Silicon On Insulator Wafer

Sharaxaad Gaaban:

Semicera's Silicon On Insulator (SOI) Wafer wuxuu bixiyaa go'doomin koronto oo gaar ah iyo maamulka kulaylka codsiyada waxqabadka sare leh. Injineerka si loo bixiyo hufnaanta aaladda sare iyo isku halaynta, waferradan ayaa ah doorashada koowaad ee tignoolajiyada sare ee semiconductor. Dooro Semicera xalalka wafer-ka SOI.


Faahfaahinta Alaabta

Tags Product

Semicera's Silicon On Insulator (SOI) Wafer wuxuu safka hore kaga jiraa hal-abuurnimada semiconductor, oo bixisa go'doomin koronto oo la xoojiyay iyo waxqabadka kulaylka sare. Qaab dhismeedka SOI, oo ka kooban lakab silikoon dhuuban oo ku yaal substrate dahaarka, wuxuu bixiyaa faa'iidooyin muhiim u ah aaladaha elektiroonigga ah ee waxqabadka sarreeya.

Wafers-yadayada SOI waxaa loogu talagalay in lagu yareeyo awoodda dulinka iyo qulqulka qulqulaya, taas oo lagama maarmaan u ah horumarinta wareegyada isku dhafan ee xawaaraha sarreeya iyo kuwa hooseeya. Tignoolajiyadan horumarsan waxay hubisaa in aaladaha ay si hufan u shaqeeyaan, iyadoo xawaaraha la hagaajiyay iyo isticmaalka tamarta oo yaraatay, oo muhiim u ah elektiroonigga casriga ah.

Nidaamyada wax-soo-saarka horumarsan ee ay shaqaalayso Semicera waxay dammaanad qaadayaan soo saarista waferrada SOI oo leh labis heersare ah iyo joogtayn. Tayadani waxay muhiim u tahay codsiyada isgaarsiinta, baabuurta, iyo elektiroonigga macaamiisha, halkaasoo loo baahan yahay qaybo la isku halayn karo oo waxqabad sare leh.

Marka lagu daro faa'iidooyinka korantada, waferrada Semicera's SOI waxay bixiyaan dahaarka kulaylka sare, kor u qaadista kuleylka iyo xasilloonida aaladaha cufnaanta sare iyo awoodda sare leh. Habkani wuxuu si gaar ah qiimo ugu leeyahay codsiyada ku lug leh soo saarista kulaylka muhiimka ah una baahan maaraynta kulaylka waxtarka leh.

Adigoo dooranaya Semicera's Silicon On Insulator Wafer, waxaad maal gashataa alaab taageerta horumarinta tignoolajiyada casriga ah. Ballanqaadkayaga tayada iyo ikhtiraacida waxay hubisaa in waferradayada SOI ay buuxiyaan baahiyaha adag ee warshadaha semiconductor ee maanta, iyadoo siinaya aasaaska aaladaha elektiroonigga ah ee soo socda.

Walxaha

Wax soo saar

Cilmi baaris

nacasnimo

Qiyaasta Crystal

Noocyo badan

4H

Khaladka jihaynta dusha sare

<11-20>4±0.15°

Qiyaasta Korontada

Dopant

n-nooca Nitrogen

iska caabin

0.015-0.025ohm · cm

Halbeegyada Makaanikada

Dhexroorka

150.0 ± 0.2mm

Dhumucda

350± 25 μm

Hanuuninta fidsan ee aasaasiga ah

[1-100]±5°

Dhererka siman ee aasaasiga ah

47.5 ± 1.5mm

Dabaqa labaad

Midna

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Qaansada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Wajiga hore (Si-wejiga) qallafsanaanta (AFM)

Ra≤0.2nm (5μm*5μm)

Qaab dhismeedka

Cufnaanta tuubbada yar

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Wasakhda birta

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tayada hore

Hore

Si

Dhammaadka dusha sare

Si-wejiga CMP

Qaybaha

≤60ea/wafer (xajmiga≥0.3μm)

NA

xoqid

≤5ea/mm Dhererka isugeynta ≤ Dhexroorka

Dhererka isugeynta≤2* Dhexroor

NA

Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga

Midna

NA

Chips-ka-geeska/indents/jabka/taargada hex

Midna

Aagagga nooca badan

Midna

Aagga isugeynta≤20%

Aagga isugeynta≤30%

Calaamadaynta laysarka hore

Midna

Tayada dambe

Dhammaadka dhabarka

C-waji CMP

xoqid

≤5ea/mm, Dhererka isugeynta≤2* Dhexroor

NA

Cilladaha dhabarka (dhab-jeexyada geesaha)

Midna

Dhabar xumada

Ra≤0.2nm (5μm*5μm)

Calaamadaynta laser-ka dambe

1 mm (laga bilaabo cidhifka sare)

Cidhif

Cidhif

Chamfer

Baakadaha

Baakadaha

Epi-diyaar ah oo leh baakad vacuum ah

Baakadaha cajaladaha wafer-ka badan

* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD.

tech_1_2_cabbir
SiC wafers

  • Kii hore:
  • Xiga: