CVD Bulk Silicon Carbide (SiC)
Dulmar:CVDSilicon carbide (SiC)waa shay aad looga raadsado qalabka etching plasma, codsiyada kuleyliyaha degdega ah (RTP), iyo hababka kale ee wax soo saarka semiconductor. Mashiinkeeda gaarka ah, kiimikooyinka, iyo guryaha kulaylka ayaa ka dhigaya wax ku habboon codsiyada tignoolajiyada horumarsan ee u baahan saxnaanta sare iyo cimri dhererka.
Codsiyada CVD Bulk SiC:Bulk SiC ayaa muhiim u ah warshadaha semiconductor, gaar ahaan nidaamka etching plasma, halkaas oo qaybaha ay ka mid yihiin giraangiraha diirada, madaxyada gaaska, giraangiraha cidhifka, iyo platens ay ka faa'iidaystaan iska caabinta daxalka ee SiC iyo dhaqdhaqaaqa kulaylka. Adeegsigeedu wuxuu gaaraa ilaaRTPnidaamyada sababtoo ah awoodda SiC ee u adkeysiga heerkulka degdega ah iyada oo aan hoos u dhicin.
Marka lagu daro qalabka xoqidda, CVDbadan SiCwaxaa lagu jecel yahay foornooyinka faafinta iyo hababka koritaanka crystal, halkaas oo xasilloonida kulaylka sare iyo caabbinta deegaanka kiimikada adag loo baahan yahay. Sifooyinkan ayaa SiC ka dhigaya sheyga doorashada ee codsiyada baahida sare leh ee ku lug leh heerkul sare iyo gaasas wasakhaysan, sida kuwa ay ku jiraan koloriin iyo fluorine.
Faa'iidooyinka CVD Bulk SiC Qaybaha:
•Cufnaanta Sare:Cufnaanta 3.2 g/cm³,CVD tirada badan ee SiCQeybaha ayaa aad ugu adkeysanaya xirashada iyo saameynta farsamada.
•Habdhaqanka Kulaylka Sare:Bixinta dhaqdhaqaaqa kulaylka ee 300 W/m·K, bulk SiC waxay si hufan u maamushaa kulaylka, taasoo ka dhigaysa mid ku habboon qaybaha soo gaadhay wareegyada kulaylka aadka u daran.
•Caabbinta Kiimikada Gaarka ah:Falcelinta hoose ee SiC ee leh gaaska etching, oo ay ku jiraan koloriin iyo kiimikooyinka fluorine-ku-salaysan, waxay hubisaa nolosha qaybaha dheeraadka ah.
•Iska caabin la hagaajin karo: CVD bulk SiC'siska caabin ah waxaa lagu habeyn karaa inta u dhexeysa 10⁻²–10⁴ Ω-cm, taasoo ka dhigaysa mid la qabsan karta baahida wax soo saarka semiconductor.
•Isku xidhka Balaadhinta kulaylka:Iyada oo isku xidhka balaadhinta kulaylka ee 4.8 x 10⁻⁶/°C (25–1000°C), CVD bulk SiC waxay ka hortagtaa shoogga kulaylka, ilaalinaysa xasilloonida cabbirka xitaa inta lagu jiro wareegyada kululaynta iyo qaboojinta degdegga ah.
•Waarta Plasma:Soo-gaadhista balaasmaha iyo gaasaska fal-celiska ah waa lama huraan marka la eego hababka semiconductor, laakiinCVD tirada badan ee SiCwaxay siisaa iska caabin heersare ah oo ka dhan ah daxalka iyo hoos u dhaca, yaraynta soo noqnoqda beddelka iyo kharashka dayactirka guud.
Tilmaamaha Farsamada:
•Dhexroor:In ka badan 305 mm
•iska caabinLagu hagaajin karo gudaha 10⁻²–10⁴ Ω-cm
•Cufnaanta:3.2 g/cm³
•Habdhaqanka Kulaylka:300 W/m·K
•Isku xidhka Balaadhinta kulaylka:4.8 x 10⁻⁶/°C (25-1000°C)
Habaynta iyo dabacsanaanta:MarkaSemiconductor SemiceraWaxaan fahamsanahay in codsi kasta oo semiconductor uu u baahan karo tilmaamo kala duwan. Taasi waa sababta qaybahayada CVD ee tirada badan ee SiC si buuxda loo habeyn karo, oo leh iska caabin la hagaajin karo iyo cabbirro habeysan oo ku habboon baahiyahaaga qalabka. Haddi aad hagaajinayso hababkaaga etching balaasmaha ama aad raadinayso qaybo waara oo ku jira RTP ama hababka faafinta, CVD bulk SiC waxay keentaa waxqabad aan la mid ahayn.
