Semicerasoo bandhigaysa tayada sareSida Epitaxyadeegyada, loogu talagalay inay la kulmaan heerarka saxda ah ee warshadaha semiconductor maanta. Lakabyada Silikoon ee Epitaxial ayaa muhiim u ah waxqabadka iyo isku halaynta aaladaha elektiroonigga ah, iyo xalalkayaga Si Epitaxy waxay hubinayaan in qaybahaagu ay gaadhaan shaqayn wanaagsan.
Lakabyada Silikoon ee Koray ee Saxda ah Semicerafahamsan yahay in aasaaska aaladaha waxqabadka sare ay ku jiraan tayada agabka la isticmaalo. OurSida Epitaxynidaamka si taxadar leh ayaa loo xakameeyaa si loo soo saaro lakabyo silikoon leh lebbis gaar ah iyo daacadnimo crystal. Lakabyadani waxay lama huraan u yihiin codsiyada u dhexeeya microelectronics ilaa aaladaha awooda horumarsan, halkaas oo joogtaynta iyo isku halaynta ay muhiim tahay.
Lagu Habeeyay Waxqabadka AaladdaTheSida Epitaxyadeegyada ay bixiso Semicera waxaa loogu talagalay in lagu wanaajiyo sifooyinka korantada ee qalabkaaga. Anagoo koraya lakabyo silikoon nadiif ah oo leh cufnaanta cilladaha hooseeya, waxaan hubineynaa in qaybahaagu ay u qabtaan sida ugu fiican, iyadoo la wanaajiyay dhaqdhaqaaqa sideyaasha iyo la yareeyo iska caabbinta korantada. Hagaajintani waxay muhiim u tahay gaarista xawaaraha sare iyo sifooyinka waxtarka sare leh ee ay dalbato tignoolajiyada casriga ah.
Kala duwanaanshiyaha Codsiyada SemicerasSida Epitaxywuxuu ku habboon yahay codsiyo kala duwan, oo ay ku jiraan soo-saarka CMOS transistor-ka, MOSFET-yada awoodda, iyo transistors-ka laba-cirifoodka. Nidaamkayaga dabacsan wuxuu u oggolaanayaa in la beddelo iyadoo lagu saleynayo shuruudaha gaarka ah ee mashruucaaga, haddii aad u baahan tahay lakabyo khafiif ah oo loogu talagalay codsiyada soo noqnoqda sare ama lakabyada dhumuc weyn ee qalabka korontada.
Tayada Agabka SareTayadu waa udub dhexaadka wax kasta oo aan ku samayno Semicera. OurSida Epitaxynidaamku wuxuu isticmaalaa qalab casri ah iyo farsamooyin si loo hubiyo in lakab kasta oo silikon ah uu la kulmo heerarka ugu sarreeya ee nadiifnimada iyo sharafta qaabdhismeedka. Fiiro gaar ah u leh faahfaahinta waxay yaraynaysaa dhacdooyinka ciladaha saamayn kara waxqabadka aaladda, taasoo keenta qaybo la isku halayn karo oo dheer.
Ballanqaadka Hal-abuurka Semicerawaxaa ka go'an inuu ku sii jiro safka hore ee tignoolajiyada semiconductor. OurSida Epitaxyadeegyadu waxay ka tarjumayaan ballan-qaadkan, iyaga oo ku dara horumarkii ugu dambeeyay ee farsamooyinka koritaanka epitaxial. Waxaan si joogto ah u nadiifineynaa hababkayaga si aan u gaarsiino lakabyo silikoon oo buuxiya baahiyaha soo koraya ee warshadaha, anagoo hubinayna in alaabtaadu ay ku sii jiraan tartanka suuqa.
Xalka Ku-habboon ee BaahiyahaagaFahamka in mashruuc kastaa uu gaar yahay,Semicerawaxay bixisaa habaysanSida Epitaxyxalalka ku habboon baahiyahaaga gaarka ah. Haddii aad u baahan tahay muuqaalada doping-ka gaarka ah, dhumucda lakabka, ama dhammaystirka dusha sare, kooxdayadu waxay si dhow kula shaqeeyaan si ay u keenaan badeecad buuxisa shuruudahaaga saxda ah.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |