Sida Epitaxy

Sharaxaad Gaaban:

Sida Epitaxy- Ku gaadh waxqabadka aaladda sare ee Semicera's Si Epitaxy, adoo siinaya lakabyo silikoon oo koray oo sax ah codsiyada semiconductor sare.


Faahfaahinta Alaabta

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Semicerasoo bandhigaysa tayada sareSida Epitaxyadeegyada, loogu talagalay inay la kulmaan heerarka saxda ah ee warshadaha semiconductor maanta. Lakabyada Silikoon ee Epitaxial ayaa muhiim u ah waxqabadka iyo isku halaynta aaladaha elektiroonigga ah, iyo xalalkayaga Si Epitaxy waxay hubinayaan in qaybahaagu ay gaadhaan shaqayn wanaagsan.

Lakabyada Silikoon ee Koray ee Saxda ah Semicerafahamsan yahay in aasaaska aaladaha waxqabadka sare ay ku jiraan tayada agabka la isticmaalo. OurSida Epitaxynidaamka si taxadar leh ayaa loo xakameeyaa si loo soo saaro lakabyo silikoon leh lebbis gaar ah iyo daacadnimo crystal. Lakabyadani waxay lama huraan u yihiin codsiyada u dhexeeya microelectronics ilaa aaladaha awooda horumarsan, halkaas oo joogtaynta iyo isku halaynta ay muhiim tahay.

Lagu Habeeyay Waxqabadka AaladdaTheSida Epitaxyadeegyada ay bixiso Semicera waxaa loogu talagalay in lagu wanaajiyo sifooyinka korantada ee qalabkaaga. Anagoo koraya lakabyo silikoon nadiif ah oo leh cufnaanta cilladaha hooseeya, waxaan hubineynaa in qaybahaagu ay u qabtaan sida ugu fiican, iyadoo la wanaajiyay dhaqdhaqaaqa sideyaasha iyo la yareeyo iska caabbinta korantada. Hagaajintani waxay muhiim u tahay gaarista xawaaraha sare iyo sifooyinka waxtarka sare leh ee ay dalbato tignoolajiyada casriga ah.

Kala duwanaanshiyaha Codsiyada SemicerasSida Epitaxywuxuu ku habboon yahay codsiyo kala duwan, oo ay ku jiraan soo-saarka CMOS transistor-ka, MOSFET-yada awoodda, iyo transistors-ka laba-cirifoodka. Nidaamkayaga dabacsan wuxuu u oggolaanayaa in la beddelo iyadoo lagu saleynayo shuruudaha gaarka ah ee mashruucaaga, haddii aad u baahan tahay lakabyo khafiif ah oo loogu talagalay codsiyada soo noqnoqda sare ama lakabyada dhumuc weyn ee qalabka korontada.

Tayada Agabka SareTayadu waa udub dhexaadka wax kasta oo aan ku samayno Semicera. OurSida Epitaxynidaamku wuxuu isticmaalaa qalab casri ah iyo farsamooyin si loo hubiyo in lakab kasta oo silikon ah uu la kulmo heerarka ugu sarreeya ee nadiifnimada iyo sharafta qaabdhismeedka. Fiiro gaar ah u leh faahfaahinta waxay yaraynaysaa dhacdooyinka ciladaha saamayn kara waxqabadka aaladda, taasoo keenta qaybo la isku halayn karo oo dheer.

Ballanqaadka Hal-abuurka Semicerawaxaa ka go'an inuu ku sii jiro safka hore ee tignoolajiyada semiconductor. OurSida Epitaxyadeegyadu waxay ka tarjumayaan ballan-qaadkan, iyaga oo ku dara horumarkii ugu dambeeyay ee farsamooyinka koritaanka epitaxial. Waxaan si joogto ah u nadiifineynaa hababkayaga si aan u gaarsiino lakabyo silikoon oo buuxiya baahiyaha soo koraya ee warshadaha, anagoo hubinayna in alaabtaadu ay ku sii jiraan tartanka suuqa.

Xalka Ku-habboon ee BaahiyahaagaFahamka in mashruuc kastaa uu gaar yahay,Semicerawaxay bixisaa habaysanSida Epitaxyxalalka ku habboon baahiyahaaga gaarka ah. Haddii aad u baahan tahay muuqaalada doping-ka gaarka ah, dhumucda lakabka, ama dhammaystirka dusha sare, kooxdayadu waxay si dhow kula shaqeeyaan si ay u keenaan badeecad buuxisa shuruudahaaga saxda ah.

Walxaha

Wax soo saar

Cilmi baaris

nacasnimo

Qiyaasta Crystal

Noocyo badan

4H

Khaladka jihaynta dusha sare

<11-20>4±0.15°

Halbeegyada Korontada

Dopant

n-nooca Nitrogen

iska caabin

0.015-0.025ohm · cm

Halbeegyada Makaanikada

Dhexroorka

150.0 ± 0.2mm

Dhumucda

350± 25 μm

Hanuuninta fidsan ee aasaasiga ah

[1-100]±5°

Dhererka siman ee aasaasiga ah

47.5 ± 1.5mm

Dabaqa labaad

Midna

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Qaansada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Wajiga hore (Si-wejiga) qallafsanaanta (AFM)

Ra≤0.2nm (5μm*5μm)

Qaab dhismeedka

Cufnaanta tuubbada yar

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Wasakhda birta

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tayada hore

Hore

Si

Dhammaadka dusha sare

Si-wejiga CMP

Qaybaha

≤60ea/wafer (xajmiga≥0.3μm)

NA

xoqid

≤5ea/mm Dhererka isugeynta ≤ Dhexroorka

Dhererka isugeynta≤2* Dhexroor

NA

Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga

Midna

NA

Chips-ka-geeska/indents/jabka/taargada hex

Midna

Aagagga nooca badan

Midna

Aagga isugeynta≤20%

Aagga isugeynta≤30%

Calaamadaynta laysarka hore

Midna

Tayada dambe

Dhammaadka dhabarka

C-waji CMP

xoqid

≤5ea/mm, Dhererka isugeynta≤2* Dhexroor

NA

Cilladaha dhabarka (dhab-jeexyada geesaha)

Midna

Dhabar xumada

Ra≤0.2nm (5μm*5μm)

Calaamadaynta laser-ka dambe

1 mm (laga bilaabo cidhifka sare)

Cidhif

Cidhif

Chamfer

Baakadaha

Baakadaha

Epi-diyaar ah oo leh baakad vacuum ah

Baakadaha cajaladaha wafer-ka badan

* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD.

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