-
Habka Waxsoosaarka Semiconductor - Tignoolajiyada Etch
Boqolaal geeddi-socod ayaa loo baahan yahay si loo beddelo wafer-ga loo yaqaan semiconductor. Mid ka mid ah geeddi-socodka ugu muhiimsan waa etching - taas oo ah, ku dhejinta qaababka wareegga wanaagsan ee waferka. Guusha geeddi-socodku waxay ku xidhan tahay maaraynta doorsoomayaasha kala duwan ee xadka qaybinta go'an, iyo etching kasta...Sii akhri -
Qalab ku habboon oo loogu talagalay giraannada diiradda saaraya ee Qalabka Etching Plasma: Silicon Carbide (SiC)
Qalabka etching plasma, qaybaha dhoobada ayaa door muhiim ah ka ciyaara, oo ay ku jirto giraanta diiradda. Giraanta foojignaanta, ee la dhigo hareeraha waferka oo si toos ah loola xiriiro, ayaa lama huraan u ah diiradda saaraya balasmaha marawaxadda iyadoo la isticmaalayo korantada giraanta. Tani waxay kordhinaysaa un...Sii akhri -
Saamaynta silikoon carbide processing hal crystal on tayada dusha wafer
Aaladaha korantada ee Semiconductor waxay kujiraan booska udub-dhexaadka ah ee nidaamyada korantada korantada, gaar ahaan marka la eego horumarka degdega ah ee tignoolajiyada sida sirdoonka macmal, isgaarsiinta 5G iyo gawaarida tamarta cusub, shuruudaha waxqabadka iyaga ayaa ahaa ...Sii akhri -
Qalabka muhiimka ah ee kobaca SiC: Tantalum carbide daahan
Waqtigan xaadirka ah, jiilka saddexaad ee semiconductors waxaa xukuma silikoon carbide. Qaab dhismeedka qiimaha qalabkiisa, substrate-ku wuxuu xisaabiyaa 47%, iyo epitaxy xisaabaadka 23%. Labaduba waxay ku xisaabtamaan qiyaastii 70%, taas oo ah qaybta ugu muhiimsan ee qalabka silikoon carbide soosaarka ...Sii akhri -
Sidee bay alaabta dahaarka leh ee tantalum carbide kor ugu qaadaan caabbinta daxalka ee alaabta?
Dahaarka Tantalum carbide waa tignoolajiyada daawaynta dusha oo caadi ahaan loo isticmaalo taas oo si weyn u wanaajin karta iska caabinta daxalka ee alaabta. Daahan Tantalum carbide waxaa lagu dhejin karaa dusha sare ee substrate iyada oo loo marayo habab diyaarin oo kala duwan, sida kaydinta uumiga kiimikada, physica ...Sii akhri -
Shalay, Guddiga Hal-abuurka Sayniska iyo Tignoolajiyada ayaa soo saaray ogeysiis ah in Huazhuo Tignoolajiyada Saxda ah ay joojisay IPO!
Kaliya waxay ku dhawaaqday gaarsiinta qalabka ugu horreeya ee 8-inch SIC laser annealing ee Shiinaha, kaas oo sidoo kale ah tignoolajiyada Tsinghua; Maxay ula baxeen agabka laftooda? Kaliya dhawr eray: Marka hore, alaabadu aad bay u kala duwan yihiin! Jaleecada hore, ma garanayo waxay sameeyaan. Hadda, H...Sii akhri -
CVD silikon carbide daahan-2
Daahan CVD silicon carbide daahan 1. Waa maxay sababta daahan silicon carbide lakabka epitaxial lakabka epitaxial waa hal crystal khafiif ah filim gaar ah oo ku koray ku salaysan wafer iyada oo loo marayo habka epitaxial. Waferka substrate-ka iyo filimka khafiifka ah ee epitaxial waxaa si wada jir ah loogu yeeraa wafers epitaxial. Waxaana ka mid ahaa...Sii akhri -
Habka diyaarinta ee daahan SIC
Waqtigan xaadirka ah, hababka diyaarinta ee daahan SiC inta badan waxaa ka mid ah habka gel-sol, habka dhejinta, habka daahan burushka, habka buufin plasma, habka falcelinta uumiga kiimikada (CVR) iyo habka kaydinta uumiga kiimikada (CVD). Habka isku-xidhka Habkani waa nooc ka mid ah heerkul sare oo heer adag ah ...Sii akhri -
CVD Silicon Carbide Coating-1
Waa maxay CVD SiC Kiimiko dhigaalka uumiga ah (CVD) waa habka kaydinta faakuumka ee loo isticmaalo in lagu soo saaro walxo adag oo nadiif ah oo sarreeya. Habkan waxaa badanaa loo isticmaalaa goobta wax soo saarka semiconductor si loo sameeyo filimo khafiif ah oogada sare ee wafers. Habka diyaarinta SiC ee CVD, substrate-ku waa midSii akhri -
Falanqaynta qaab dhismeedka kala-baxa ee SiC crystal iyadoo la adeegsanayo jilidda raajo raadinta oo ay caawiso sawirka sare ee raajada
Asalkii cilmi baadhiseed muhiimada codsiga silikoon carbide (SiC): Maaddaama ay tahay maaddada semiconductor bandgap ballaaran, silikoon carbide waxa ay soo jiidatay dareen badan sababtoo ah sifooyinka korantada ee aadka u wanaagsan (sida bandgap weyn, xawaaraha korantada elektaroonigga sare iyo kuleylka kuleylka). Qalabkan...Sii akhri -
Habka diyaarinta abuurka crystal ee SiC kobaca crystal 3
Xaqiijinta KobacaKristaanka abuur silikoon carbide (SiC) ayaa la diyaariyey iyadoo la raacayo habka la qeexay waxaana lagu ansixiyay kobaca SiC crystal. Goobta kobaca ee loo adeegsaday waxay ahayd foornada koritaanka Induction ee iskeed u horumarsan oo leh heerkul korriin 2200 ℃, cadaadiska koritaanka 200 Pa, iyo koray ...Sii akhri -
Habka Diyaarinta Abuurka Crystal ee SiC Kobaca Hal Crystal ah (Qaybta 2)
2. Habka Tijaabada 2.1 Daawaynta Filimada Dheegga ah Waxaa la arkay in si toos ah loo abuurayo filim kaarboon ah ama ku xidhidh warqad graphite ah oo ku saabsan waferrada SiC ee lagu dahaadhay xabagta ayaa keentay dhowr arrimood: inuu saxiixo...Sii akhri