Habka diyaarinta wafer-ka, waxaa jira laba xiriiriye oo muhiim ah: mid waa diyaarinta substrate-ka, kan kalena waa hirgelinta habka epitaxial. Substrate-ka, wafer si taxadar leh looga sameeyay semiconductor hal walxo, ayaa si toos ah loogu dhejin karaa habka wax soo saarka waferka iyada oo saldhig u ah in la soo saaro qalabka semiconductor, ama waxaa lagu sii wanaajin karaa hababka epitaxial.
Haddaba, waa maxay tilmaamid? Marka la soo koobo, epitaxy waa korriinka lakabka cusub ee hal crystal oo ku yaal hal substrate crystal kaas oo si fiican loo farsameeyay (goyn, shiidi, dhalaalid, iwm.). Lakabkan cusub ee crystal-ka ah iyo substrate-ka ayaa laga samayn karaa shay isku mid ah ama walxo kala duwan, si kobaca isku midka ah ama heteroepitaxial loo gaaro marka loo baahdo. Sababtoo ah lakabka quraaradda ah ee dhawaan koray ayaa ballaarin doona iyadoo loo eegayo marxaladda crystal ee substrate-ka, waxaa loo yaqaannaa lakabka epitaxial. Dhumucdiisu guud ahaan waa dhowr micron oo keliya. Qaadashada silikoon tusaale ahaan, kobaca silikoon epitaxial waa in ay koraan lakabka silikoon oo leh jihada crystal la mid ah sida substrate-ka, iska caabin la xakameyn karo iyo dhumucdiisuna, on substrate silicon hal crystal substrate leh jihada crystal gaar ah. Lakab silikoon oo crystal ah oo leh qaab dhismeed qumman. Marka lakabka epitaxial uu ku koray substrate-ka, guud ahaan waxaa loo yaqaannaa wafer epitaxial.
Warshadaha semiconductor-ka caadiga ah ee silikoon, soo saarida soo noqnoqoshada sare iyo aaladaha awooda sare si toos ah waferrada silikoon waxay la kulmi doonaan dhibaatooyin farsamo. Tusaale ahaan, shuruudaha korantada burburka sarreeya, iska caabin yar oo taxane ah iyo hoos u dhaca korantada yar ee aagga ururiyaha ayaa adag in la gaaro. Soo bandhigida tignoolajiyada epitaxy waxay si caqli gal ah u xallisaa dhibaatooyinkan. Xalku waa in la kordho lakabka epitaxial-ka-caabbinta sare leh ee lakabka silikoon ee hooseeya, ka dibna ku dheji qalabka lakabka sare ee epitaxial. Sidan oo kale, lakabka sare ee epitaxial wuxuu bixiyaa danab burbursan oo sarreeya qalabka, halka substrate-ka hooseeya uu hoos u dhigo caabbinta substrate-ka, taas oo yareyneysa hoos u dhaca danabyada saturation, taas oo lagu gaaro koronto burbursan iyo dheelitir yar oo u dhexeeya caabbinta iyo hoos u dhac yar oo danab ah.
Intaa waxaa dheer, tignoolajiyada epitaxy sida wajiga uumiga epitaxy iyo dareeraha wajiga Epitaxy ee GaAs iyo kuwa kale III-V, II-VI iyo walxaha kale ee unugyadu semiconductor ayaa sidoo kale si weyn loo horumariyey oo waxay noqdeen saldhigga inta badan qalabka microwave, qalabka optoelectronic iyo awoodda. qalabka. Tiknoolajiyada geeddi-socodka lagama maarmaanka ah ee wax-soo-saarka, gaar ahaan codsiga guusha leh ee looxa molecular iyo tignoolajiyada uumiga birta-organic ee epitaxy ee lakabyada khafiifka ah, superlatices, ceelasha quantum, superlatices cidhiidhi ah, iyo lakabka khafiifka ah ee atomikada epitaxy waxay noqdeen beer cusub oo cilmi-baaris semiconductor ah. Horumarinta "Energy Belt Project" ayaa dhigay aasaas adag.
Ilaa hadda sida aaladaha jiilka seddexaad ee semiconductor, ku dhawaad dhammaan aaladaha semiconductor-ka waxaa lagu sameeyaa lakabka epitaxial, iyo wafer carbide silicon lafteedu waxay u adeegtaa oo keliya sida substrate-ka. Dhumucda walxaha SiC epitaxial, fiirsashada sidaha asalka ah iyo xuduudaha kale ayaa si toos ah u go'aamiya sifooyinka kala duwan ee korantada ee qalabka SiC. Aaladaha Silicon carbide ee loogu talagalay codsiyada korantada sare waxay soo bandhigtay shuruudo cusub oo loogu talagalay cabbirrada sida dhumucda walxaha epitaxial iyo diiradda sidaha asalka ah. Sidaa darteed, tignoolajiyada silikoon carbide epitaxial waxay door muhiim ah ka ciyaartaa si buuxda u adeegsiga waxqabadka aaladaha silikoon carbide. Diyaarinta ku dhawaad dhammaan aaladaha korantada ee SiC waxay ku saleysan tahay tayada sare ee waferrada SiC epitaxial. Soo saarista lakabyada epitaxial waa qayb muhiim ah oo ka mid ah warshadaha semiconductor bandgap ballaaran.
Waqtiga boostada: Meey-06-2024