Silicon nitride (Si₃N₄) dhoobada, sida dhoobada qaabdhismeedka horumarsan, waxay leeyihiin sifooyin aad u fiican sida iska caabin heerkul sare ah, xoog sare, adkeysi sare, qallafsanaan sare, iska caabin gurguurta, caabbinta oksaydhka, iyo xidhashada caabbinta. Intaa waxaa dheer, waxay bixiyaan iska caabin shoogga kulaylka wanaagsan, sifooyinka dielectric, conductivity kaamerada sare, iyo waxqabadka gudbinta hirarka korantada oo aad u sarreeya. Guryahaan dhameystiran ee aadka u wanaagsan ayaa ka dhigaya in si ballaaran loogu isticmaalo qeybaha dhisme ee adag, gaar ahaan hawada hawada iyo meelaha kale ee farsamada sare.
Si kastaba ha ahaatee, Si₃N₄, isagoo ah xarun leh bonds covalent xoog leh, waxay leedahay qaab dhismeed deggan ka dhigaya sintering in cufnaanta sare adag iyada oo loo marayo faafin-gobolka adag oo keliya. Si kor loogu qaado sintering, sintering aids, sida bir oxides (MgO, CaO, Al₂O₃) iyo Earth oxides dhif ah (Yb₂O₃, Y₂O₃, Lu₂O₃, CeO₂), ayaa lagu daray si ay u fududeeyaan cufnaanta iyada oo loo marayo habka dareeraha-wejiga sintering.
Waqtigan xaadirka ah, tignoolajiyada aaladda semiconductor-ka caalamiga ah waxay ku sii socotaa xagga danab sare, qulqulo waaweyn, iyo cufnaanta awoodeed ee weyn. Cilmi baaris lagu sameeyay hababka loo sameeyo si₃N₄ ceramics waa mid ballaaran. Maqaalkani waxa uu soo bandhigayaa hababka sintering kuwaas oo si wax ku ool ah u wanaajiya cufnaanta iyo sifooyinka farsamada dhamaystiran ee ceramics silicon nitride.
Hababka Sintering caadiga ah ee Si₃N₄ Ceramics
Isbarbardhigga Waxqabadka Si₃N₄ Ceramics oo ay diyaariyeen Habab Sintering oo kala duwan
1. Sintering Reactive (RS):Sintering reactive-ka ayaa ahaa habka ugu horreeya ee loo isticmaalo in warshad ahaan loogu diyaariyo Si₃N₄ ceramics. Waa sahlan, kharash-ool ah, oo awood u leh samaynta qaabab adag. Si kastaba ha ahaatee, waxay leedahay wareeg wax soo saar dheer, taas oo aan ku haboonayn wax soo saarka heerka warshadaha.
2. Sintering aan cadaadis lahayn (PLS):Tani waa habka ugu aasaasiga ah uguna fudud ee sintering. Si kastaba ha ahaatee, waxay u baahan tahay Si₃N₄ alaabta ceeriin oo tayo sare leh oo badiyaa waxay keentaa dhoobada cufnaanta hoose, hoos u dhac weyn, iyo u janjeera dildilaac ama qallafsanaan.
3. Cadaadiska Kulul Sintering (HP):Codsiga cadaadiska farsamada uniaxial wuxuu kordhiyaa awoodda wadista ee sintering, u ogolaanaya ceramics cufan in lagu soo saaro heerkul 100-200 ° C ka hooseeya kuwa loo isticmaalo sintering cadaadis la'aan. Habkan waxaa sida caadiga ah loo isticmaalaa soo saarista dhoobada sida block oo fudud laakiin way adagtahay in la buuxiyo dhumucda iyo shuruudaha qaabka alaabta substrate-ka.
4. Spark Plasma Sintering (SPS):SPS waxaa lagu gartaa sifeynta degdega ah, sifaynta hadhuudhka, iyo hoos u dhaca heerkulka hoos u dhaca. Si kastaba ha ahaatee, SPS waxay u baahan tahay maalgashi la taaban karo oo lagu sameeyo qalabka, iyo diyaarinta kulaylka sareeyo ee ceramics iyadoo la sii marayo SPS ayaa weli ku jirta marxaladda tijaabada oo aan weli la warshadayn.
