Semicera's Silicon On Insulator (SOI) Wafer wuxuu safka hore kaga jiraa hal-abuurnimada semiconductor, oo bixisa go'doomin koronto oo la xoojiyay iyo waxqabadka kulaylka sare. Qaab dhismeedka SOI, oo ka kooban lakab silikoon dhuuban oo ku yaal substrate dahaarka, wuxuu bixiyaa faa'iidooyin muhiim u ah aaladaha elektiroonigga ah ee waxqabadka sarreeya.
Wafers-yadayada SOI waxaa loogu talagalay in lagu yareeyo awoodda dulinka iyo qulqulka qulqulaya, taas oo lagama maarmaan u ah horumarinta wareegyada isku dhafan ee xawaaraha sarreeya iyo kuwa hooseeya. Tignoolajiyadan horumarsan waxay hubisaa in aaladaha ay si hufan u shaqeeyaan, iyadoo xawaaraha la hagaajiyay iyo isticmaalka tamarta oo yaraatay, oo muhiim u ah elektiroonigga casriga ah.
Nidaamyada wax-soo-saarka horumarsan ee ay shaqaalayso Semicera waxay dammaanad qaadaysaa soo saarista waferrada SOI oo leh labbis heersare ah iyo joogtayn. Tayadani waxay muhiim u tahay codsiyada isgaarsiinta, baabuurta, iyo elektiroonigga macaamiisha, halkaasoo loo baahan yahay qaybo la isku halayn karo oo waxqabad sare leh.
Marka lagu daro faa'iidooyinka korantada, waferrada Semicera's SOI waxay bixiyaan dahaarka kulaylka sare, kor u qaadista kuleylka iyo xasilloonida aaladaha cufnaanta sare iyo awoodda sare leh. Habkani wuxuu si gaar ah qiimo ugu leeyahay codsiyada ku lug leh soo saarista kulaylka muhiimka ah una baahan maaraynta kulaylka waxtarka leh.
Adigoo dooranaya Semicera's Silicon On Insulator Wafer, waxaad maal gashataa alaab taageerta horumarinta tignoolajiyada casriga ah. Ballanqaadkayaga tayada iyo ikhtiraacida waxay hubisaa in waferradayada SOI ay buuxiyaan baahiyaha adag ee warshadaha semiconductor ee maanta, iyagoo siinaya aasaaska aaladaha elektiroonigga ah ee soo socda.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
