSOI waferwaxay ku siinaysaa natiijooyin la isku halayn karo, tayo sare leh oo loogu talagalay baahidaada tignoolajiyada jiilka soo socda.
OurSilicon on Wafers InsulatorBixi dheelitirka ugu fiican ee u dhexeeya waxtarka-wax-ku-oolnimada iyo waxqabadka. Iyada oo qiimaha waferka soi uu noqdo mid tartan sii kordhaya, waferradan ayaa si weyn loogu isticmaalaa warshado kala duwan, oo ay ku jiraan microelectronics iyo optoelectronics. Habka wax-soo-saarka saxda ah ee Semicera wuxuu dammaanad qaadayaa isku-xidhnaanta wafer-ka sare iyo isku-duubnida, taasoo ka dhigaysa inay ku habboon yihiin codsiyo kala duwan, laga bilaabo maraqyada SOI ee daloolka ilaa maraqa silikoon caadiga ah.
Astaamaha Muhiimka ah:
•Wafers SOI oo tayo sare leh ayaa loogu hagaajiyay waxqabadka MEMS iyo codsiyada kale.
•Qiimaha waferka soi ee tartanka ah ee ganacsiyada raadinaya xalal horumarsan iyada oo aan tayada wax u dhimayn.
•Ku habboon tignoolajiyada casriga ah, oo siinaya go'doomin koronto oo la xoojiyay iyo hufnaanta silikoon ee nidaamyada dahaadhka.
OurSilicon on Wafers Insulatorwaxaa loo farsameeyay si ay u bixiyaan xalal waxqabad sare leh, taageeraya mawjada soo socota ee hal-abuurka ee tignoolajiyada semiconductor. Haddii aad ka shaqaynayso daloolWafers SOI, Aaladaha MEMS, ama silikoon ee qaybaha dahaadhka, Semicera waxay soo bandhigtaa wafers oo buuxiya heerarka ugu sarreeya ee warshadaha.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |