Semicerawuu ku faraxsan yahay inuu bixiyoCassette PFA, doorasho qaali ah oo loogu talagalay maaraynta waferka ee deegaanka ay caabbinta kiimikaad iyo adkeysigu muhiim u yihiin. Waxaa laga sameeyay walxaha nadiifsan ee Perfluoroalkoxy (PFA), cajaladan waxaa loogu talagalay in ay u adkeysato xaaladaha ugu baahida badan ee soo saarista semiconductor, iyada oo hubinaysa badbaadada iyo daacadnimada weelashaada.
Iska caabbinta Kiimikada Aan LamidaynTheCassette PFAwaxaa loo qaabeeyey si ay u bixiso iska caabin heer sare ah oo kiimiko ah oo kala duwan, taas oo ka dhigaysa doorashada ugu fiican ee hababka ku lug leh asiidhka gardarrada, dareerayaasha, iyo kiimikooyinka kale ee adag. Caabbintan kiimikaad ee adagi waxay hubisaa in cajaladu ay ahaanayso mid sax ah oo shaqaynaysa xitaa meelaha ugu daxalka badan, si ay u kordhiso cimrigeeda oo ay yarayso baahida beddelka joogtada ah.
Dhisme Nadiif Sare lehSemicera'sCassette PFAwaxaa laga soo saaray walxo PFA aadka u saafi ah, taas oo muhiim u ah ka hortagga faddaraynta inta lagu jiro habaynta waferka. Dhismahan saafiga ah ee sarreeya waxa uu yareeyaa halista soo saarista walxaha iyo dheecaanka kiimikaad, iyada oo hubinaysa in maraqyadaada laga ilaaliyo wasakhyada wax u dhimi karta tayadooda.
Waarta iyo Waxqabadka La WanaajiyeyLoogu talagalay adkeysiga,Cassette PFAwaxay ilaalisaa daacadnimadeeda qaab-dhismeed heerkul aad u daran iyo xaalado habaysan oo adag. Haddi ay noqoto heer kul sare ama ha ahaato maarayn soo noqnoqota, cajaladani waxa ay sii haysaa qaabkeeda iyo waxqabadkeeda, iyada oo bixisa isku halaynta muddada dheer ee baahida deegaan wax soo saarka.
Injineerin sax ah oo loogu talagalay maaraynta suganTheSemicera PFA Cassettewaxay leedahay injineero sax ah oo hubiya maaraynta wafer ee sugan oo xasiloon. Afyare kasta waxaa si taxadar leh loogu talagalay in uu si ammaan ah meesha ugu hayo mareegaha, isaga oo ka hortagaya dhaq-dhaqaaq kasta ama isbeddelka keeni kara dhaawac. Injineernimada saxda ah waxay taageertaa meelayn wafer joogto ah oo sax ah, taasoo gacan ka geysata hufnaanta nidaamka guud.
Codsiga badan ee geedi socodka oo dhanWaad ku mahadsan tahay sifooyinka walxaha sare, eeCassette PFAwaa wax badan oo ku filan in loo isticmaalo marxaladaha kala duwan ee soo saarista semiconductor. Waxay si gaar ah ugu habboon tahay etching qoyan, kaydinta uumiga kiimikada (CVD), iyo hababka kale ee ku lug leh bay'ada kiimikada adag. La qabsigeedu waxa uu ka dhigayaa qalab lagama maarmaan u ah ilaalinta daacadnimada nidaamka iyo tayada waferka.
U heellanaanta tayada iyo hal-abuurkaSemicera, waxaa naga go'an inaan bixino alaabada buuxisa heerarka warshadaha ugu sarreeya. TheCassette PFAayaa tusaale u ah ballan-qaadkan, isaga oo bixinaya xal la isku halayn karo oo si aan kala go 'lahayn ugu dhex milmay geeddi-socodkaaga wax-soo-saarka. Cajalad kastaa waxa ay martaa xakamaynta tayada adag si loo hubiyo in ay buuxisay shuruudayada shaqo ee adag, taas oo keenaysa heerka sare ee aad ka filayso Semicera.
Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
Qiyaasta Crystal | |||
Noocyo badan | 4H | ||
Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
Halbeegyada Korontada | |||
Dopant | n-nooca Nitrogen | ||
iska caabin | 0.015-0.025ohm · cm | ||
Halbeegyada Makaanikada | |||
Dhexroorka | 150.0 ± 0.2mm | ||
Dhumucda | 350± 25 μm | ||
Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
Dabaqa labaad | Midna | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Qaab dhismeedka | |||
Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Wasakhda birta | ≤5E10atom/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Tayada hore | |||
Hore | Si | ||
Dhammaadka dusha sare | Si-wejiga CMP | ||
Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
Calaamadaynta laysarka hore | Midna | ||
Tayada dambe | |||
Dhammaadka dhabarka | C-waji CMP | ||
xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
Cidhif | |||
Cidhif | Chamfer | ||
Baakadaha | |||
Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. |