Habka diyaarinta daahan carbide silicon

Waqtigan xaadirka ah, hababka diyaarinta eeDahaarka SiCInta badan waxaa ka mid ah habka gel-sol, habka dhejinta, habka daahan burushka, habka buufinta balaasmaha, habka falcelinta gaaska kiimikada (CVR) iyo habka kaydinta uumiga kiimikada (CVD).

Dahaarka Silicon Carbide (12) (1)

Habka isku-xidhka:

Habka waa nooc ka mid ah heerkul sare oo heerkulkiisu sarreeyo sintering weji adag, kaas oo inta badan isticmaala isku dhafka ah budada Si iyo budada C sida budada gundhigga ah, matrix graphite waxaa la dhigayaa in budada gundhig, iyo sintering heerkulka sare waxaa lagu fuliyaa gaaska inert. , iyo ugu dambeyntiiDahaarka SiCwaxaa laga helaa dusha sare ee matrix graphite. Nidaamku waa mid fudud oo isku-dhafka u dhexeeya daaha iyo substrate-ka waa mid wanaagsan, laakiin isku-dhafka lakabka ee jihada dhumucda waa mid liidata, taas oo sahlan in la soo saaro godad badan oo keena caabbinta oksaydhka liidata.

 

Habka daahan caday:

Habka dahaarka buraashka ayaa inta badan ah in la cadaydo walxaha dareeraha ah ee dareeraha ah ee dusha sare ee shaxanka garaafka, ka dibna lagu daaweeyo alaabta ceeriin heerkul gaar ah si loogu diyaariyo daahan. Nidaamku waa mid fudud, kharashkuna waa yar yahay, laakiin dahaarka lagu diyaariyo habka burushka buraashka ayaa daciif ah marka lagu daro substrate-ka, lebbiska dahaarka ayaa liita, dahaarka waa dhuuban oo iska caabbinta oksaydhisku waa yar yahay, iyo habab kale ayaa loo baahan yahay si loo caawiyo waa.

 

Habka buufinta balaasmaha:

Habka buufinta balaasmaha badiyaa waa in lagu buufiyo alaabta ceeriin ee dhalaalaysa ama badh-dhalan ah oo ku taal dusha sare ee matrix garaafka iyada oo la adeegsanayo qori balasma ah, ka dibna la adkeeyo oo lagu xidho si loo sameeyo dahaar. Habka waa sahlan tahay in la shaqeeyo oo diyaarin kara daahan silikoon carbide cufan oo cufan, laakiin daahan silikoon carbide diyaarisay habka inta badan waa mid aad u daciif ah oo keenaya in iska caabin oksaydh daciif ah, sidaas darteed waxa guud ahaan loo isticmaalaa diyaarinta ah ee daahan SiC ka kooban si loo hagaajiyo. tayada dahaarka.

 

Habka Gel-sol:

Habka gel-sol inta badan waa in la diyaariyo lebis iyo xal hufan oo daboolaya dusha sare ee matrixka, oo lagu qallajinayo jel ka dibna la miirayo si loo helo dahaarka. Habkani waa mid sahlan in la shaqeeyo oo qiimo jaban, laakiin daahan la soo saaray ayaa leh cilladaha qaarkood sida caabbinta shoogga kulaylka hooseeya iyo dildilaaca fudud, sidaas darteed si ballaaran looma isticmaali karo.

 

Falcelinta Gaaska Kiimikada (CVR):

CVR inta badan waxa ay dhalisaaDahaarka SiCadoo isticmaalaya Si iyo budada SiO2 si loo dhaliyo uumiga SiO heerkul sare, iyo falcelin kiimiko oo taxane ah ayaa ka dhaca dusha sare ee walxaha C. TheDahaarka SiCloo diyaariyey habkan ayaa si dhow ugu xidhan substrate-ka, laakiin heerkulka falcelinta ayaa ka sarreeya, kharashkuna wuu sarreeyaa.

 

Dhigista Uumiga Kiimikada (CVD):

Waqtigan xaadirka ah, CVD waa tignoolajiyada ugu weyn ee diyaarintaDahaarka SiCdusha sare ee substrate. Habka ugu muhiimsan waa falcelin jidheed iyo kiimiko oo taxane ah oo ka mid ah walxaha falcelinta gaaska ee dusha sare ee substrate, iyo ugu dambeyntii daaha SiC waxaa lagu diyaariyaa meelaynta dusha sare ee substrate. Dahaarka SiC ee ay diyaarisay tignoolajiyada CVD waxay si dhow ugu xidhan tahay dusha sare ee substrate-ka, kaas oo si wax ku ool ah u wanaajin kara iska caabbinta oksaydhka iyo iska caabbinta walxaha substrate-ka, laakiin wakhtiga kaydinta habkani waa dheer yahay, gaaska falcelinta ayaa leh sun gaar ah. gaas

 

Waqtiga boostada: Nov-06-2023