Dulmarka alaabta
TheSilicon-Impregnated Silicon Carbide (SiC) Paddle iyo Wafer Carrierwaxaa loo habeeyay si uu u buuxiyo shuruudaha u baahan ee codsiyada habaynta kulaylka semiconductor. Waxaa laga sameeyay SiC nadiif ah oo lagu wanaajiyay iyada oo loo marayo impregnation silikoon, badeecadan waxay bixisaa isku darka u gaarka ah ee waxqabadka heerkulka sare, kulaylka aad u fiican, iska caabinta daxalka, iyo xoog farsamo oo heersare ah.
Marka la isku daro sayniska shay ee horumarsan iyo wax soo saarka saxda ah, xalkani wuxuu hubinayaa waxqabadka sare, isku halaynta, iyo adkeysiga soosaarayaasha semiconductor.
Tilmaamaha Muhiimka ah
1.Caabbinta Heerkulka Sare ee Gaarka ah
Iyada oo barta dhalaalaysa ay ka sarreyso 2700°C, agabka SiC ayaa si dabiici ah u deggan kulayl aad u daran. Silicon impregnation waxay sii kordhisaa xasilloonida kulaylka, taas oo u oggolaanaysa inay u adkeystaan soo-gaadhista dheer ee heerkulka sare iyada oo aan la wiiqin qaabdhismeedka ama hoos u dhaca waxqabadka.
2.Habdhaqanka Kulaylka Sare
Dhaqdhaqaaqa kulaylka gaarka ah ee SiC-da silikoon-impregnated waxay hubisaa qaybinta kulaylka isku midka ah, yaraynta diiqada kulaylka inta lagu jiro marxaladaha habaynta muhiimka ah. Hantidani waxay dheeraynaysaa cimriga qalabka waxayna yaraynaysaa wakhtiga wax soo saarka, taas oo ka dhigaysa mid ku habboon habaynta kulaylka sare.
3.Oxidation iyo iska caabin daxalka
Lakabka silikoon oksaydh ee adag ayaa si dabiici ah ugu samaysma dusha sare, kaas oo siinaya iska caabin heersare ah oo ka dhan ah oksaydhka iyo daxalka. Tani waxay hubinaysaa isku halaynta muddada dheer ee jawiga qallafsan ee qallafsan, ilaalinta labadaba walxaha iyo qaybaha ku hareeraysan.
4.Xoog Makaaniko Sare iyo Iska caabin Xiro
Silicon-impregnated SiC waxay leedahay awood cadaadis aad u fiican waxayna xidhataa iska caabin, iyadoo ilaalinaysa hufnaanteeda qaabdhismeed iyada oo culayskeedu sarreeyo, xaaladaha heerkulka sare. Tani waxay yaraynaysaa halista dhaawaca xidhashada, iyada oo hubinaysa waxqabadka joogtada ah ee wareegyada isticmaalka dheeraadka ah.
Tilmaamaha
| Magaca Alaabta | SC-RSiC-Si |
| Qalab | Silicon Impregnation Compact Silicon Carbide Compact (nadiif sare) |
| Codsiyada | Qaybaha Daawaynta Kulaylka Semiconductor, Qaybaha Qalab Soo Saarka Semiconductor |
| Foomka keenista | Jidh qaabaysan (jidh isku xidhan) |
| Halabuurka | Hantida Makaanikada | Modulka Da'da yar (GPa) | Xoog Laabashada (MPa) | ||
| Halabuurka (vol%) | α-SiC | α-SiC | RT | 370 | 250 |
| 82 | 18 | 800°C | 360 | 220 | |
| Cufnaanta Weyn (kg/m³) | 3.02 x 103 | 1200°C | 340 | 220 | |
| Heerkulka Heerkulka ° C | 1350 | Saamiga Poisson | 0.18 (RT) | ||
| Hantida kulaylka | Habdhaqanka kulaylka (W/ (m· K)) | Awoodda kulaylka ee gaarka ah (kJ/ (kg·K)) | Isku-dhafka Balaadhinta kulaylka (1/K) | ||
| RT | 220 | 0.7 | RT~700°C | 3.4 x 10-6 | |
| 700°C | 60 | 1.23 | 700 ~ 1200 ° C | 4.3 x10-6 | |
| Waxyaabaha wasakhaysan ((ppm) | |||||||||||||
| Curiyaha | Fe | Ni | Na | K | Mg | Ca | Cr | Mn | Zn | Cu | Ti | Va | Ai |
| Heerka nuxurka | 3 | <2 | <0.5 | <0.1 | <1 | 5 | 0.3 | <0.1 | <0.1 | <0.1 | <0.3 | <0.3 | 25 |
Codsiyada
▪Habaynta kulaylka ee Semiconductor:Ku habboon hababka sida kaydinta uumiga kiimikada (CVD), korriinka epitaxial, iyo annealing, halkaas oo xakamaynta heerkulka saxda ah iyo adkeysiga walxaha ay muhiim u yihiin.
