Waa maxay koritaanka epitaxial?

Kobaca Epitaxial waa tignoolajiyad ku koraysa hal lakab oo crystal ah hal substrate crystal (substrate) oo leh jihada crystal la mid ah substrate-ka, sida hadii crystal-kii asalka ahaa uu dibada u baxay. Lakabkan cusub ee koray ee cusub wuxuu ka duwanaan karaa substrate-ka marka loo eego nooca conductivity, resistivity, iwm, wuxuuna kori karaa kiristaalo-lakab badan oo leh dhumucyo kala duwan iyo shuruudo kala duwan, sidaas darteed waxay si weyn u wanaajinaysaa dabacsanaanta naqshadaynta aaladda iyo waxqabadka aaladda. Intaa waxaa dheer, habka epitaxial ayaa sidoo kale si ballaaran loogu isticmaalaa tiknoolajiyada go'doominta ee PN ee wareegyada isku dhafan iyo hagaajinta tayada alaabta ee wareegyada isku dhafan ee ballaaran.

Kala soocida epitaxy waxay inta badan ku saleysan tahay isku dhafka kiimikada kala duwan ee lakabka substrate iyo epitaxial iyo hababka koritaanka kala duwan.

Marka loo eego ka kooban kiimikooyin kala duwan, koritaanka epitaxial waxaa loo qaybin karaa laba nooc:

1. Homoepitaxial:

Xaaladdan oo kale, lakabka epitaxial wuxuu leeyahay kiimiko isku mid ah sida substrate-ka. Tusaale ahaan, lakabyada silikoon epitaxial waxay si toos ah ugu koraan substrates silikoon.

2. Heteroepitaxy:

Halkan, isku dhafka kiimikada ee lakabka epitaxial wuu ka duwan yahay kan substrate-ka. Tusaale ahaan, lakabka gallium nitride epitaxial wuxuu ku koray substrate sapphire ah.

Marka loo eego hababka koritaanka kala duwan, tignoolajiyada koritaanka epitaxial ayaa sidoo kale loo qaybin karaa noocyo kala duwan:

1. Molecular beam epitaxy (MBE):

Tani waa tignoolajiyada loogu talagalay kobcinta aflaanta khafiifka ah ee kareemka ah ee hal lakab oo crystals ah, kaas oo lagu gaaro iyada oo si sax ah loo xakameynayo heerka socodka iftiinka molecular iyo cufnaanta iftiinka ee faakuum ultra-sare ah.

2. Dhigista uumiga kiimikada ee birta-organic (MOCVD):

Farsamadani waxay isticmaashaa iskudhisyada birta-organic iyo reagents-wejiga gaaska si ay u sameeyaan fal-celin kiimikaad heerkul sare si ay u dhaliyaan agabka filimada khafiifka ah ee loo baahan yahay. Waxay leedahay codsiyada ballaaran ee diyaarinta qalabka semiconductor-ka isku dhafan iyo qalabka.

3. Wajiga dareeraha ah ee epitaxy (LPE):

Marka lagu daro walxo dareere ah hal substrate crystal iyo samaynta daawaynta kulaylka heerkul gaar ah, walxaha dareeraha ah ayaa soo kicinaya si ay u sameeyaan hal filim. Filimada ay diyaarisay tignoolajiyadaani waa lattice-ku dhigma substrate-ka waxaana inta badan loo isticmaalaa in lagu diyaariyo qalabka semiconductor-ka isku dhafan.

4. Wajiga uumiga epitaxy (VPE):

Wuxuu adeegsadaa fal-celiyeyaasha gaaska si uu u sameeyo fal-celin kiimikaad heerkul sare si uu u dhaliyo agabka fiilooyinka khafiifka ah ee loo baahan yahay. Tiknoolajiyadani waxay ku habboon tahay diyaarinta aag ballaaran, filimo crystal ah oo tayo sare leh, waxayna si gaar ah ugu fiican tahay diyaarinta qalabka iyo qalabka semiconductor-ka isku dhafan.

5. Kiimikada epitaxy beam (CBE):

Tignoolajiyadani waxay isticmaashaa alwaaxyada kiimikaad si ay ugu koraan hal filim oo crystal ah oo ku yaal substrates-ka crystal, kaas oo lagu gaaro iyada oo si sax ah loo xakameeyo heerka socodka iftiinka kiimikada iyo cufnaanta iftiinka. Waxay leedahay codsiyo ballaaran oo loogu talagalay diyaarinta filimo khafiif ah oo hal crystal ah oo tayo sare leh.

6. epitaxy lakabka atomiga (ALE):

Isticmaalka tignoolajiyada dhigaalka lakabka atomiga, agabka filimaanta khafiifka ah ee loo baahan yahay ayaa lakab ahaan loogu shubaa hal substrate crystal ah. Farsamadan waxay diyaarin kartaa aag ballaaran, filimo crystals ah oo tayo sare leh waxaana badanaa loo isticmaalaa in lagu diyaariyo qalabka iyo qalabka semiconductor.

7. Darbiga kulul ee epitaxy (HWE):

Iyada oo loo marayo kulaylka heerkulka sare, falceliyeyaasha gaaska ayaa lagu shubaa hal substrate crystal si ay u sameeyaan hal filim oo crystal ah. Tiknoolajiyadani waxay sidoo kale ku habboon tahay diyaarinta aag ballaaran, filimo crystal ah oo tayo sare leh, waxaana si gaar ah loo isticmaalaa diyaarinta qalabka iyo qalabka semiconductor-ka isku dhafan.