Guryaha semiconductor dhoobada

Astaamaha:

Iska caabbinta ceramics ee leh guryaha semiconductor waxay ku saabsan tahay 10-5 ~ 107ω.cm, iyo sifooyinka semiconductor ee alaabta dhoobada waxaa lagu heli karaa doping ama sababa cilladaha lattice ee ay keento leexashada stoichiometric. Ceramics isticmaalaya habkan waxaa ka mid ah TiO2,

ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 iyo SiC. Astaamaha kala duwan eeceramics semiconductorwaa in korantada korantada ay isku beddesho deegaanka, taas oo loo isticmaali karo in lagu sameeyo noocyada kala duwan ee aaladaha xasaasiga ah ee dhoobada.

Sida kuleylka xasaasiga ah, xasaasiga gaaska, xasaasiga qoyaanka, cadaadiska xasaasiga ah, xasaasiga iftiinka iyo dareemayaasha kale. Qalabka laf-dhabarka ee Semiconductor, sida Fe3O4, ayaa lagu qasi karaa alaabada laf-dhabarka ee aan-conductor, sida MgAl2O4, ee xalalka adag ee la xakameeyey.

MgCr2O4, iyo Zr2TiO4, ayaa loo isticmaali karaa sidii kuleyliyeyaasha, kuwaas oo si taxadar leh loo xakameeyo aaladaha iska caabbinta kuwaas oo ku kala duwan heerkulka. ZnO waxa lagu beddeli karaa iyadoo lagu daro oksaydhyada sida Bi, Mn, Co iyo Cr.

Inta badan oksaydhyadan si adag looguma milma ZnO, laakiin leexinta xadka hadhuudhka si ay u sameeyaan lakabka xannibaadda, si loo helo ZnO varistor agabyada dhoobada, waana nooc ka mid ah walxaha leh waxqabadka ugu fiican ee ceramics varistor.

SiC doping (sida dadka kaarboon madow, budada garaafka) ayaa diyaarin karaqalabka semiconductoroo leh xasillooni heerkul sarreeya, oo loo isticmaalo sida walxaha kululaynta iska caabinta kala duwan, taas oo ah, ulaha kaarboonka silikoon ee foornooyinka korantada ee heerkulka sare. Xakamee iska caabbinta iyo isdhaafka qaybta SiC si aad u gaadho ku dhawaad ​​wax kasta oo la rabo

Xaaladaha hawlgalka (ilaa 1500 ° C), kordhinta iska caabbinta iyo yaraynta qaybta iskutallaabta ee walxaha kuleyliyaha waxay kordhin doontaa kulaylka dhaliya. Usha kaarboonka ee hawada ku jirta waxay ku dhici doontaa falcelinta oksaydhka, isticmaalka heerkulka guud ahaan wuxuu ku xaddidan yahay 1600 ° C ka hooseeya, nooca caadiga ah ee usha kaarboonka silikoon

Heerkulka shaqada ee badbaadsan waa 1350°C. SiC, atom-ka Si waxaa lagu beddelay N atom, sababtoo ah N wuxuu leeyahay elektaroono badan, waxaa jira elektaroonno xad-dhaaf ah, heerka tamartiisuna waxay ku dhowdahay qaybta hoose ee conduction-ka wayna fududahay in kor loogu qaado band conduction, markaa xaaladdan tamarta Waxa kale oo loo yaqaan heerka deeq-bixiyayaasha, badhtan

Daareeyayaashu waa semiconductors nooca N ama si elektaroonig ah semiconductors. Haddii al atom loo isticmaalo SiC si loogu beddelo atomka Si, sababtoo ah la'aanta elektarooniga, tamarta walxaha la sameeyay waxay ku dhowdahay qaybta elektarooniga ah ee kor ku xusan, way fududahay in la aqbalo electrons, sidaas darteed waxaa loo yaqaannaa aqbalid.

Heerka tamarta ugu weyn, kaas oo ka tagaya boos banaan ee band valence taas oo laga yaabo in ay qabtaan electrons sababta oo ah booska banaan u dhaqmo la mid ah sidaha dallaca wanaagsan, waxaa loo yaqaan P-nooca semiconductor ama dalool semiconductor (H. Sarman,1989).