▪Wafer Carriers & Paddles:Naqshadeeyay in si sugan loo xajiyo oo loo raro maraqa yar yar inta lagu jiro daawaynta kulaylka sareeyo.
▪Deegaannada Hawlgallada ee aadka u daran: Ku habboon goobaha u baahan caabbinta kulaylka, soo-gaadhista kiimikada, iyo walbahaarka farsamada.
Faa'iidooyinka Silicon-Impregnated SiC
Isku darka carbide silikoon nadiif ah oo nadiif ah iyo tignoolajiyada horumarsan ee impregnation silikoon ayaa bixiya faa'iidooyin waxqabad oo aan la barbar dhigi karin:
▪Saxnaanta:Waxay xoojisaa saxnaanta iyo xakamaynta farsamaynta semiconductor.
▪XasilooniWaxay u adkaysataa bay'ada adag iyadoon wax u dhimayn shaqeynta.
▪Cimri dheerWaxay kordhisaa nolosha adeegga qalabka wax soo saarka semiconductor.
▪Waxtarka:Waxay horumarisaa wax soo saarka iyadoo hubinaysa natiijooyin la isku halayn karo oo joogto ah.
Waa maxay sababta aan u dooranayno SiC Solutions-ka-Imi-garashada?
At Semicera, Waxaan ku takhasusay bixinta xalal-waxqabad sare leh oo ku habboon baahiyaha soosaarayaasha semiconductor. Silicon-Impregnated Silicon Carbide Paddle iyo Wafer Carrier waxay marayaan tijaabin adag iyo hubinta tayada si ay ula kulmaan heerarka warshadaha. Markaad doorato Semicera, waxaad helaysaa agab-goyn loogu talagalay in lagu wanaajiyo hababka wax-soo-saarkaaga oo kor loogu qaado awoodahaaga wax-soo-saarka.
Tilmaamaha Farsamada
▪Qalabaynta Maaddada:Silikoon carbide nadiif ah oo nadiif ah oo leh silikoon impregnation.
▪Xaddiga Heerkulka ee shaqaynaya:Ilaa 2700°C.
▪ Habdhaqanka Kulaylka:Si gaar ah u sarreeya qaybinta kulaylka isku midka ah.
▪Guryaha iska caabinta:Oxidation, daxalka, iyo xirashada u adkaysata.
▪Codsiyada:La jaanqaadi kara hababka habaynta kulaylka ee semiconductor ee kala duwan.
Nala Soo Xidhiidh
Diyaar ma u tahay inaad sare u qaaddo habka wax soo saarka semiconductor? XiriirSemiceramaanta si aad wax badan uga barato Silicon-Ipregnated Silicon Carbide Paddle iyo Wafer Carrier.
▪Iimayl: sales01@semi-cera.com/sales05@semi-cera.com
▪Taleefanka: + 86-0574-8650 3783
▪Goobta:No.1958 Jiangnan Road, Ningbo Farsamada Sare, Aagga, Gobolka Zhejiang, 315201, Shiinaha
