Kobaca Epitaxial waa tignoolajiyad ku koraysa hal lakab oo crystal ah hal substrate crystal (substrate) oo leh jihada crystal la mid ah substrate-ka, sida hadii crystal-kii asalka ahaa uu dibada u baxay. Lakabkan cusub ee koray ee cusub wuxuu ka duwanaan karaa substrate-ka marka loo eego nooca conductivity, resistivity, iwm, wuxuuna kori karaa kiristaalo-lakab badan oo leh dhumucyo kala duwan iyo shuruudo kala duwan, sidaas darteed waxay si weyn u wanaajinaysaa dabacsanaanta naqshadaynta aaladda iyo waxqabadka aaladda. Intaa waxaa dheer, habka epitaxial ayaa sidoo kale si ballaaran loogu isticmaalaa tiknoolajiyada go'doominta ee PN ee wareegyada isku dhafan iyo hagaajinta tayada alaabta ee wareegyada isku dhafan ee ballaaran.
Kala soocida epitaxy waxay inta badan ku saleysan tahay isku dhafka kiimikada kala duwan ee lakabka substrate iyo epitaxial iyo hababka koritaanka kala duwan.
Marka loo eego ka kooban kiimikooyin kala duwan, koritaanka epitaxial waxaa loo qaybin karaa laba nooc:
1. Homoepitaxial: Xaaladdan oo kale, lakabka epitaxial wuxuu leeyahay kiimiko isku mid ah sida substrate-ka. Tusaale ahaan, lakabyada silikoon epitaxial waxay si toos ah ugu koraan substrates silikoon.
2. Heteroepitaxy: Halkan, ka kooban kiimikaad ee lakabka epitaxial waa ka duwan yahay kan substrate-ka. Tusaale ahaan, lakabka gallium nitride epitaxial wuxuu ku koray substrate sapphire ah.
Marka loo eego hababka koritaanka kala duwan, tignoolajiyada koritaanka epitaxial ayaa sidoo kale loo qaybin karaa noocyo kala duwan:
1. Molecular beam epitaxy (MBE): Tani waa tignoolajiyada soo koraya hal filim oo khafiif ah oo kristal ah oo ku jira halbeegyo crystals ah, kaas oo lagu gaadho in si sax ah loo xakameeyo heerka socodka iftiinka molecular iyo cufnaanta beam ee vacuum ultra-sare.
2. Bir-organic kiimikaad kaydinta uumiga kiimikada (MOCVD): Farsamadani waxay isticmaashaa xeryahooda birta-organic iyo reagents-gaas-wejiga si ay u sameeyaan fal-celin kiimikaad heerkul sare si ay u dhaliyaan agabka fiilooyinka khafiifka ah ee loo baahan yahay. Waxay leedahay codsiyada ballaaran ee diyaarinta qalabka semiconductor-ka isku dhafan iyo qalabka.
3. Wajiga dareeraha ah ee epitaxy (LPE): Marka lagu daro walxo dareere ah hal substrate crystal iyo samaynta daaweynta kulaylka heerkul gaar ah, walxaha dareeraha ah ayaa crystallizes si ay u sameeyaan hal filim oo crystal ah. Filimada ay diyaarisay tignoolajiyadaani waa lattice-ku dhigma substrate-ka waxaana inta badan loo isticmaalaa in lagu diyaariyo qalabka semiconductor-ka isku dhafan.
4. Wajiga uumiga epitaxy (VPE): Waxay isticmaashaa fal-celiyeyaasha gaaska si ay u sameeyaan fal-celin kiimikaad heerkul sare si ay u dhaliyaan agabka fiilooyinka khafiifka ah ee loo baahan yahay. Tiknoolajiyadani waxay ku habboon tahay diyaarinta aag ballaaran, filimo crystal ah oo tayo sare leh, waxayna si gaar ah ugu fiican tahay diyaarinta qalabka iyo qalabka semiconductor-ka isku dhafan.
5. Kiimikada beam epitaxy (CBE): Farsamadan waxay isticmaashaa alwaax kiimikaad ah si ay ugu koraan hal filim oo crystal ah oo ku yaala halbeegyo crystals ah, taas oo lagu gaaro iyada oo si sax ah loo xakameynayo qulqulka qulqulka kiimikada iyo cufnaanta beam. Waxay leedahay codsiyo ballaaran oo diyaarinta filimo khafiif ah oo hal crystal ah oo tayo sare leh.
6. Atomic Layer epitaxy (ALE): Isticmaalka tignoolajiyada dhigista lakabka atomiga, agabka fiilada khafiifka ah ee loo baahan yahay waxaa lagu kaydiyaa lakab iyadoo la saarayo hal substrate crystal ah. Farsamadan waxay diyaarin kartaa aag ballaaran, filimo crystals ah oo tayo sare leh waxaana badanaa loo isticmaalaa in lagu diyaariyo qalabka iyo qalabka semiconductor.
7. Hot wall epitaxy (HWE): Iyada oo kulaylka heerkulka sare, reactant gaseous waxaa lagu shubaa hal substrate crystal si ay u sameeyaan hal filim crystal. Tiknoolajiyadani waxay sidoo kale ku habboon tahay diyaarinta aag ballaaran, filimo crystal ah oo tayo sare leh, waxaana si gaar ah loo isticmaalaa diyaarinta qalabka semiconductor-ka isku dhafan.
Waqtiga boostada: Meey-06-2024