5. Cadaadiska Gaaska (GPS):Adigoo isticmaalaya cadaadiska gaaska, habkani wuxuu joojinayaa kala-goynta dhoobada iyo dhimista miisaanka heerkulka sare. Way fududahay in la soo saaro dhoobada cufnaanta sare leh waxayna awood u siinaysaa wax soo saarka dufcada. Si kastaba ha ahaatee, geeddi-socod hal-tallaabo ah ee cadaadiska gaaska ayaa ku dhibtoonaya inuu soo saaro qaybo qaab-dhismeed leh midab gudaha iyo dibadda ah iyo qaab-dhismeedka. Isticmaalka laba-tallaabo ama geeddi-socod-kala-qaadis badan waxay si weyn u yareeyn kartaa nuxurka oksijiinta dhex-dhexaadka ah, hagaajinta kuleylka kuleylka, iyo kor u qaadida hantida guud.
Si kastaba ha ahaatee, heerkulka sare ee heerkulbeegga cadaadiska gaaska ee laba-tallaabo ayaa horseeday cilmi-baaris hore si ay diiradda u saaraan diyaarinta Si₃N₄ substrates dhoobada leh kulaylka sare iyo xoog foorarsiga heerkulka qolka. Cilmi-baadhis ku saabsan Si₃N₄ ceramics oo leh sifooyin farsamo oo dhammaystiran iyo sifada heerkulka sare waa mid xaddidan.
Habka laba-tilaabo ee cadaadiska Gaaska ee Si₃N₄
Yang Zhou iyo asxaabtiisa ka socota Jaamacadda Chongqing ee Tiknoolajiyada waxay isticmaaleen nidaamka gargaarka sintering ah oo ah 5 wt.% Yb₂O₃ + 5 wt.% Al₂O₃ si ay u diyaariyaan Si₃N₄ ceramics iyadoo la isticmaalayo hal-tallaabo iyo laba-tallaabo cadaadiska gaaska-cadaadiska ee 1800 ° C. Ceramics-ka Si₃N₄ ay soo saartay habka laba-tallaabo ee sintering ayaa lahaa cufnaanta sare iyo sifooyin farsamo oo dhammaystiran oo ka wanaagsan. Kuwa soo socdaa waxay soo koobayaan saamaynta hal-tallaabo iyo laba-tallaabo geeddi-socod cadaadis- cadaadis gaasta ah oo ku saabsan qaab-dhismeed-yar-yar iyo qalabka farsamada ee qaybaha dhoobada Si₃N₄.
Cufnaanta Habka cufnaanta ee Si₃N₄ sida caadiga ah waxay ku lug leedahay saddex marxaladood, oo leh isdhaafsi u dhexeeya marxaladaha. Marxaladda koowaad, dib-u-habaynta walxaha, iyo heerka labaad, kala-diridda- roobabka, ayaa ah marxaladaha ugu muhiimsan ee cufnaanta. Wakhtiga falcelinta ku filan ee marxaladahan waxay si weyn u wanaajisaa cufnaanta muunada. Marka heerkulka ka-hor-is-bar-dhigga ee habka sinterinta laba-tallaabo loo dejiyo 1600 ° C, badarka β-Si₃N₄ waxay sameeyaan qaab waxayna abuuraan dalool xiran. Ka dib markii hore loo sii daayay, kuleyl dheeri ah oo hoos yimaada heerkulka sare iyo cadaadiska nitrogen wuxuu kor u qaadaa socodka dareeraha-wejiga iyo buuxinta, kaas oo ka caawiya baabi'inta daloolada xiran, sii wanaajinta cufnaanta Si₃N₄ ceramics. Sidaa darteed, shaybaarrada ay soo saareen geeddi-socod laba-tallaabo ah ayaa muujinaya cufnaanta sare iyo cufnaanta qaraabada marka loo eego kuwa ay soo saartay hal-tallaabo sintering.
