Adeegga Nolosha Dheer ee SiC Dahaarka Sawir Qaadaha ee Waferka Qorraxda

Adeega Nolosha Dheer ee SiC Dahaarka Sawir Qaadaha ee Waferka Qorraxda Sawirka

Sharaxaad Gaaban:

Silicon carbide waa nooc cusub oo ceramics ah oo leh waxqabad qiimo sare leh iyo sifooyin wanagsan. Sababo la xiriira astaamaha sida xoogga sare iyo adayga, iska caabin heerkul sare ah, kulaylka kuleylka weyn iyo iska caabbinta daxalka kiimikada awgeed, Silicon Carbide waxay u adkeysan kartaa dhammaan dhexdhexaadinta kiimikada. Sidaa darteed, SiC waxaa si weyn loogu isticmaalaa macdanta saliidda, kiimikooyinka, mishiinada iyo hawada hawada, xitaa tamarta nukliyeerka iyo milatarigu waxay leeyihiin baahidooda gaarka ah ee SIC. Qaar ka mid ah codsiyada caadiga ah ee aan bixin karno waxaa ka mid ah giraangiraha daboolka ee bamka, waalka iyo hubka difaaca iwm.

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Faa'iidooyinka

Iska caabbinta oksaydhka heerkulka sare
Iska caabin daxalka oo heersare ah
Iska caabbinta abrasion wanaagsan
Isku-xidhka sare ee dhaqdhaqaaqa kulaylka
Nafta dufanka, cufnaanta hoose
adkaanta sare
Naqshad la habeeyey.

Codsiyada

-Goob u adkaysta: baadiyaha, saxan, biibiile ciid, dahaarka duufaanka, foosto shiidi, iwm.
Goobta Heerkulka Sare: SiC Slab, Quenching Furnace Tube, Tube Radiant, Crucible, Cunsurka Kuleyliyaha, Roller, Beam, Heat Beddelka, Dhuumaha Hawada Qabow, Nozzle Gubida, Tuubada Ilaalinta Heerarka, SiC Doonta, Qaabdhismeedka Gaariga, Setter, iwm.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck, sic paddle, sic caseette, sic tube diffusion, fargeeto wafer, saxan nuugid, hage, iwm.
-Silicon Carbide Seal Field: dhammaan noocyada giraanta shaabadda, sida, baadiyaha, iwm.
Goobta Sawirka: Cantilever Paddle, Foosto wax shiida, Roller Silicon Carbide, iwm.
- Goobta baytariyada Lithium

WAFER (1)

WAFER (2)

Tilmaamaha Jirka ee SiC

Hanti	Qiimaha	Habka
Cufnaanta	3.21 g/cc	Quus-sabeen iyo cabbir
Kuleyl gaar ah	0.66 J/g °K	Fiishka laysarka la garaaco
Xoog dabacsanaan	450 MPa560 MPa	4-dhibcood laablaab, 1300 °
adkaanta jabka	2.94 MPa m1/2	Microindentation
Adag	2800	Vicker's, 500 g oo culeys ah
Modulus Elastic ModulusYoung's Modulus	450 GPa430 GPA	4 pt qaloocsan, RT4 pt laab, 1300 °C
Cabbirka hadhuudhka	2 - 10 µm	SEM

Guryaha kulaylka ee SiC

Habdhaqanka kulaylka	250 W/m °K	Habka Flash Laser, RT
Balaadhinta kulaylka (CTE)	4.5 x 10-6 °K	Heerkulka qolka ilaa 950C, silica dilatometer

Qiyaasaha Farsamada

Shayga	Unug	Xogta
Shayga	Unug	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
Nuxurka SiC	%	85	75	99	99.9	≥99
Waxa ku jira silikoon bilaash ah	%	15	0	0	0	0
Heerkulka adeegga ugu sarreeya	℃	1380	1450	1650	1620	1400
Cufnaanta	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Bannaanka furan	%	0	13-15	0	15-18	7-8
Xoog laabashada 20℃	Мpa	250	160	380	100	/
Xoog laabashada 1200 ℃	Мpa	280	180	400	120	/
Modulus of elasticity 20℃	Gpa	330	580	420	240	/
Modulus of elasticity 1200 ℃	Gpa	300	/	/	200	/
Heerarka kulaylka 1200 ℃	W/mK	45	19.6	100-120	36.6	/
Isku-dhafka ballaarinta kulaylka	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

Daahan CVD silicon carbide ee dusha sare ee alaabta dhoobada silikoon carbide recrystallized waxay gaari kartaa nadiif ah in ka badan 99.9999% si loo daboolo baahiyaha macaamiisha ee warshadaha semiconductor.