Semicera'sSilicon Carbide Epitaxywaxaa loo habeeyay si uu u daboolo baahida adag ee codsiyada semiconductor-ka casriga ah. Anagoo adeegsanayna farsamooyinka koritaanka epitaxial ee horumarsan, waxaan hubineynaa in lakabka carbide silicon kasta uu muujiyo tayada kristalin gaar ah, lebis, iyo cufnaanta cilladda ugu yar. Tilmaamahani waxay muhiim u yihiin horumarinta qalabka elektaroonigga ah ee waxqabadka sare leh, halkaasoo waxtarka iyo maareynta kulaylku ay muhiim u yihiin.
TheSilicon Carbide Epitaxyhabka Semicera waxaa loo habeeyay si loo soo saaro lakabyo epitaxial leh dhumuc gaar ah iyo xakameyn doping, hubinta waxqabadka joogtada ah ee qalabka kala duwan. Heerkan saxda ah ayaa lagama maarmaan u ah codsiyada gawaarida korontada, nidaamyada tamarta la cusboonaysiin karo, iyo isgaarsiinta soo noqnoqda, halkaasoo isku halaynta iyo hufnaanta ay muhiim u yihiin.
Intaa waxaa dheer, Semicera'sSilicon Carbide Epitaxywaxay bixisaa korantada kulaylka oo la xoojiyey iyo koronto burbursan oo sarreeya, taasoo ka dhigaysa doorashada la doorbido ee aaladaha ku shaqeeya xaaladaha daran. Guryahaani waxay gacan ka geystaan cimriga aaladda oo sii dheeraato waxayna wanaajisay hufnaanta guud ee nidaamka, gaar ahaan meelaha tamarta sare leh iyo heerkulka sare.
Semicera sidoo kale waxay bixisaa ikhtiyaar u habeyntaSilicon Carbide Epitaxy, u oggolaanaya xalal ku habboon oo buuxiya shuruudaha qalabka gaarka ah. Hadday tahay cilmi-baadhis ama wax-soo-saar ballaadhan, lakabyadayada epitaxial-ka waxaa loogu talagalay inay taageeraan jiilka soo socda ee hal-abuurka semiconductor, awood u siinaya horumarinta qalab elektaroonig ah oo awood badan, hufan, oo la isku halleyn karo.
Marka la isku daro tignoolajiyada casriga ah iyo hababka xakamaynta tayada adag, Semicera waxay hubisaa in ourSilicon Carbide EpitaxyAlaabtu kaliya kuma koobna ee waxay dhaaftay heerarka warshadaha. Ballanqaadkan heer sare ah wuxuu ka dhigayaa lakabyadayada epitaxial aasaaska ugu habboon ee codsiyada semiconductor-ka horumarsan, taasoo u gogol xaareysa horumarrada laga gaarayo korantada korantada iyo optoelectronics.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |