Qalabka Garaafyada Dahaarka leh ee Silicon Carbide, oo loogu talagalay Farshaxanka Epitaxy

Qalabka Garaafyada Dahaarka leh ee Silicon Carbide, ee Sawirka Farshaxanka Epitaxy

Sharaxaad Gaaban:

Semicera waxa ay soo bandhigtaa kala duwanaansho dhamaystiran oo ah suujiyeyaal iyo qaybo graphite ah oo loogu talagalay reactors epitaxy kala duwan.

Iyada oo loo marayo iskaashi istaraatiijiyadeed oo lala yeesho OEM-yada hormuudka u ah warshadaha, khibradda agabka ballaaran, iyo awoodaha wax soo saarka ee horumarsan, Semicera waxay soo bandhigtaa naqshado loo habeeyey si ay u buuxiso shuruudaha gaarka ah ee codsigaaga. Ballanqaadkayaga xagga sareynta waxay hubinaysaa inaad hesho xalalka ugu habboon baahiyahaaga fal-celinta epitaxy.

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Sharaxaada

Shirkadeena waxay bixisaa adeegyada habka daahan SiC ee habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan nadiifnimada sare ee SiC molecules, molecules deposited on the dusha alaabta dahaarka ah, samaynta lakabka ilaalinta SIC.

ku saabsan (1)

ku saabsan (2)

Tilmaamaha ugu muhiimsan

1. Nadiifinta sare ee SiC garaafyada dahaarka leh

2. Iska caabbinta kulaylka sare iyo isku midnimada kulaylka

3. SiC crystal Fine oo lagu dahaadhay dusha siman

4. Adkeysiga sare ee nadiifinta kiimikada

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

Guryaha SiC-CVD
Dhismaha Crystal	FCC β wejiga
Cufnaanta	g/cm³	3.21
Adag	Vickers adag	2500
Cabirka Hadhuudhka	μm	2 ~ 10
Nadiifnimada Kiimikada	%	99.99995
Awoodda kulaylka	J·k-1 ·K-1	640
Heerkulka Sublimation	℃	2700
Xoogga Felexural	MPa (RT 4-dhibcood)	415
Dhallinta Modul	Gpa (4pt laab, 1300 ℃)	430
Balaadhinta kulaylka (CTE)	10-6K-1	4.5
Dhaqdhaqaaqa kulaylka	(W/mK)	300