Taariikhda Carbide Silicon iyo Codsiga Dahaarka Silikon Carbide

Horumarinta iyo Codsiyada Silicon Carbide (SiC)

1. Qarni curis ah oo SiC ah
Safarka silikoon carbide (SiC) wuxuu bilaabmay 1893, markii Edward Goodrich Acheson uu naqshadeeyay foornada Acheson, isagoo isticmaalaya agab kaarboon si loo gaaro wax soo saarka warshadaha ee SiC iyada oo loo marayo kuleylka korantada ee quartz iyo carbon. Hal-abuurkani waxa uu calaamadeeyay bilowga warshadaynta SiC waxana uu Acheson kasbaday shati.

Horraantii qarnigii 20-aad, SiC waxa markii hore loo isticmaalay sidii wax-is-daba-marin ah oo ay ugu wacan tahay adayggeeda cajiibka ah iyo xidhashada caabbinta. Badhtamihii qarnigii 20aad, horumarka tignoolajiyada kaydinta uumiga kiimikada (CVD) ayaa furay fursado cusub. Cilmi-baarayaasha Bell Labs, oo uu hoggaamiyo Rustum Roy, ayaa aasaaska u dhigay CVD SiC, iyaga oo ku guuleystey dahaarka ugu horreeya ee SiC ee sagxadaha garaafka.

1970naadkii waxa la arkay horumar wayn markii Ururka Carbide Corporation ay codsatay garaafyada SiC-dahaarka leh ee kobaca epitaxial ee gallium nitride (GaN) qalabka semiconductor. Horumarkan ayaa door muhiim ah ka ciyaartay LED-yada ku saleysan GaN ee waxqabadka sare leh. Tobannaankii sano ee la soo dhaafay, dahaarka SiC ayaa ku balaadhay wixii ka baxsan semiconductors ilaa codsiyada hawada, baabuurta, iyo korontada, taas oo ay ugu wacan tahay horumarinta farsamooyinka wax soo saarka.

Maanta, hal-abuurka sida buufinta kulaylka, PVD, iyo nanotechnology ayaa sii wanaajinaya waxqabadka iyo adeegsiga dahaarka SiC, oo muujinaya awooddeeda dhinacyada goynta.

2. Fahamka Qaababka iyo Isticmaalka SiC's Crystal
SiC waxa ay ku faantaa in ka badan 200 oo nooc oo kala duwan, oo ay u kala qaybisay habayntooda atomiga oo loo kala saaray qaab-dhismeedka cubic (3C), laba geesood (H), iyo qaab dhismeedka rhombohedral (R). Kuwaas waxaa ka mid ah, 4H-SiC iyo 6H-SiC ayaa si weyn loogu isticmaalaa awoodda sare iyo aaladaha optoelectronic, siday u kala horreeyaan, halka β-SiC lagu qiimeeyay heerkulka sare ee kuleylka, xirashada caabbinta, iyo iska caabinta daxalka.

β-SiCguryaha gaarka ah, sida kulaylka conductivity ka mid ah120-200 W/m·Kiyo isku xidhka balaadhinta kulaylka ee garaafka si dhow u dhigma, ka dhig walxaha la doorbido ee dahaarka dusha sare ee qalabka epitaxy wafer.

3. Dahaarka SiC: Guryaha iyo Farsamooyinka Diyaarinta
Dahaarka SiC, sida caadiga ah β-SiC, ayaa si ballaaran loo codsadaa si kor loogu qaado sifooyinka dusha sare sida qallafsanaanta, xirashada caabbinta, iyo xasilloonida kulaylka. Hababka caadiga ah ee diyaarinta waxaa ka mid ah:

• Dhigista Uumiga Kiimikada (CVD):Waxay bixisaa dahaar tayo sare leh oo leh dhejis heer sare ah iyo isku mid ah, oo ku habboon substrates waaweyn oo adag.
• Dhigista Uumiga Jireed (PVD):Waxay bixisaa kontorool sax ah oo ku saabsan halabuurka daahan, oo ku habboon codsiyada saxda ah ee saxda ah.
• Farsamooyinka buufinta, Dhigista Kiimikada Electrochemical, iyo Dahaarka Qulqulka: U adeega sida beddelka kharash-ool ah ee codsiyada gaarka ah, in kasta oo leh xaddidaadyo kala duwan oo ku dheggan iyo labbiska.

Hab kasta waxaa lagu doortaa iyadoo lagu salaynayo sifooyinka substrate-ka iyo shuruudaha codsiga.

4. SiC-Coated Susceptors Graphite Susceptors gudaha MOCVD
SiC-dahaarka garaafyada garaafyada ayaa lagama maarmaan u ah Dhigista Uumiga Kiimikada Dabiiciga ah ee Birta (MOCVD), oo ah geeddi-socod furaha u ah wax-soo-saarka wax-soo-saarka ee optoelectronic.

Dabaylahani waxay bixiyaan taageero adag korriinka filimka epitaxial, hubinta xasilloonida kulaylka iyo yaraynta wasakhda wasakhda ah. Dahaarka SiC ayaa sidoo kale kor u qaadaya iska caabbinta oksaydhka, guryaha dusha sare, iyo tayada interface, taas oo awood u siinaysa xakamaynta saxda ah inta lagu jiro koritaanka filimka.

5. U Socodka Mustaqbalka
Sanadihii la soo dhaafay, dadaallo muhiim ah ayaa lagu jiheeyay hagaajinta hababka wax soo saarka ee substrates garaafyada-dahaarka leh ee SiC. Cilmi-baarayaashu waxay diiradda saarayaan kor u qaadista nadiifnimada, lebbiska, iyo cimriga iyadoo la dhimayo kharashyada. Intaa waxaa dheer, sahaminta agabka cusub sidadahaarka tantalum carbide (TaC).waxay bixisaa horumar suurtagal ah oo ku saabsan dhaqdhaqaaqa kulaylka iyo iska caabinta daxalka, taasoo u gogol xaareysa xalalka jiilka soo socda.

Maaddaama baahida loo qabo Susceptors garaafyada-dahaarka ah ee SiC ay sii socoto inay koraan, horumarka wax-soo-saarka caqliga leh iyo wax-soo-saarka-warshadaha ayaa sii taageeri doona horumarinta alaabada tayada sare leh si loo daboolo baahiyaha kobcaya ee warshadaha semiconductor iyo optoelectronics.