Sharaxaada
Shirkaddayadu waxay bixisaaDahaarka SiChabsocodka adeegyada habka CVD ee dusha sare ee garaafka, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo silikoon ay uga falceliyaan heerkul sare si ay u helaan molecules SiC nadiif ah oo sarreeya, molecules lagu kaydiyo dusha sare eedahaarka lehalaabta, samaynta lakabka ilaalinta SIC.
Sifooyinka madaxa qubeyska ee SiC waa sida soo socota:
1. Iska caabinta daxalka: Qalabka SiC wuxuu leeyahay iska caabin aad u fiican oo u adkeysan kara nabaad-guurka dareeraha kiimikada kala duwan iyo xalalka, waxayna ku habboon tahay noocyo kala duwan oo kiimiko ah iyo hababka daaweynta dusha sare.
2. Dejinta heerkulka sare:SiC nozzleswaxay ilaalin kartaa xasilloonida qaabdhismeedka jawiga heerkulka sare waxayna ku habboon yihiin codsiyada u baahan daaweynta heerkulka sare.
3. Buufin lebbisan:SiC nozzlenaqshadeynta waxay leedahay waxqabadka xakamaynta buufinta wanaagsan, kaas oo gaari kara qaybinta dareeraha isku midka ah iyo in la hubiyo in dareeraha daaweynta si siman loo daboolo dusha bartilmaameedka.
4. Dharka sare ee caabbinta: Qalabka SiC wuxuu leeyahay qallafsanaan sare iyo xirashada caabbinta waxayna u adkeysan kartaa isticmaalka muddada dheer iyo khilaafka.
Madaxa qubayska SiC waxaa si weyn loogu isticmaalaa hababka daaweynta dareeraha ee wax soo saarka semiconductor, farsamaynta kiimikada, daahan dusha sare, electroplating iyo beeraha kale ee warshadaha. Waxay ku siin kartaa xasilloon, lebis iyo saamaynta buufin lagu kalsoonaan karo si loo hubiyo tayada iyo joogtaynta ka baaraandegidda iyo daaweynta.
Tilmaamaha ugu muhiimsan
1. Iska caabbinta oksaydhka heerkulka sare:
caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku uu gaadho 1600 C.
2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalada koloriinaynta heerkulka sare.
3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.
4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC
| Guryaha SiC-CVD | ||
| Dhismaha Crystal | FCC β wejiga | |
| Cufnaanta | g/cm³ | 3.21 |
| Adag | Vickers adag | 2500 |
| Cabirka Hadhuudhka | μm | 2 ~ 10 |
| Nadiifnimada Kiimikada | % | 99.99995 |
| Awoodda kulaylka | J·k-1 ·K-1 | 640 |
| Heerkulka Sublimation | ℃ | 2700 |
| Xoogga Felexural | MPa (RT 4-dhibcood) | 415 |
| Dhallinta Modul | Gpa (4pt laab, 1300 ℃) | 430 |
| Balaadhinta kulaylka (CTE) | 10-6K-1 | 4.5 |
| Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
