Substrate-ka Semicera's Silicon Nitride Ceramic Substrate wuxuu matalaa meesha ugu sarreysa ee tignoolajiyada walaxda horumarsan, taasoo bixisa kuleyl gaar ah iyo sifooyin farsamo oo adag. Loogu talagalay codsiyada waxqabadka sare leh, substrate-kani wuxuu aad uga sarreeyaa bay'ada u baahan maaraynta kulaylka la isku halayn karo iyo daacadnimada qaabdhismeedka.
Substratesyadayada Silicon Nitride Ceramic Substrates waxaa loogu talagalay inay u adkeystaan heerkulka aadka u daran iyo xaaladaha adag, iyaga oo ka dhigaya kuwo ku habboon aaladaha elegtarooniga ah ee awoodda sare leh iyo kuwa soo noqnoqda. Dhaqdhaqaaqooda kuleylkooda sare waxay xaqiijisaa daadinta kulaylka hufan, taas oo muhiim u ah ilaalinta waxqabadka iyo muddada dheer ee qaybaha elektiroonigga ah.
Ballanqaadka Semicera ee tayada ayaa ka muuqda Substrate kasta oo Silicon Nitride Ceramic Substrate ah oo aan soo saarno. Substrate kasta waxaa lagu soo saaray iyadoo la adeegsanayo habab casri ah si loo hubiyo waxqabadka joogtada ah iyo cilladaha ugu yar. Saxnimadan sare waxay taageertaa baahida adag ee warshadaha sida baabuurta, hawada hawada, iyo isgaarsiinta.
Marka lagu daro faa'iidooyinka kulaylka iyo farsamada, substratesyadayadu waxay bixiyaan sifooyin koronto oo heer sare ah, taas oo gacan ka geysaneysa isku halaynta guud ee qalabkaaga elektiroonigga ah. Iyada oo la dhimayo faragelinta korantada iyo kor u qaadida xasiloonida qaybta, Substrates Ceramic Semicera's Silicon Nitride waxay door muhiim ah ka ciyaaraan tayaynta waxqabadka aaladda.
Doorashada Semicera's Silicon Nitride Ceramic Substrate waxay la macno tahay maalgelinta badeecada keenta waxqabad sare iyo adkeysi labadaba. Substrate-yadayada waxa loo habeeyey si ay u daboolaan baahiyaha codsiyada elektarooniga ah ee horumarsan, iyada oo la hubinayo in qalabkaagu ka faa'iidaysto tignoolajiyada wax jeexan iyo isku halaynta khaaska ah.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
