Silsiladda warshadaha semiconductor, gaar ahaan jiilka saddexaad ee semiconductor (wide bandgap semiconductor) silsilad warshadaha, waxaa jira substrates iyoepitaxiallakabyo. Waa maxay muhiimadda ay leedahayepitaxiallakabka? Waa maxay farqiga u dhexeeya substrate iyo substrate?
Substrate-ku waa awaferoo laga sameeyay walxo kiristaalo ah oo semiconductor ah. Substrate-ka ayaa si toos ah u gali karawaferisku xirka wax soo saarka si loo soo saaro qalabka semiconductor, ama waxaa lagu farsameyn karaaepitaxialhabka loo soo saaro wafers epitaxial. Substrate-ka ayaa ah meesha ugu hooseysawafer( gooyo maraqa, waxaad heli kartaa mid kale oo dhimanaya, ka dibna u xir si aad u noqoto jilibka halyeeyga ah) (xaqiiqda, gunta hoose ee jajabku guud ahaan waxaa lagu dhejiyaa lakabka dahabka dambe, oo loo isticmaalo isku xirka "dhulka", laakiin waxaa lagu sameeyaa habka dambe), iyo saldhigga xanbaarsan shaqada taageerada oo dhan (sare ee chip-ka ayaa lagu dhisay substrate).
Epitaxy waxa loola jeedaa geeddi-socodka lagu korinayo hal crystal cusub oo ku saabsan hal substrate crystal kaas oo si taxadir leh looga shaqeeyay jarida, shiidi, polishing, iwm (homoepitaxial ama heteroepitaxial).
Tan iyo markii lakabka crystal hal cusub ee la sameeyay koraan weheliyaan wajiga crystal substrate ah, waxa loo yaqaan lakabka epitaxial ah (sida caadiga ah dhowr microns qaro weyn. Qaado silicon tusaale ahaan: macnaha koritaanka epitaxial Silicon waa in ay koraan lakabka of crystal leh qaab dhismeedka wanaagsan ee sharafta. dusha sare ee silikoon hal crystal ah oo leh jihada crystal gaar ah iyo iska caabin kala duwan iyo dhumuc ahaan sida substrate-ka), substrate-ka leh lakabka epitaxial waxa loo yaqaan wafer epitaxial (epitaxial wafer = epitaxial layer + substrate). Qalabka wax soo saarka waxaa lagu fuliyaa lakabka epitaxial.
Epitaxiality waxa loo qaybiyaa homoepitaxiality iyo heteroepitaxality. Homoepitaxiality waa inay koraan lakabka epitaxial oo ah walxo la mid ah substrate-ka substrate-ka. Waa maxay muhiimada ay leedahay qaniisnimada? - Hagaajinta xasiloonida alaabta iyo isku halaynta. Inkasta oo homoepitaxiality ay tahay inay koraan lakabka epitaxial ee isku midka ah sida substrate-ka, inkastoo maaddadu ay isku mid tahay, waxay hagaajin kartaa nadiifnimada walxaha iyo isku-duubnaanta dusha sare ee wafer. Marka la barbar dhigo mareegaha la dhalaaliyay ee lagu farsameeyay polishing makaanik, substrate-ka lagu farsameeyay epitaxiality wuxuu leeyahay flatness dusha sare, nadaafad sare, cilladaha yar yar, iyo wasakh dusha ka yar. Sidaa darteed, iska caabintu waa isku mid, wayna fududahay in la xakameeyo cilladaha dusha sare sida qaybaha dusha sare, cilladaha isku dhejinta, iyo kala-baxa. Epitaxy kaliya ma wanaajiso waxqabadka alaabta, laakiin sidoo kale waxay hubisaa xasiloonida alaabta iyo isku halaynta.
Waa maxay faa'iidooyinka samaynta lakabka kale ee atomada silikoon epitaxial ee substrate wafer silikoon? Geedi socodka silikon ee CMOS, kobaca epitaxial (EPI, epitaxial) ee substrate-ka waferka waa tallaabo geedi socod aad muhiim u ah.
1. Hagaajinta tayada crystal
Cilladaha substrate-ka hore iyo wasakhda: Substrate-ka waferku waxa uu yeelan karaa cilado gaar ah iyo wasakh inta lagu jiro habka wax soo saarka. Kobaca lakabka epitaxial wuxuu dhalin karaa tayo sare leh, cillad hoose iyo wasakh-saarid hal-crystalline silicon lakabka substrate, taas oo aad muhiim ugu ah soo saarista qalabka xiga. Qaab dhismeedka kareemka lebbiska ah: Kobaca Epitaxial wuxuu hubin karaa qaab dhismeed isku mid ah, wuxuu yareeyaa saameynta xuduudaha hadhuudhka iyo cilladaha walxaha substrate-ka, oo sidaas darteed wanaajinta tayada kareemka ee canjeerada oo dhan.
2. Hagaajinta waxqabadka korantada
Hagaajinta sifooyinka qalabka: Adiga oo ku koraya lakabka epitaxial ee substrate-ka, xoojinta doping-ka iyo nooca silikon si sax ah ayaa loo xakameyn karaa si kor loogu qaado waxqabadka korantada ee qalabka. Tusaale ahaan, doping-ka lakabka epitaxial wuxuu si sax ah u hagaajin karaa korantada bilowga iyo xuduudaha kale ee korantada MOSFET. Iska yaree qulqulka hadda: Lakabyada epitaxial ee tayada sare leh waxay leeyihiin cufnaanta cilladda hoose, taas oo ka caawinaysa yaraynta dareeraha hadda ku jira aaladda, si kor loogu qaado waxqabadka iyo isku halaynta aaladda.
3. Taageer qanjidhada habsocodka horumarsan
Yaraynta cabbirka sifada: qanjidhada geeddi-socodka yar yar (sida 7nm, 5nm), cabbirka astaanta qalabku wuu sii yaraanayaa, isaga oo u baahan qalab badan oo la safeeyey oo tayo sare leh. Tiknoolajiyada kobaca Epitaxial waxay buuxin kartaa shuruudahan oo waxay taageertaa wax-qabadka sare iyo cufnaanta sare ee isku-dhafan ee wareegga wareegga. Hagaajinta korantada burburka: Lakabka epitaxial waxaa loo qaabeyn karaa inuu yeesho koronto burbursan oo sarreeya, taas oo muhiim u ah soo saarista aaladaha awoodda sare iyo kuwa korantada sare leh. Tusaale ahaan, aaladaha korantada, lakabka epitaxial wuxuu kordhin karaa korantada burburka ee aaladda wuxuuna kordhin karaa xadka badbaadada leh ee hawlgalka.
4. Habraaca ku habboonaanta iyo qaab-dhismeedka lakabyo badan
Qaab dhismeedka lakabka badan: Tignoolajiyada korriinka Epitaxial waxay u ogolaataa dhismooyin lakabyo badan in lagu beero substrate, lakabyo kala duwanna waxay yeelan karaan uruurin iyo noocyo kala duwan oo doping ah. Tani waxay aad u caawinaysaa soo saarista aaladaha CMOS ee kakan iyo gaaritaanka isdhexgalka saddex-geesoodka ah. Laqabsiga: Habka kobaca epitaxial wuxuu si aad ah ula jaan qaadayaa hababka wax soo saarka ee CMOS ee jira waxaana si fudud loogu dari karaa hababka wax soo saarka ee jira iyada oo aan si weyn wax looga beddelin khadadka habka.
Waqtiga boostada: Jul-16-2024