Silikoon nitride ku xidhan silikoon carbide
Si3N4 waxay ku xidhan tahay walxaha dib-u-celinta dhoobada ee SiC, waxaa lagu qasi jiray budo wanaagsan oo saafi ah oo SIC ah iyo budada Silicon, ka dib koorsada shubka, falcelinta ayaa hoos u dhacday 1400 ~ 1500 ° C. Inta lagu jiro koorsada sintering, buuxinta Nitrogen-ka saafiga ah ee sare ee foornada, ka dibna silikoonku wuxuu ka falcelin doonaa Nitrojiinka wuxuuna dhalin doonaa Si3N4, Markaa Si3N4 oo isku xidhan SiC waxay ka kooban tahay silicon nitride (23%) iyo silicon carbide (75%) oo ah alaabta ceeriin ee ugu weyn. , lagu qaso walxo organic, oo lagu qaabeeyey isku dar ah, extrusion ama shubid, ka dibna la sameeyey ka dib qalajinta iyo nitrogenization.
Tilmaamaha iyo faa'iidooyinka:
1.Hdulqaadka heerkulka hooseeya
2.High kulaylka iyo caabbinta shoogga
3.Awoodda farsamada sare iyo iska caabbinta abrasion
4.Excellent tamarta tamarta iyo iska caabinta daxalka
Waxaan bixinaa tayo sare leh oo sax ah mashiinada NSiC qaybaha dhoobada kaas oo ka shaqeeya by
1.Slip tuurid
2.Baxdin
3.Uni Axial Pressing
4.Isostatic Pressing
Xaashida Xogta Agabka
| > Halabuurka Kiimikada | Sida | 75% |
| Si3N4 | ≥23% | |
| Si bilaash ah | 0% | |
| Cufnaanta weyn (g/cm3) | 2.70～2.80 | |
| Borosity muuqda (%) | 12～15 | |
| Laaci xoogga 20 ℃ (MPa) | 180～190 | |
| Laaci xoogga 1200 ℃ (MPa) | 207 | |
| Laaci xoogga 1350 ℃ (MPa) | 210 | |
| Awood cadaadis leh oo ah 20 ℃ (MPa) | 580 | |
| Heerarka kulaylka ee 1200 ℃(w/mk) | 19.6 | |
| Isku xidhka fidinta kulaylka at1200 ℃(x 10-6/C) | 4.70 | |
| Iska caabbinta shoogga kulaylka | Aad u fiican | |
| Max. heerkulka (℃) | 1600 | |
