Substrate-ka loo yaqaan 'Substrate' ee Semicera waa qayb muhiim u ah soo saarista aaladaha semiconductor ee waxqabadka sarreeya. Waxa laga farsameeyay Silicon (Si), substrate-kani waxa uu bixiyaa lebis gaar ah, degenaansho, iyo firfircooni aad u wanaagsan, taas oo ka dhigaysa mid ku habboon codsiyo kala duwan oo horumarsan warshadaha semiconductor. Haddii loo isticmaalo Si Wafer, Substrate SiC, SOI Wafer, ama Soosaarka Substrate-ka SiN, Semicera Si Substrate wuxuu bixiyaa tayo joogto ah iyo waxqabad heersare ah si loo daboolo baahida sii kordheysa ee elektiroonigga casriga ah iyo sayniska agabka.
Waxqabad Aan La Barbar dhigin oo leh daahir Sare iyo Saxnimo
Semicera's Si Substrate waxaa la soo saaray iyadoo la adeegsanayo habab horumarsan oo hubinaya nadiif sare iyo kontoroolka cabbirka adag. Substrate-ku wuxuu u adeegaa sidii aasaaska soo saarista noocyo kala duwan oo agab wax qabad sare leh, oo ay ku jiraan Epi-Wafers iyo AlN Wafers. Saxnaanta iyo labisnaanta Si Substrate-ka ayaa ka dhigaya doorasho aad u fiican abuurista lakabyada epitaxial-filim khafiif ah iyo qaybaha kale ee muhiimka ah ee loo isticmaalo soo saarista jiilka soo socda ee semiconductors. Haddii aad la shaqaynayso Gallium Oxide (Ga2O3) ama walxo kale oo horumarsan, Semicera's Si Substrate waxay hubisaa heerarka ugu sarreeya ee isku halaynta iyo waxqabadka.
Codsiyada wax soo saarka Semiconductor
Warshadaha semiconductor-ka, Si Substrate-ka ee Semicera waxaa loo adeegsadaa codsiyo kala duwan, oo ay ku jiraan Si Wafer iyo SiC Substrate wax soo saarka, halkaas oo ay ku siiso saldhig xasiloon, oo la isku halayn karo ee dhigista lakabyada firfircoon. Substrate-ku wuxuu door muhiim ah ka ciyaaraa samaynta SOI Wafers (Silicon On Insulator), kuwaas oo lagama maarmaan u ah microelectronics horumarsan iyo wareegyada isku dhafan. Intaa waxaa dheer, Epi-Wafers (wafers epitaxial) oo lagu dhisay Si Substrates ayaa ka mid ah soo saarista aaladaha semiconductor-ka waxqabadka sare leh sida transistor-ka korantada, diodes, iyo wareegyada isku dhafan.
Si Substrate-ka waxa kale oo uu taageeraa soo saarista aaladaha isticmaalaya Gallium Oxide (Ga2O3), oo ah walxo baladhan oo baladhan oo loo isticmaalo codsiyada awooda sare leh ee korontada ku shaqeeya. Intaa waxaa dheer, waafaqid Semicera's Si Substrate oo leh AlN Wafers iyo substrates kale oo horumarsan waxay hubisaa inay buuxin karto shuruudaha kala duwan ee warshadaha teknolojiyadda sare, taasoo ka dhigaysa xalka ugu habboon soo saarista aaladaha cirifka leh ee isgaarsiinta, baabuurta, iyo qaybaha warshadaha. .
Lagu Kalsoon yahay oo Tayada Joogta ah ee Codsiyada Farsamada Sare
Substrate-ka ee Semicera waxaa si taxadar leh loo farsameeyay si uu u daboolo baahida adag ee soo saarista semiconductor. Sharafteeda qaabdhismeed ee gaarka ah iyo guryaha tayada sare leh ayaa ka dhigaya sheyga ugu habboon ee loo isticmaalo nidaamyada cajaladaha ee gaadiidka waferka, iyo sidoo kale abuurista lakabyo sax ah oo sax ah oo ku jira aaladaha semiconductor. Awoodda substrate-ka ee lagu ilaalinayo tayada joogtada ah ee xaaladaha nidaamka kala duwan waxay hubisaa cilladaha ugu yar, kor u qaadista wax-soo-saarka iyo waxqabadka badeecada ugu dambeysa.
Iyada oo kuleylkeeda sare ee kuleylka, xoogga farsamada, iyo nadiifnimada sare, Semicera's Si Substrate waa shayga doorashada ee soosaarayaasha raadinaya si ay u gaaraan heerarka ugu sarreeya ee saxda ah, isku halaynta, iyo waxqabadka wax soo saarka semiconductor.
Dooro Substrate-ka Semicera's Si loogu talagalay nadiif-sare, xalalka waxqabadka sare
Soosaarayaasha warshadaha semiconductor-ka, Substrate-ka Si Substrate-ka ee Semicera wuxuu bixiyaa xal tayo sare leh oo adag oo loogu talagalay codsiyo badan oo kala duwan, laga bilaabo soosaarka Si Wafer ilaa abuurista Epi-Wafers iyo SOI Wafers. Iyada oo nadiif ah, sax ah, iyo isku haleyn la'aan, substrate-kani wuxuu awood u siinayaa wax soo saarka qalabka semiconductor-ka-goynta, hubinta waxqabadka muddada-dheer iyo waxtarka ugu fiican. U dooro Semicera baahidaada Si substrate-ka, oo ku kalsoonow badeecada loo qaabeeyey si loo daboolo baahida tignoolajiyada berrito.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |