Silicon carbide waa nooc ka mid ah carbide synthetic oo leh molecule SiC. Marka la tamarsiiyo, silica iyo kaarboon waxaa badanaa lagu sameeyaa heerkul sare oo ka sarreeya 2000 ° C. Silikon carbide waxa uu leeyahay cufnaanta aragtiyeed ee 3.18g/cm3, a engegnaanta Mohs ee raacaya dheeman, iyo microhardness 3300kg/mm3 inta u dhaxaysa 9.2 iyo 9.8. Sababtoo ah adkeysigeeda sare iyo caabbinta sare ee xirashada, waxay leedahay sifooyinka caabbinta heerkulka sare waxaana loo isticmaalaa noocyo kala duwan oo dhar ah oo u adkaysta, daxalka u adkaysta iyo heerkulka sare ee qalabka farsamada. Waa nooc cusub oo tignoolajiyada dhoobada adkaysiga u leh.
1. Waxyaabaha kiimikada
(1) Iska caabbinta oksaydhisku: Marka walxaha silikoon carbide lagu kululeeyo 1300 ° C hawada, lakabka ilaalinta silikoon dioxide wuxuu bilaabaa inuu ka soo baxo dusha sare ee crystal carbide silikoon. Iyada oo dhumucda lakabka ilaalinta, carbid silikoon gudaha ah ayaa sii wadi doonta oxidize, si ay silikoon carbide u leedahay iska caabin oksaydh oo wanaagsan. Marka heerkulku gaaro in ka badan 1900K (1627 ° C), filimka ilaalinta silikoon dioxide wuxuu bilaabaa inuu dhaawaco, iyo oksaydhka silikoon carbide waa la xoojiyaa, markaa 1900K waa heerkulka shaqada ee carbide silicon ee jawi oksaydh ah.
(2) Acid iyo alkali caabbinta: sababtoo ah doorka filimka ilaalinta silikoon dioxide, silikoon carbide wuxuu leeyahay sifooyin doorka filimka ilaalinta silicon dioxide.
2. Qalabka jirka iyo farsamada.
(1) Cufnaanta: Cufnaanta walxaha kala duwan ee kiristaalo silikoon carbide waa mid aad u dhow, guud ahaan loo tixgeliyo inay yihiin 3.20g / mm3, iyo cufnaanta baakadaha dabiiciga ah ee silikoon carbide abrasives waa inta u dhaxaysa 1.2-1.6g / mm3, taas oo ku xidhan cabbirka qayb, Halabuurka cabbirka walxaha iyo qaabka cabbirka qaybta.
2 boron nitride iyo boron carbide.
(3) Daawaynta kulaylka: Alaabooyinka silikoon carbide waxay leeyihiin kuleyl heer sare ah, iskudhafan fidinta kulaylka yar, caabbinta shoogga kulaylka sare, waana agab tayo sare leh.
3. Guryaha Korontada.
| Shayga | Unug | Xogta | Xogta | Xogta | Xogta | Xogta |
| RBsic (sic) | NBSiC | SSiC | RSiC | OSiC | ||
| Nuxurka SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Waxa ku jira silikoon bilaash ah | % | 15 | 0 | 0 | 0 | 0 |
| Heerkulka adeegga ugu sarreeya | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Cufnaanta | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Bannaanka furan | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Xoog laabashada 20℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Xoog laabashada 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Heerarka kulaylka 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| Isku-dhafka kuleylka kuleylka | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
