Semiconductor Silicon ku salaysan GaN epitaxy

Sharaxaad Gaaban:

Semicera Energy Technology Co., Ltd waa bixiye hormuud u ah ceramics semiconductor horumarsan iyo soo saaraha kaliya ee Shiinaha oo isku mar siin kara silikoon carbide dhoobada saafiga ah (gaar ahaan Recrystallized SiC) iyo CVD SiC daahan. Intaa waxaa dheer, shirkadeena waxay sidoo kale ka go'an tahay beeraha dhoobada sida alumina, aluminium nitride, zirconia, iyo nitride silicon, iwm.

 

Faahfaahinta Alaabta

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Silicon-based GaN epitaxy

Sharaxaada Alaabta

Shirkadeena waxay bixisaa adeegyada habka daahan SiC ee habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan nadiifnimada sare ee SiC molecules, molecules deposited on the dusha alaabta dahaarka ah, samaynta lakabka ilaalinta SIC.

Tilmaamaha ugu muhiimsan:

1. Iska caabbinta oksaydhka heerkulka sare:

caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku uu gaadho 1600 C.

2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalad koloriineed heerkul sare ah.

3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.

4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

Guryaha SiC-CVD

Dhismaha Crystal

FCC β wejiga

Cufnaanta

g/cm³

3.21

Adag

Vickers adag

2500

Cabirka Hadhuudhka

μm

2 ~ 10

Nadiifnimada Kiimikada

%

99.99995

Awoodda kulaylka

J·k-1 ·K-1

640

Heerkulka Sublimation

2700

Xoogga Felexural

MPa (RT 4-dhibcood)

415

Dhallinta Modul

Gpa (4pt laab, 1300 ℃)

430

Balaadhinta kulaylka (CTE)

10-6K-1

4.5

Dhaqdhaqaaqa kulaylka

(W/mK)

300

Goobta shaqada ee Semicera
Goobta shaqada ee Semicera 2
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Habaynta CNN, nadiifinta kiimikada, daahan CVD
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