Marxaladda iyo qaab-dhismeed-yareedka Inta lagu jiro hal-tallaabo-dhex-dhexaadinta, wakhtiga la heli karo dib-u-habaynta walxaha iyo faafinta xadka hadhuudhka waa xaddidan tahay. Habka laba-tallaabo ee sintering, tallaabada ugu horreysa waxaa lagu qabtaa heerkulka hooseeya iyo cadaadiska gaaska hooseeya, taas oo kordhisa wakhtiga dib-u-habeynta walxaha waxayna keentaa miro waaweyn. Heerkulka ayaa markaa la kordhiyaa heerka kulaylka sare, halkaas oo miraha ay sii wadaan inay koraan iyada oo loo marayo habka bislaanshaha Ostwald, oo keenaya cufnaanta sare ee Si₃N₄ ceramics.
Guryaha Makaanikada Jilicsanaanta wejiga intergranular ee heerkulka sare waa sababta aasaasiga ah ee hoos u dhaca xoogga. In hal-tallaabo sintering, koritaanka miraha aan caadi ahayn waxay abuurtaa dalool yar oo u dhexeeya badarka, taas oo ka hortagaysa horumar la taaban karo ee xoogga heerkulka sare. Si kastaba ha ahaatee, habka laba-tallaabo ee sintering, marxaladda muraayadda, oo si isku mid ah loogu qaybiyay xuduudaha hadhuudhka, iyo miraha isku midka ah ayaa kor u qaadaya xoogga intergranular, taas oo keeneysa heerkul sare oo foorarsi ah.
Gebogebadii, haynta dheer inta lagu guda jiro hal-tallaabo sintering waxay si wax ku ool ah u yaraynaysaa porosity gudaha iyo gaadho midabka gudaha iyo qaab-dhismeedka la mid ah laakiin waxa laga yaabaa in ay u horseedi koritaanka hadhuudh aan caadi ahayn, kaas oo hoos u dhigaya sifooyinka farsamo qaarkood. Adigoo isticmaalaya habka laba-tallaabo ee sintering-adoo la adeegsanayo pre-sintering heerkul hoose si loo kordhiyo waqtiga dib u habeynta walxaha iyo haynta heerkulka sare si kor loogu qaado korriinka hadhuudhka-Si₃N₄ dhoobada leh cufnaanta qaraabada ah ee 98.25%, qaab-dhismeed isku mid ah, iyo sifooyin farsamo oo dhammaystiran oo heersare ah si guul leh ayaa loo diyaarin karaa.
| Magaca | Substrate | Halabuurka lakabka Epitaxial | Habka Epitaxial | Epitaxial dhexdhexaad ah |
| Silikon homoepitaxial | Si | Si | Wajiga uumiga Epitaxy (VPE) | SiCl4+H2 |
| Silicon heteroepitaxial | Sapphire ama lafdhabarta | Si | Wajiga uumiga Epitaxy (VPE) | SiH₄+H₂ |
| GaAs homoepitaxial | GAAs | GAAs GAAs | Wajiga uumiga Epitaxy (VPE) | AsCl₃+Ga+H₂ (Ar) |
| GAAs | GAAs GAAs | Molecular Beam Epitaxy (MBE) | Ga+As | |
| GaAs heteroepitaxial | GAAs GAAs | GaAlAs/GaAs/GaAlAs | Wajiga dareeraha ah ee Epitaxy (LPE) Wajiga uumiga (VPE) | Ga+Al+CaAs+ H2 Ga+AsH3+PH3+CHl+H2 |
| GaP homoepitaxial | GaP | GaP (GaP; N) | Wajiga dareeraha ah ee Epitaxy (LPE) Wajiga dareeraha ah ee Epitaxy (LPE) | Ga+GaP+H2+ (NH3) Ga+GaAs+GaP+NH3 |
| Superlatice | GAAs | GaAlAs/GaAs (wareeg) | Molecular Beam Epitaxy (MBE) MOCVD | Ca, As, Al GaR₃+AlR3+AsH3+H2 |
| InP homoepitaxial | InP | InP | Wajiga uumiga Epitaxy (VPE) Wajiga dareeraha ah ee Epitaxy (LPE) | PCl3+In+H2 Gudaha+InAs+GaAs+InP+H₂ |
| Si/GaAs Epitaxy | Si | GAAs | Molecular Beam Epitaxy (MBE) MOGVD | Ga, sida GaR₃+AshH₃+H₂ |
Waqtiga boostada: Dec-24-2024